Progress in Semiconductors II

by Jagadish, C. C.; Manasreh, M. o.; Weaver, B. D.; Zollner, S.

• ISBN13: 9781558996816
• ISBN10: 1558996818
• Format: Hardcover
• Copyright: 2003-04-16
• Publisher: Cambridge Univ Pr

Summary

Recent years have witnessed dramatic success in the development of semiconductor materials and related quantum structures for applications in electronics and optoelectronics. Progress has also been made in manufacturable (low cost, high volume) growth and processing of semiconductor materials for such device structures. Novel approaches have been proposed to integrate compound semiconductor devices with conventional silicon processing. This book provides a comprehensive overview of the progress on growth, properties and processing of semiconductor materials and quantum structures, as well to underscore the progress on devices such as transistors, light sources, detectors and modulators. Brought to maturity, these devices will likely see widespread application in infrared imaging, chemical and biological sensing, surveillance, short links, space-based applications, solar cells, high-bandwidth communications, and more. Topics include: electronic devices; Si/Ge devices and technology; zinc oxide and related compounds; emitters, lasers and photovoltaics; nanostructures; innovative materials and devices; detectors; and III-nitride materials and devices.

Table of Contents

Preface	p. xvii
Materials Research Society Symposium Proceedings	p. xviii
Electronic Devices
Control of Indium Surface Segregation in GaAs Layer on InGaP Grown by MOVPE	p. 3
Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates	p. 9
Epitaxial Praseodymium Oxide: A New High-K Dielectric	p. 15
Z-Contrast Imaging and EELS of Dislocation Cores at the Si/GaAs Interface	p. 25
Fracture Mechanical Evaluation of GaAs Wafers	p. 29
Phonon Frequencies and Thermal Expansion of III-V Compounds	p. 35
Si/Ge Devices and Technology
Terahertz-Emitting Silicon-Germanium Devices	p. 43
New Ge-Sn Materials With Adjustable Bandgaps and Lattice Constants	p. 49
Metal-Induced Low-Temperature Crystallization of Amorphous SiGe on Insulating Films	p. 55
Process Control of Epi-Layers for SiGe:C Hetero-Structure Bipolar Transistors	p. 61
Raman Scattering Study for Self-Organized Ge Quantum Dots Formed on Si Substrate	p. 67
Zinc Oxide and Related Compounds
ZnO and ZnMgOGrowth by Molecular Beam Epitaxy	p. 75
Luminescence and EPR Study of Lithium-Diffused ZnO Crystals	p. 87
MBE Growth and Optical Properties of ZnSeO	p. 93
Implant Isolation of ZnO Epitaxial Layers	p. 99
Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals	p. 105
Effect of Remote Hydrogen Plasma Treatment on ZnO Single Crystal Surfaces	p. 111
Emitters, Lasers and Photovoltaics
Ultraviolet Emitting SrS: Te Thin Films	p. 119
Thermally Evaporated AgGaTe[subscript 2] Thin Films For Low-Cost p-AgGaTe[subscript 2]/n-Si Heterojunction Solar Cells	p. 131
Properties of GaAsSb QW Heterostructures Having Various Barrier Materials Grown by Metalorganic Chemical Vapor Deposition	p. 137
High Efficiency Bulk Crystalline Silicon Light Emitting Diodes	p. 143
Extremely Large Er Excitation Cross Section in Er,O-Codoped GaAs Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy	p. 149
High-Resolution Study of Light and Heat Patterns in Infrared Emitting Devices	p. 155
Poster Session
Electrical and Optical Properties of Zinc Oxide Thin Films and Heavily Aluminum-Doped Zinc Oxide Thin Films Prepared by Molecular Beam Epitaxy	p. 163
Passivation of Defects in ZnO by Hydrogen Plasma Irradiation	p. 169
Structural, Optical and Electrical Properties of the Novel Semiconductor Alloy ZnO[subscript x]Te[subscript (1-x)]	p. 175
The Growth and Characterization of Zinc Oxide Thin Film on Fused Silica and SiO[subscript 2]/Si(100) Substrates	p. 181
A Differential Scanning Calorimetry (DSC) Study on the Pyrolysis Mechanism of Zinc Oxide CVD Precursor, Zinc Acetylacetonate	p. 187
Pulsed Laser Deposition of Stable Cubic ZnO/MgO Multilayers	p. 193
A Study on Impact of Process Parameters to Metal Organic Chemical Vapor Deposition Grown (002) Zinc Oxide Thin Films, at 320[degree]C	p. 199
Effect of Growth Temperature and Annealing on ZnO	p. 207
Quantum Efficiency Modeling of Amorphous/Crystalline Silicon Heterojunction Photovoltaic Devices	p. 213
A Single Source Approach to Deposition of Nickel and Palladium Sulfide Thin Films by LP-MOCVD	p. 219
Screen Printable Doped Self-Aligned Metallization for Solar Cells	p. 225
Photosensitive Amorphous Si Thin Films Prepared by Magnetron Technology	p. 231
Deposition of II/VI Thin Films from Novel Single-Source Precursors	p. 237
Amorphous-Microcrystalline Silicon Films Obtained Using Hydrogen Dilution in a DC Saddle-Field Glow-Discharge	p. 243
The Role of Hydrogen in Laser Crystallized Polycrystalline Silicon	p. 249
The Energy Band Structures of Cd[subscript 1-x]Zn[subscript x] Te Polycrystalline Thin Films and Their Applications for Photovoltaic Devices	p. 255
Tunnel Currents in the Photo-Field Detectors and the Auger Transistor under Strong Electric Field	p. 259
A Boron Doped Amorphous Silicon Thin-Film Bolometer for Long Wavelength Detection	p. 265
Characterization of Sputter Deposited PbTe on Si (111) for Optoelectronic Applications	p. 271
Far-Infrared Magnetooptical Generalized Ellipsometry Determination of Free-Carrier Parameters in Semiconductor Thin Film Structures	p. 277
Far-Infrared Dielectric Function and Phonon Modes of Spontaneously Ordered (Al[subscript x]Ga[subscript 1-x])[subscript 0.52]In[subscript 0.48]P	p. 283
Electrodeposition of Cu[subscript 2]Se Thin Films by Electrochemical Atomic Layer Epitaxy (EC-ALE)	p. 289
Optical Absorption of Large Band-Gap Sb[subscript x]Bi[subscript 1-x]I[subscript 3] Alloys	p. 295
Intersubband Transitions in Proton Irradiated InGaAs/InAlAs Multiple Quantum Wells Grown on Lattice Matched InP Substrate	p. 301
Composition of [beta]FeSi[subscript 2] Thin-Films Grown by a Pulsed Laser Deposition Method	p. 309
Native Point Defect Interactions in ZGP Crystals under Influence of e-Beam Irradiation	p. 315
Raman and Magneto Transport Studies of MBE Grown [beta]FeSi[subscript 2], [beta](Fe[subscript 1-x]Cr[subscript x])Si[subscript 2], and [beta](Fe[subscript 1-x]Co[subscript x])Si[subscript 2]	p. 321
Design and Fabrication of a VCSEL With Graded Bragg Mirror Interfaces for Operation at 850 nm	p. 327
High Gain, Low Threshold Current GaInAsP Based VCSELS for Operation at 1.24 um	p. 331
Novel Resistance Reduction and Phase Changes of Contacts to n-Type InP by Rapid Thermal Annealing	p. 337
Design of a 364 nm Electrically Pumped Multi-Quantum Well Continuous Wave Nitride Vertical Cavity Surface Emitting Laser	p. 343
DLTS Studies of Defects Produced in n-Type Silicon by Hydrogen Implantation at Low Temperature	p. 349
Nanostructures
Carrier Recombination in InAs/GaAs Quantum Dot and GaInNAs/GaAs Quantum Well LEDs Emitting Near 1300 nm	p. 357
Formation of Defects in MBE Re-Grown GaAs Films on GaAs/AlGaAs Heterostructures	p. 369
Interdiffusion in Semiconductor Quantum Dot Structures	p. 375
1.5 [mu]m Range Self-Organized In[subscript 0.65]Ga[subscript 0.3]5As/In[subscript 0.52]Al[subscript 0.48]As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy	p. 383
Characterization of Metallic and Metal Oxide Nanoparticles Produced by Electrothermal-Chemical Synthesis	p. 389
Innovative Materials and Devices
Characterization of AlInAsSb and AlGaInAsSb MEB-Grown Digital Alloys	p. 397
Yellow-Green Emission for ETS-LEDs and Lasers Based on a Strained-InGaP Quantum Well Heterostructure Grown on a Transparent, Compositionally Graded AlInGaP Buffer	p. 409
Trace Water Detection in Phosphine by Cavity Ring-Down Spectroscopy	p. 419
Poster Session
Improved Device Performance of In[subscript 0.5]Ga[subscript 0.5]P/In[subscript 0.22]Ga[subscript 0.78]As/GaAs MOS p-HEMT Using a Selective Liquid Phase Oxidation	p. 427
Comparison of the Strain and Stress in Bonded and Epitaxial Gallium Arsenide on Silicon by Photoreflectance Spectroscopy Measurements	p. 433
Ti/Ni/Au/Diamond MIS Field Effect Transistors With TiO[subscript 2] Gate Dielectric	p. 439
Oxygen Incorporation into MBE Grown AlGaAs Layers	p. 445
Electronic Properties of n-type Al[subscript x]Ga[subscript 1-x]As Alloys	p. 451
Stability of Non-Hydrogenated and Hydrogenated P-Channel Polycrystalline Silicon Thin-Film Transistors	p. 457
Graded-Band-Gap Semiconductors: The Possibilities for Improvement of p-n Junction Performance	p. 463
MOCVD Growth and Characterization of GaInNAs/GaAs/InGaAs/GaAs Quantum Well Structures	p. 469
Silicon CMOS BEOL Compatible Optical Waveguide Micro-Mirrors	p. 475
Noise Sources in Polycrystalline Silicon Thin-Film Transistors	p. 481
Changes in Structural and Optical Properties of CdS Thin Films During the Process of Chemical Bath Deposition	p. 487
Development of an On-Chip Semiconducting Readout For Subsurface Optical Data	p. 495
500[degree]C Formation of Poly-Si[subscript 1-x]Ge[subscript x] (x [greater than or equal] 0.5) on SiO[subscript 2] by Ion-Beam Stimulated Solid Phase Crystallization	p. 501
MOCVD Growth and Characterization of InNAs/GaAs Quantum Wells	p. 507
Photoluminescence in UHV/CVD Tensile-Strained Si Type-II Quantum Wells on Bulk Crystal SiGe Substrates	p. 513
Photoluminescence of Ge Nanoclusters in Ion Implanted SiO[subscript 2]	p. 519
Optical Properties of Al[subscript 0.70]Ga[subscript 0.30]As:Er,Yb	p. 525
Photoreflectance Study of Hydrogenated (InGa)(AsN)/GaAs Heterostructures	p. 531
Optical and EPR Study of Defects in Cadmium Germanium Arsenide	p. 537
Effect of Pressure-Enhanced Single Step Annealing on the Silicon Photoluminescence	p. 543
Mesoscopic Study of the Electronic Properties of Thin Polymer Films	p. 549
Lanthanide Doped Cubic Boron Nitride	p. 555
Growth and Characterization of Epitaxial Films of ZnGeP[subscript 2]	p. 561
Detectors
Intersubband Transitions in InAs/AlSb Quantum Wells	p. 571
Far Infrared Spectroscopy of In[subscript 0.53]Ga[subscript 0.47]As Quantum Wells on InP(100)	p. 583
GaSb-Based Materials for Mid-Infrared Photodiodes Operating in the 0.9-2.55 [mu]m Spectral Range	p. 589
Thermal Stability in HgCdTe IR Photodiodes	p. 595
Intersubband Transitions in In[subscript x]Ga[subscript 1-x]As/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection	p. 607
Spectral Response Modification of Quantum Well Infrared Photodetector by Quantum Well Intermixing	p. 613
III-Nitride Materials and Devices
Preparation of Optoelectronic Devices Based on AIN/AlGaN Superlattices	p. 621
Dilute Group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and Realization of Long Wavelength (2.3 [mu]m) GaInAsN QWs on InP	p. 627
Low Temperature Photoluminescence Studies of Narrow Bandgap GaAsSbN Quantum Wells on GaAs	p. 637
Interband Transitions in GaInNAs/GaAs Single Quantum Wells	p. 647
Influence of Low-Energy Electron Beam Irradiation on Defects in Activated Mg-Doped GaN	p. 653
Electrical Isolation of p-Type GaAsN Epitaxial Layers by Ion Irradiation	p. 659
The Compositional and Optical Characterizations of InGaAsN Alloy Semiconductor Grown by MOVPE	p. 665
Author Index	p. 671
Subject Index	p. 677
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