Reliability Wearout Mechanisms in Advanced CMOS Technologies

by Alvin W. Strong (IBM); Ernest Y. Wu (IBM); Rolf-Peter Vollertsen (Infineon); Jordi Sune (Universitat Autonoma de Barcelona, Spain ); Giuseppe La Rosa (IBM); Timothy D. Sullivan (IBM); Stewart E. Rauch

• ISBN13: 9780470455258
• ISBN10: 047045525X
• Format: eBook
• Copyright: 2009-10-01
• Publisher: Wiley-IEEE Press

Summary

A comprehensive treatment of all aspects of CMOS reliability wearout mechanismsThis book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers:Introduction to ReliabilityGate Dielectric ReliabilityNegative Bias Temperature InstabilityHot Carrier InjectionElectromigration ReliabilityStress VoidingChapters conclude with practical appendices that provide very basic experimental procedures for readers who are conducting reliability experiments for the first time. Reliability Wearout Mechanisms in Advanced CMOS Technologies is ideal for students and new engineers who are looking to gain a working understanding of CMOS technology reliability. It is also suitable as a professional reference for experienced circuit design engineers, device design engineers, and process engineers.

Table of Contents

Preface

Introduction

Book Philosophy

Lifetime and Acceleration Concepts

Mechanism Types

Reliability Statistics

Chi-Square and Student t Distributions

Application

Dielectric Characterization And Reliability Methodology

Introduction

Fundamentals of Insulator Physics and Characterization

Measurement of Dielectric Reliability

Fundamentals of Dielectric Breakdown Statistics

Summary and Future Trends

Dielectric Breakdown Of Gate Oxides: Physics And Experiments

Introduction

Physics of Degradation and Breakdown

Physical Models for Oxide Degradation and Breakdown

Experimental Results of Oxide Breakdown

Post-Breakdown Phenomena

Negative Bias Temperature Instabilities In Pmosfet Devices

Introduction

Considerations on NBTI Stress Configurations

Appropriate NBTI Stress Bias Dependence

Nature of the NBTI Damage

Impact of the NBTI Damage to Key pMOSFET Transistor Parameters

Physical Mechanisms Contributing to the NBTI Damage

Key Experimental Observations on the NBTI Damage

Nit Generation by Reaction-Diffusion (R-D) Processes

Hole Trapping Modeling

NBTI Dependence on CMOS Processes

NBTI Dependence on Area Scaling

Overview of Key NBTI Features

Hot Carriers

Introduction

Hot Carriers: Physical Generation and Injection Mechanisms

Hot Carrier Damage Mechanisms

HC Impact to MOSFET Characteristics

Hot Carrier Shift Models

Stress-Induced Voiding

Introduction

Theory and Model

Role of the Overlying Dielectric

Summary of Voiding in Al Metallizations

Stress Voiding in Cu Interconnects

Concluding Remarks

Electromigration

Introduction

Metallization Failure

Electromigration

General Approach to Electromigration Reliability

Thermal Considerations for Electromigration

Closing Remarks

Index

Table of Contents provided by Publisher. All Rights Reserved.