Nonvolatile Memory Technologies with Emphasis on Flash A Comprehensive Guide to Understanding and Using Flash Memory Devices

by Brewer, Joe; Gill, Manzur

• ISBN13: 9780471770022
• ISBN10: 0471770027
• Edition: 1st
• Format: Hardcover
• Copyright: 2008-01-09
• Publisher: Wiley-IEEE Press

Summary

The authoritative reference guide for nonvolatile memory users Presented here is an all-inclusive treatment of Flash technology, includingFlash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. Comprised of thirteen succinct chapters authored by pioneers in the field, this book begins with a brief tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it builds upon this foundation to cover all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications. Nonvolatile Memory Technologies with Emphasis on Flash seamlessly gathers together information on the complex group of technologies that make up nonvolatile memory into one well-organized book. While providing a detailed view of state-of-the-art mainline technologies that are currently being produced in high volume, it also explores less-exposed and alternate technologies that may emerge in the future. Written as a general reference, Nonvolatile Memory Technologies with Emphasis on Flash serves as both an ideal supplemental text for undergraduate and graduate courses on nonvolatile memory and as an invaluable resource for engineers, technical managers, and other sophisticated practitioners.

Author Biography

Joe E. Brewer, MS, spent most of his career with Westinghouse Electric (now Northrop Grumman Corporation), where he retired in 1998. In 2000, he joined the faculty of the Electrical and Computer Engineering Department of the University of Florida. He was an early contributor to the IEEE Standards for MNOS Arrays and Floating Gate Arrays. He is a Fellow of the IEEE, has authored more than 100 papers, and holds seven U.S. patents.

Manzur Gill, PhD, is Chief Advancement Officer and Professor of Physics at Forman Christian College, Lahore, in Pakistan. Dr. Gill has more than twenty-five years of experience in high-tech industry and nonvolatile memory development, has authored over thirty technical publications in international journals, and holds over seventy-five patents.

Table of Contents

Foreword

Preface

Contributors

Introduction to Nonvolatile Memory

Introduction

Elementary Memory Concepts

Unique Aspects of Nonvolatile Memory

Flash Memory and Flash Cell Variations

Semiconductor Device Technology Generations

Flash Memory Applications

Introduction

Code Storage

Data Storage

Code+Data Storage

Conclusion

Memory Circuit Technologies

Introduction

Flash Cell Basic Operation

Flash Memory Architecture

Redundancy

Error Correction Coding (ECC

Design for Testability (DFT

Flash-Specifi c Circuit Techniques

Physics of Flash Memories

Introduction

Basic Operating Principles and Memory Characteristics

Physics of Programming and Erase Mechanisms

Physics of Degradation and Disturb Mechanisms

Conclusion

Nor Flash Stacked and Split-Gate Memory Technology

Introduction

ETOX Flash Cell Technology

SST SuperFlash EEPROM Cell Technology

Reliability Issues and Solutions

Applications

NAND Flash Memory Technology

Overview of NAND EEPROM

NAND Cell Operation

NAND Array Architecture and Operation

Program Threshold Control and Program Vt Spread Reduction

Process and Scaling Issues

Key Circuits and Circuit/Technology Interactions

Multilevel NAND

DINOR Flash Memory Technology

Introduction

DINOR Operation and Array Architecture

DINOR Technology Features

DINOR Circuit for Low-Voltage Operation

Background Operation Function

P-Channel DINOR Architecture

P-Channel Flash Memory Technology

Introduction

Device Structure

Operations of P-Channel Flash

Array Architecture of P-Channel Flash

Evolution of P-Channel Flash

Processing Technology for P-Channel Flash

Embedded Flash Memory

Introduction

Embedded Flash Versus Stand-Alone Flash Memory

Embedded Flash Memory Applications

Embedded Flash Memory Cells

Embedded Flash Memory Design

Tunnel Dielectrics for Scaled Flash Memory Cells

Introduction

SiO2 as Tunnel Dielectric-Historical Perspective

Early Work on Silicon Nitride as a Tunnel Dielectric

Jet-Vapor Deposition Silicon Nitride Deposition

Properties of Gate-Quality JVD Silicon Nitride Films

Deposited Silicon Nitride as Tunnel Dielectric

N-Channel Floating-Gate Device with Deposited Silicon Nitride Tunnel Dielectric

P-Channel Floating-Gate Device with Deposited Silicon Nitride Tunnel Dielectric

Reliability Concerns Associated with Hot-Hole Injection

Tunnel Dielectric for SONOS Cell

Prospects for High-K Dielectrics

Tunnel Barrier Engineering with Multiple Barriers

Summary

Flash Memory Reliability

Introduction

Cycling-Induced Degradations in Flash Memories

Flash Memory Data Retention

Flash Memory Disturbs

Stress-Induced Tunnel Oxide Leakage Current

Special Reliability Issues for Poly-to-Poly Erase and Source-Side Injection Program

Process Impacts on Flash Memory Reliability

High-Voltage Periphery Transistor Reliability

Design and System Impacts on Flash Memory Reliability

Flash Memory Reliability Screening and Qualifi cation

For Further Study

Multilevel Cell Digital Memories

Introduction

Pursuit of Low-Cost Memory

Multibit Storage Breakthrough

View of MLC Today

Low-Cost Design Implementation

Low-Cost Process Manufacturing

Standard Product Feature Set

Further Reading: Multilevel Flash Memory and Technology Scaling

Conclusion

Alternative Memory Technologies

Introduction

Limitations of Flash Memory

NROM Memories

Ferroelectric Memories

Magnetic Memories

Single-Electron and Few-Electron Memories

Resistive and Hybrid CMOS/Nanodevice Memories

NOVORAM/FRAM Cell and Architecture

Phase Change Memories

Index

About the Editors

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