Predictive Simulation of Semiconductor Processing

by Dabrowski, Jarek; Weber, Eicke R.

• ISBN13: 9783540204817
• ISBN10: 3540204814
• Format: Hardcover
• Copyright: 2004-06-30
• Publisher: Springer Verlag

Summary

Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

Author Biography

J. Dabrowski: Born in Warsaw, Poland, Sept. 29, 1958. PhD, Institute of Physics of the Polish Academy of Science (IF PAN), Warsaw, 1989. Scientific staff member IF PAN 1983-1992; postdoctoral fellow Fritz Haber Inbstitute of the Max Planck Society, Berlin, Germany, 1990-1991; postdoctoral fellow Xerox Palo Alto Research Center, California, 1992; since 1993 with IHP-microelectronics, Frankfurt (Oder), Germany. Conference series chairman, Challenges in Predictive Process Simulation (1997, 2000, 2002); international advisory commmittee member, International Training Institute for Materials Science, Hanoi, Vietnam. Project leader, German Research Society (1998-2000); von Neuman Institute for Computing (since 1993). Author (monograph), "Silicon surfaces and formation of interfaces; basic science in the industrial world" (World Scientific, 2000). Editor (book) , ""Recent Developments in Vacuum Science and Technology" (Research Signpost, 2003). Research in atomic diffusion mechanism in solid state; atomic structure of surfaces and semiconductor/dielectric interfaces; atomic structure of defects in semiconductors and insulators; signal processing for telecommunication. Achievements include discovery of atomic structure of the clean Si(113) surface; atomic structure of the main electron trap in GaAs (EL2 defect); atomic structure of the interface between a high-K dielectric (Pr2O3) and Si(001). Patents for silicon microelectronic technology; patents pending for telecommunication.

Table of Contents

Transistors and atoms	p. 1
Atomistic simulations of process at surfaces	p. 39
Atomistic simulations in materials processing	p. 73
Atomistic simulation of decanano MOSFETs	p. 111
Modeling and simulation of heterojunction bipolar transistors	p. 157
Gate oxide reliability : physical and computational models	p. 201
High-K dielectrics : the example of Pr[subscript 2]O[subscript 3]	p. 259
Atomistic simulation of Si[subscript 3]N[subscript 4] CVD from dichlorosilane and NH[subscript 3]	p. 295
Interconnects and propagation of high frequency signals	p. 357
Modeling of electromigration in interconnects	p. 387
Predictive modeling of transition metal gettering : applications and materials science challenges	p. 457
Table of Contents provided by Blackwell. All Rights Reserved.