Nonlinear Transistor Model Parameter Extraction Techniques

by Edited by Matthias Rudolph , Christian Fager , David E. Root

• ISBN13: 9780521762106
• ISBN10: 0521762103
• Format: Hardcover
• Copyright: 2011-12-05
• Publisher: Cambridge University Press

Summary

Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.

Table of Contents

Introduction

DC and thermal modeling: III-V FETs and HBTs

Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling

Uncertainties in small-signal equivalent circuit modeling

The large-signal model: theoretical foundations, practical considerations, and recent trends

Large and packaged transistors

Characterization and modeling of dispersive effects

Optimizing microwave measurements for model construction and validation

Practical statistical simulation for efficient circuit design

Noise modeling

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