Properties of Advanced Semiconductor Materials GaN, AIN, InN, BN, SiC, SiGe

by Levinshtein, Michael E.; Rumyantsev, Sergey L.; Shur, Michael S.

• ISBN13: 9780471358275
• ISBN10: 0471358274
• Edition: 1st
• Format: Hardcover
• Copyright: 2001-02-21
• Publisher: Wiley-Interscience

Summary

Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.

Author Biography

Michael E. Levinshtein is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

Sergey L. Rumyantsev is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

Michael S. Shur is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

Table of Contents

Contributors	xiii
Preface	xv
Gallium Nitride (GaN)	1	(30)
V. Bougrov
M. Levinshtein
S. Rumyantsev
A. Zubrilow
Basic Parameters at 300 K	1	(2)
Band Structure and Carrier Concentration	3	(6)
Temperature Dependences	4	(2)
Dependence on Hydrostatic Pressure	6	(1)
Band Discontinuities at Heterointerfaces	7	(1)
Effective Masses	7	(1)
Donors and Acceptors	8	(1)
Electrical Properties	9	(7)
Mobility and Hall Effect	9	(3)
Two-Dimensional Electron Gas Mobility at AlGaN/GaN Interface	12	(1)
Transport Properties in High Electric Field	13	(2)
Impact Ionization	15	(1)
Recombination Parameters	15	(1)
Optical Properties	16	(6)
Thermal Properties	22	(2)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties	24	(7)
References	28	(3)
Aluminum Nitride (AIN)	31	(18)
Yu. Goldberg
Basic Parameters at 300 K	31	(2)
Band Structure and Carrier Concentration	33	(4)
Temperature Dependences	33	(1)
Dependences on Hydrostatic Pressure	34	(1)
Band Discontinuities at Heterointerfaces	35	(1)
Effective Masses	35	(1)
Donors and Acceptors	36	(1)
Electrical Properties	37	(2)
Mobility and Hall Effect	37	(1)
Recombination Parameters	38	(1)
Optical Properties	39	(2)
Thermal Properties	41	(3)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties	44	(5)
References	46	(3)
Indium Nitride (InN)	49	(18)
A. Zubrilov
Basic Parameters at 300 K	49	(2)
Band Structure and Carrier Concentration	51	(3)
Temperature Dependences	51	(2)
Dependence on Hydrostatic Pressure	53	(1)
Band Discontinuities at Heterointerfaces	53	(1)
Effective Masses	53	(1)
Donors and Acceptors	54	(1)
Electrical Properties	54	(4)
Mobility and Hall Effect	54	(2)
Transport Properties in High Electric Field	56	(1)
Impact Ionization	57	(1)
Recombination Parameters	58	(1)
Optical Properties	58	(3)
Thermal Properties	61	(2)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties	63	(4)
References	65	(2)
Boron Nitride (BN)	67	(26)
S. Rumyantsev
M. Levinshtein
A.D. Jackson
S.N. Mohammad
G.L. Harris
M.G. Spencer
M.S. Shur
Basic Parameters at 300 K	68	(2)
Band Structure and Carrier Concentration	70	(5)
Dependence on Hydrostatic Pressure	72	(1)
Effective Masses	73	(2)
Donors and Acceptors	75	(1)
Electrical Properties	75	(1)
Optical Properties	76	(4)
Thermal Properties	80	(6)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties	86	(7)
References	91	(2)
Silicon Carbide (SiC)	93	(56)
Yu. Goldberg
M. Levinshtein
S. Rumyantsev
Basic Parameters at 300 K	93	(3)
Band Structure and Carrier Concentration	96	(10)
Temperature Dependences	97	(3)
Dependence on Hydrostatic Pressure	100	(1)
Energy Gap Narrowing at High Doping Levels	101	(1)
Effective Masses	102	(2)
Donors and Acceptors	104	(2)
Electrical Properties	106	(16)
Mobility and Hall Effect	106	(5)
Transport Properties in High Electric Field	111	(3)
Impact Ionization	114	(5)
Recombination Parameters	119	(3)
Optical Properties	122	(10)
Thermal Properties	132	(6)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties	138	(11)
References	143	(6)
Silicon-Germanium (Si1-xGex)	149	(40)
F. Schaffler
Basic Parameters in Unstrained Bulk Material at 300 K	151	(3)
Band Structure and Carrier Concentration	154	(14)
Temperature Dependences	157	(3)
Dependence of Energy Gap on Hydrostatic Pressure	160	(1)
Strain-Dependent Band Discontinuity	160	(4)
Effective Masses	164	(4)
Electrical Properties	168	(5)
Mobility and Hall Effect	168	(1)
Two-Dimensional Electron Gas	169	(2)
Two-Dimensional Hole Gas	171	(2)
Optical Properties	173	(3)
Thermal Properties	176	(3)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties	179	(10)
References	186	(3)
Appendixes	189	(4)
1. Basic Physical Constants	189	(1)
2. Periodic Table of the Elements	190	(1)
3. Rectangular Coordinates for Hexagonal Crystal	191	(1)
4. The First Brillouin Zone for Wurtzite Crystal	191	(1)
5. Zinc Blende Structure	192	(1)
6. The First Brillouin Zone for Zinc Blende Crystal	192	(1)
Additional References	193