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9780849322600

Power Electronic Modules: Design and Manufacture

by ;
  • ISBN13:

    9780849322600

  • ISBN10:

    084932260X

  • Edition: 1st
  • Format: Hardcover
  • Copyright: 2004-09-29
  • Publisher: CRC Press

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Summary

Designing and building power semiconductor modules requires a broad, interdisciplinary base of knowledge and experience, ranging from semiconductor materials and technologies, thermal management, and soldering to environmental constraints, inspection techniques, and statistical process control. This diversity poses a significant challenge to engineers, and a book that brings together the essential elements of these technologies is long overdue.Power Electronic Modules: Design and Manufacture fills that void. It covers not only the basic technologies, but also the latest advances in these areas. Organized into three main sections, coverage begins with discussions on the materials used and their key properties, including a comparison of those properties with the requirements of high-performance, cost-effective power modules and the pros and cons of selected materials. The focus then shifts to manufacturing processes and quality control. The authors outline each key manufacturing operation and its corresponding inspection techniques and include two detailed manufacturing flow charts, one for the standard approach and one for a new all-solder approach. The final section of the book examines actual samples based on four different designs. The authors compare these samples in terms of thermal-electrical performance, thermal-mechanical performance, physical characteristics, and cost.The growing importance of power modules has led to numerous but scattered journal and conference articles. Clearly written, authoritative, and well organized, this is a practical, up-to-date reference that forms a unique, one-stop handbook for their design and manufacture.

Table of Contents

1 Introduction 1(6)
References
6(1)
2 Selection Procedure 7(4)
References
9(2)
3 Materials 11(92)
3.1 Insulating Substrate and Metallization
11(24)
3.1.1 Selection Criteria
11(2)
3.1.2 List of Insulating Substrates
13(6)
3.1.3 Selected Insulating Substrates
19(5)
3.1.3.1 Alumina (96%, 99%)
19(1)
3.1.3.2 Aluminum Nitride (AIN)
20(1)
3.1.3.3 Beryllia (BeO)
21(1)
3.1.3.4 Silicon Nitride (Si3N4) - Sintered
22(2)
3.1.4 Metallization on Insulating Substrates
24(1)
3.1.5 Types of Metallizations
24(6)
3.1.5.1 Metallization Technologies
24(1)
3.1.5.2 Types of Metallization
25(13)
3.1.5.2.1 Thick Film
25(2)
3.1.5.2.2 Thin Film
27(1)
3.1.5.2.3 Copper Metallization
27(3)
3.1.6 Analysis of Copper Metallization Suppliers
30(5)
References
35(1)
3.2 Baseplate
36(9)
3.2.1 Selection Criteria
36(1)
3.2.2 List of Baseplate Materials
37(1)
3.2.3 General Summary of Available Base Materials
38(6)
3.2.3.1 Copper/Molybdenum/Copper Laminate
39(1)
3.2.3.2 Aluminum/Silicon Carbide Metal Matrix Composite
40(1)
3.2.3.3 Copper/Molybdenum Matrix
41(1)
3.2.3.4 Copper/Tungsten Matrix
42(1)
3.2.3.5 Graphite Fiber-Reinforced Al and Cu Alloys
43(1)
3.2.4 Production Cost
44(1)
3.2.5 Compatible Baseplate/Substrate Material Chart
44(1)
References
45(1)
3.3 Bonding Material
45(18)
3.3.1 Pressure Contact
45(1)
3.3.2 Bonding Material
46(2)
3.3.3 Selection Criteria for Solder Alloys
48(10)
3.3.4 Some Useful Information on Non-Pb-Based (or Pb-Free) Solders
58(1)
3.3.5 Other Components of the Solder Paste
59(3)
3.3.6 Manufacturing Suitability, Processing, and Facility Conditions
62(1)
References
63(1)
3.4 Power Interconnection and Terminal Power Interconnection
64(5)
3.4.1 Terminals
65(5)
3.4.1.1 Terminals Formed by Soldering to the Ceramic Metallization or by Integrating with the Case
66(1)
3.4.1.1.1 Copper Based
66(1)
3.4.1.1.2 Nickel Based
66(1)
3.4.1.2 Terminals Formed by Extending and Bending the Ceramic Metallization
67(2)
References
69(1)
3.5 Encapsulant
70(14)
3.5.1 Criteria for Selection
70(1)
3.5.2 Selection
71(1)
3.5.3 Descriptions of Encapsulants
71(4)
3.5.3.1 Silicone Gel Encapsulant
71(1)
3.5.3.2 Silicone Encapsulant
72(1)
3.5.3.3 Parylene Coatings
72(1)
3.5.3.4 Silicon Nitride Coating
73(1)
3.5.3.5 Acrylic Encapsulant
73(1)
3.5.3.6 Polyurethane Encapsulant
73(1)
3.5.3.7 Epoxy Encapsulant
74(1)
3.5.4 Construction Options
75(2)
3.5.5 Suppliers
77(1)
3.5.6 Representative Specifications of Suppliers
77(7)
References
84(1)
3.6 Plastic Case and Cover
84(11)
References
95
3.7 Power Semiconductor Chips
90(11)
3.7.1 IGBT Chip
90(8)
3.7.1.1 Body Structure
90(2)
3.7.1.1.1 Grinding
91(1)
3.7.1.1.2 Localized Thinning
92(1)
3.7.1.1.3 Plasma-Assisted Chemical Etch (PACE)
92(1)
3.7.1.7.4 Spin-Etch
92(1)
3.7.1.2 Gate Structure
92(1)
3.7.1.3 Process Control
92(6)
3.7.2 FRED (Fast Recovery Epitaxial Diode) Chip
98(3)
References
101(2)
4 Manufacturing of Power IGBT Modules 103(102)
4.1 Manufacturing Process
103(59)
4.1.1 Sorting/Grouping of the IGBT Chips
105(3)
4.1.1.1 Current Imbalance
105(2)
4.1.1.2 Junction Temperature Imbalance
107(1)
4.1.2 Cleaning
108
4.1.2.1 Aqueous Cleaning
110(1)
4.1.2.2 Semiaqueous Cleaning
111(1)
4.1.2.3 Solvent Cleaning
112(3)
4.1.2.4 Key Cleaning Steps for Power Module
115(2)
4.1.2.4.1 Presolder Cleaning of the Parts
115(1)
4.1.2.4.2 Postsolder Cleaning of the Subassembly
116(1)
4.1.2.4.3 Pre-Wire-Bond Cleaning
116(1)
4.1.2.4.4 Other Cleaning Steps
116(1)
4.1.2.5 New Dry-Cleaning Method
117(1)
4.1.2.6 Level of Cleanliness
118
4.1.2.6.1 Coarse Testing
118(1)
4.1.2.6.2 Analytical Testing
118
4.1.3 Solder Attachment
18(117)
4.1.3.1 Single-Chamber/Vacuum Soldering
123(1)
4.1.3.2 Reflow Profile
124(4)
4.1.3.2.1 Preheat Soak Time and Temperature
126(1)
4.1.3.2.2 Time above Liquidus
126(1)
4.1.3.2.3 Peak Temperatures
126(1)
4.1.3.2.4 Initial Ramp Rate
126(1)
4.1.3.2.5 Cooling Rate
127(1)
4.1.3.3 Processing Gas
128(2)
4.1.3.4 Application of Solder
130(2)
4.1.3.5 Attachment of Fast-On Terminals
132(1)
4.1.3.6 Repair/Rework
133(2)
4.1.3.6.1 Hot Air
133(1)
4.1.3.6.2 IR Heating
134(1)
4.1.3.6.3 Conduction
135(1)
4.1.4 Power Interconnections
135(10)
4.1.4.1 Ultrasonic Wire Bonding
136(4)
4.1.4.2 Solder Bump
140(3)
4.1.4.3 Underfills/Top fills
143(2)
4.1.4.3.1 Capillary
144(1)
4.1.4.3.2 Glob
145(1)
4.1.4.4 Solder Bump Pattern
145(1)
4.1.5 Electrical and Thermal Testing
145(18)
4.1.5.1 General
145(4)
4.1.5.2 Incoming Inspection
149(3)
4.1.5.2.1 IGBT
149(2)
4.1.5.2.2 FRED
151(1)
4.1.5.3 In-Process Production Testing
152(1)
4.1.5.4 Final Testing for the Finished Module
152(3)
4.1.5.4.1 Electrical Tests
152(1)
4.1.5.4.2 Short-Circuit Tests
153(2)
4.1.5.4.3 SOA Test
155(1)
4.1.5.5 Test System Considerations
155(3)
4.1.5.5.1 Mainframe Tester
158(1)
4.1.5.5.2 Test Station A
158(1)
4.1.5.5.3 External Tester (9424-KT/B)
158(1)
4.1.5.5.4 External Tester (3300-SW)
158(1)
4.1.5.6 Thermal Tests
158(2)
4.1.5.6.1 Temperature-Sensing Basics
159(1)
4.1.5.6.2 Sense Junction Calibration
159(1)
4.1.5.6.3 Thermal Resistance
160(1)
4.1.5.6.4 Solder Attachment Evaluation and Heating Characterization
160(1)
4.1.5.7 Test Fixtures
160(2)
References
162(1)
4.2 Process Control/Long-Term Reliability
163(22)
4.2.1 Process Control
163(1)
4.2.2 Tools
164(2)
4.2.2.1 Thermal-Electrical Mapping or IR Thermography
164(1)
4.2.2.2 Thermal-Mechanical Characterization
165(1)
4.2.3 In-Process Inspection
166(9)
4.2.3.1 A Partial List of Visual Inspection Criteria for IGBT and FRED Chips
166(2)
4.2.3.2 Statistical Process Control
168(7)
4.2.3.2.1 Random Selection
168(3)
4.2.3.2.2 Sampling Plan
171(4)
4.2.4 Long-Term Reliability
175(12)
4.2.4.1 Good Design Practices
176(1)
4.2.4.2 HALT and HASS
177(2)
4.2.4.3 Life Tests
179(4)
4.2.4.3.1 Failure Rate
180(3)
4.2.4.4 Failure Analysis
183(2)
References
185(1)
4.3 Manufacturing Facilities
186(1)
4.3.1 ESD
187(6)
4.3.1.1 Test Schedule for ESD-Controlled Products
188(1)
4.3.1.2 ESD Audit
189(1)
4.3.2 DI Water
189(1)
4.3.3 Processing Gas
189(1)
4.3.4 Chemicals
190(1)
4.3.5 Electrical Supply
190(1)
4.3.6 Relative Humidity
190(1)
4.3.7 Air-Flow and Pressure Differentials
190(1)
4.3.8 Room Particle Count
190(1)
4.3.9 Storage Cabinet
191(1)
4.3.9.1 Passive Parts and Tools
191(1)
4.3.9.2 Power IGBT /FRED Chips, Subassembled IGBT Parts, and Finished Modules
191(1)
4.3.10 Cleanroom Accessories and Details
191(1)
4.3.11 Safety Standards
191(1)
4.3.12 Environmental Requirements
192(1)
References
193(1)
4.4 Manufacturing Flow Charts
193(12)
4.4.1 Standard Manufacturing Process
194(1)
4.4.2 Alternative Manufacturing Process
194(11)
5 Design 205(54)
5.1 Thermal Management
207(5)
5.1.1 Stack Structures
207(1)
5.1.2 Thermal Conduction Analysis
207(2)
5.1.3 Thermal Stress Analysis
209(3)
References
212(1)
5.2 Circuit Partitioning
213(5)
5.2.1 Thermal Stress between the Chips and the Insulating Substrate
213(2)
5.2.1.1 Case 1
215(1)
5.2.1.2 Case 2
215(1)
5.2.2 Size of Insulating Substrate
215(2)
5.2.3 Paralleling of IGBT Chips
217(1)
5.2.3.1 Electrical Matching
217(1)
5.2.3.2 Thermal Coupling
217(1)
5.2.4 Cost
217(1)
References
218(1)
5.3 Design Guidelines and Considerations
218(15)
5.3.1 Ceramic Substrate
219(1)
5.3.2 Metallization Pattern on the Ceramic Substrate
219(4)
5.3.2.1 Dimensions
220(1)
5.3.2.2 Guidelines for DBC-A12O3, ABC-A1N, Si3N4 Metallization Pattern
220(3)
5.3.2.3 Plating
223(1)
5.3.3 Metal Baseplate
223(3)
5.3.3.1 Dimensions
223(2)
5.3.3.2 Baseplate Characteristics
225(1)
5.3.4 Power Terminals/Fast-On Tabs/Connecting Bridges
226(3)
5.3.4.1 Dimensions
226(1)
5.3.4.2 Materials
226(1)
5.3.4.3 Power Terminals
226(2)
5.3.4.4 Fast-On Tabs
228(1)
5.3.4.5 Plating
229(1)
5.3.4.6 Connecting Bridge
229(1)
5.3.5 Plastic Case and Cover
229(1)
5.3.6 Solder Preform
230(3)
References
233(1)
5.4 Samples
233(25)
5.4.1 Estimated Manufacturing Cost
234(1)
5.4.2 Theoretical Comparison of Design Option
234(1)
5.4.3 Thermal Behavior of the Samples
234(24)
5.4.3.1 Thermal Mechanical Characterization
234(16)
5.4.3.1.1 IGBT /FRED Chips
248(1)
5.4.3.1.2 Baseplate
249(1)
5.4.3.2 Thermal Impedance Characterization
250(8)
References
258(1)
Appendix A 259(4)
Power MOSFET
259(1)
Power Thyristor
260(1)
Power Rectifier
261(2)
Appendix B 263(2)
Barcode and 2D Data Matrix Symbol
263(2)
Index 265

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