Optical Semiconductor Devices

by Fukuda, Mitsuo

• ISBN13: 9780471149590
• ISBN10: 0471149594
• Edition: 1st
• Format: Hardcover
• Copyright: 1998-12-24
• Publisher: Wiley-Interscience

Summary

* Provides a clear and concise treatment, unencumbered by excessive theory Optical Semiconductor Devices is an essential resource for engineers and researchers in telecommunications and optoelectronics, equipment designers and manufacturers, and graduate students and scholars interested in this rapidly evolving field.

Author Biography

MITSUO FUKUDA is Senior Research Engineer and Supervisor at Optoelectronics Laboratories, NTT-a world-leading telecommunications company. Dr. Fukuda is the author of Reliability and Degradation of Semiconductor Lasers and LEDs.

Table of Contents

Preface	xv
Basics of Optoelectronic pn-Junction Devices	1	(92)
Basics of Semiconductors for Optoelectronic pn-Junction Devices	1	(36)
Bonding and Band Structure in Semiconductors	2	(5)
Electrical Properties	7	(1)
Intrinsic and Extrinsic Semiconductors	7	(5)
Carrier Effective Mass	12	(2)
Density of States	14	(3)
Carrier Concentration and the Fermi Level	17	(5)
Density of States and Band-Tailing in Heavily Doped Semiconductors	22	(2)
Conduction Process in Semiconductors: Scattering, Drift, and Diffusion	24	(6)
Nonradiative Recombination of Carriers (Excess Minority Carriers)	30	(7)
Optical Properties	37	(18)
Radiative Recombination and Light Absorption in Semiconductors	37	(15)
Radiative and Nonradiative Recombination Rates and Carrier Lifetime	52	(2)
Refractive Index, Dielectric Constant, Absorption Coefficient, and the Kramers-Kronig Relations	54	(1)
Electric and Optical Properties and Electric Field	55	(1)
pn-Junctions and Heterostructures	56	(26)
Formation of pn-Homojunctions	57	(2)
Built-in Potential and Depletion Layer	59	(3)
Current-Voltage Characteristics	62	(1)
Forward Bias	62	(6)
Reverse Bias	68	(5)
Heterojunctions	73	(1)
pn-Heterojunctions	73	(3)
pn-Heterojunction Under Bias	76	(2)
Isotype Heterojunction	78	(2)
Double Heterostructures	80	(2)
Low-Dimensional Structures---Quantum Wells, Strained Quantum Wells, and Other Quantum Structures	82	(11)
Quantum Wells	82	(2)
Density of States in Quantum Wells	84	(2)
Optical Properties of Quantum Wells	86	(1)
Strained Quantum Wells	87	(1)
Other Quantum Structures	88	(2)
References	90	(3)
Light-Emitting Diodes	93	(30)
Basic Structure of LEDs	93	(3)
Device Characteristics	96	(27)
Basic Characteristics	96	(5)
Radiative Transition in LEDs	101	(1)
Current-Light Output Characteristics	102	(4)
Current-Voltage Characteristics	106	(4)
Other Characteristics	110	(1)
Temperature Characteristics	110	(3)
Emission Spectra	113	(3)
Modulation Characteristics	116	(3)
Luminous Efficiency (Eye Response) and LEDs Emitting Visible Light	119	(2)
References	121	(2)
Laser Diodes	123	(88)
Basic Structure of Laser Diodes: Fabry-Perot Lasers	123	(2)
Basic Characteristics of Laser Diodes	125	(22)
Lasing Conditions	126	(1)
Threshold Gain and Current	126	(4)
Phase Condition	130	(2)
Efficiency and Output Power	132	(2)
Injected Carriers and Lasing	134	(1)
Current-Voltage Characteristics	135	(2)
Emission Spectra (Longitudinal Modes or Axial Modes)	137	(2)
Transverse Modes	139	(1)
Modes, Optical Confinement, and Structure	139	(5)
Near-Field Pattern and Far-Field Pattern	144	(3)
Active Layers: Bulk, Quantum Well, and Strained Quantum Well Types	147	(6)
Single Longitudinal Mode Laser Diodes	153	(15)
Distributed Feedback Laser Diodes	153	(1)
Gratings and Lasing Wavelength	154	(2)
Gratings and Phase-Shift	156	(2)
Current-Light Output and Spectral Characteristics	158	(3)
Optical Field Distribution and Emission Spectra	161	(3)
Wavelength Tuning and Multisection DFB Laser Diodes	164	(1)
Distributed Bragg Reflector Laser Diodes	165	(3)
Operating Characteristics	168	(32)
Temperature Characteristics	168	(4)
Transient Phenomena and Modulation	172	(1)
Transient Phenomena	172	(6)
Factors Limiting Modulation	178	(6)
Coherence, Spectral Linewidth, and the Linewidth Enhancement Factor	184	(1)
Coherent Light	184	(1)
Spectral Linewidth	185	(3)
Linewidth Enhancement Factor: α Parameter	188	(1)
Noise	189	(1)
Quantum (Shot) Noise	190	(3)
Mode-Partition Noise and Mode-Hopping Noise	193	(2)
Optical Feedback Noise	195	(5)
High-Power Laser Diodes and Surface-Emitting Laser Diodes	200	(11)
High-Power Laser Diodes	200	(1)
Surface-Emitting Laser Diodes	201	(3)
References	204	(7)
Photodiodes	211	(54)
Basics of Photodiodes	211	(9)
Photovoltaic Effect and Current--Voltage Characteristics	211	(1)
pn-Junction Under Reverse Bias and Reverse Current (Dark Current)	212	(1)
Diffusion Current	212	(1)
Surface Leakage Current	213	(1)
Generation-Recombination Current	214	(1)
Tunneling Current	215	(1)
Dark Current and Temperature	216	(1)
Optical Absorption and Quantum Efficiency	217	(3)
Solar Cells	220	(6)
Basic Characteristics: Current--Voltage Characteristics	220	(3)
Output Power and Efficiency	223	(1)
pn-Heterojunction Solar Cell	224	(2)
pin-Photodiodes	226	(17)
p-i-n Structure and i-Layer	227	(3)
Basic Characteristics: Current--Voltage Characteristics	230	(1)
Photocurrent and Dark Current	230	(1)
Drift Current and Diffusion Current	231	(2)
External Quantum Efficiency	233	(1)
Frequency Response	234	(1)
CR-Time Constant	235	(2)
Transit Time Within the Depletion Layer	237	(1)
Relations Between Frequency Response, CR-Time Constant, and Transit Time	238	(1)
Noise and Signal-to-Noise Ratio for pin-Photodiodes	239	(1)
Quantum Noise and Thermal Noise	239	(2)
Signal-to-Noise (Power) Ratio	241	(1)
Heterojunction and Waveguide-Type pin-Photodiodes	242	(1)
Avalanche Photodiodes	243	(13)
Basic Characteristics	246	(1)
Impact Ionization and Ionization Coefficients	246	(2)
Avalanche Breakdown (and Zener Breakdown)	248	(3)
Avalanche Multiplication and Photocurrent-Voltage Characteristics	251	(3)
Device Structure and Avalanche Breakdown	254	(2)
Frequency Response	256	(2)
Noise and Signal-to-Noise Ratio for Avalanche Photodiodes	258	(3)
Quantum Noise, Thermal Noise, and Excess Noise	258	(1)
Signal-to-Noise Ratio	259	(2)
Superlattice APDs	261	(4)
References	262	(3)
Optical Modulators	265	(24)
Physical Phenomena Used in Optical Modulation	266	(4)
Electrooptic Effect (Pockels Effect and Kerr Effect)	266	(1)
Franz--Keldysh Effect	267	(1)
Stark Effect	268	(1)
Quantum-Confined Stark Effect (QCSE)	268	(1)
Free Carrier Effect	269	(1)
Basics of Optical Modulators	270	(19)
Phase Modulators	272	(1)
Electrooptic Crystal Modulators	272	(1)
Semiconductor Modulators	273	(3)
Intensity Modulators	276	(1)
The Mach--Zehnder Type	277	(1)
The Electroabsorption Type	278	(3)
Modulation Characteristics and Frequency Response	281	(1)
Extinction Ratio (Modulation Index)	281	(2)
Efficiency, Insertion Loss, and Chirping	283	(1)
Frequency Response	283	(3)
Temperature Characteristics	286	(1)
References	287	(2)
Device Fabrication and Packaging	289	(37)
Crystal Growth	289	(5)
Liquid-Phase Epitaxy	290	(2)
Metal-Organic Vapor-Phase Epitaxy	292	(1)
Molecular Beam Epitaxy	293	(1)
Device Processes	294	(11)
Electrode Formation	294	(1)
Materials for Electrodes	294	(2)
Schottky-Type and Alloy-Type Electrodes	296	(2)
Dielectric Film Deposition	298	(1)
Adhesion, Damage, and Stability	298	(3)
Antireflective and Highly Reflective Coatings	301	(2)
Lithography and Chemical and Physical Etching	303	(2)
Packaging	305	(21)
Bonding	305	(1)
Solder for Bonding	305	(4)
Soft Solder and Hard Solder	309	(1)
Thermal Resistance and Heat Sinks	309	(3)
Optical Coupling	312	(4)
Temperature Control: Peltier Cooler and Thermistors	316	(1)
Peltier Cooler	316	(2)
Thermistors	318	(1)
Hermetic Sealing and Plastic Packaging	318	(1)
Hermetic Sealing	318	(2)
Plastic Packaging	320	(3)
References	323	(3)
Reliability	326	(55)
Basics of Reliability	326	(9)
Reliability Function and Failure Rate	326	(2)
Expression of Reliability for Nonrepairable Devices	328	(1)
Reliability Estimation for Nonrepairable Devices	329	(4)
Reliability Tests and Conditions	333	(2)
Basics of Degradation and Reliability for Optoelectronic pn-Junction Devices	335	(19)
Degradation of Devices Used Under Forward Bias: Laser Diodes and LEDs	337	(1)
Crystal: Dislocation and Precipitation	337	(4)
Electrode: Diffusion and Reaction	341	(3)
Facet (Surface): Oxidation and Catastrophic Optical Damage	344	(4)
Buried Heterointerface	348	(3)
Degradation of Devices Used Under Reverse Bias: Photodiodes and Modulators	351	(1)
pn-Junction at the Surface or at the Interface Between the Semiconductor and the Dielectric Coating Film	351	(1)
pn-Junction in the Inner Region: Microplasma	352	(1)
Electrode: Reaction	352	(1)
Dielectric Film Between the Electrode and the Semiconductor: Electric Breakdown	352	(2)
Reliability	354	(15)
Light-Emitting Diodes	354	(2)
Laser Diodes	356	(1)
Changes in Lasing Characteristics	357	(7)
Lasing Characteristics and Failure Criteria	364	(1)
Wavelength (Material) and Reliability	364	(2)
Photodiodes	366	(2)
Modulators	368	(1)
Packaging Problems	369	(7)
Bonding Part: Solder Instability	369	(2)
Electric (Peltier) Coolers and Thermistors	371	(1)
Optical Coupling	372	(1)
Packaging-Induced Failure	373	(1)
Plastic Encapsulation	374	(2)
Electrical Surge and Electrostatic Discharge	376	(5)
References	377	(4)
Application of Optoelectronic pn-Junction Devices	381	(32)
Optoelectronic pn-Junction Devices in Fiber Optics	381	(20)
Public Optical Fiber Communication Systems	382	(2)
Analog Systems	384	(4)
Digital Systems	388	(3)
Wavelength (Frequency)-Division-Multiplexing Systems	391	(2)
Coherent Systems	393	(2)
Optical Fiber Amplifiers	395	(3)
Optical Fiber Data Links	398	(1)
Optical Fiber Local Area Networks	399	(1)
Digital Audio Field	400	(1)
Mobile Fields	401	(1)
Optoelectronic pn-Junction Devices in Beam Optics	401	(12)
Optical Disks	401	(1)
Read-Only Optical Disks	402	(1)
Digital Video Disks	403	(1)
Rewritable Optical Disks	404	(2)
Printers	406	(2)
Hologram Scanners	408	(1)
Facsimile Machines	409	(1)
Other Applications	409	(2)
References	411	(2)
Index	413