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| Preface | p. xiii |
| Materials Research Society Symposium Proceedings | p. xiv |
| Atomistic Structure and Dynamics of Steps and Islands and Their Influence on Large-Scale Aspects of Film Evolution | |
| Novel Mechanisms on the Growth Morphology of Films | p. 3 |
| Step Bunching During Si(001) Homoepitaxy Caused by the Surface Diffusion Anisotropy | p. 9 |
| Island Nucleation, Growth, Coalescence and Coarsening I | |
| Time-Dependent Capture Numbers With Repulsive Pair Interactions: Cu/Cu(111) and Ge/Si(001) | p. 17 |
| Rate Equation Theory for Island Sizes and Capture Zone Areas in Submonolayer Deposition: Realistic Treatment of Spatial Aspects of Nucleation | p. 23 |
| The Surfactant Effects of Antimony on the Formation of InAsSb Nanostructures on GaAs by Metal-Organic Chemical Vapor Deposition | p. 29 |
| Sintering of Metal(100) Homoepitaxial Islands: Kink Rounding Barriers, Modified Size Scaling, and Experimental Behavior | p. 35 |
| Nanocluster Epitaxy by Annealing: Ag on H-Terminated Si(111) Surfaces | p. 41 |
| 1. Island Nucleation, Growth, Coalescence and Coarsening II | |
| Morphological Evolution of Ag/Mica Films Grown by Pulsed Laser Deposition | p. 49 |
| Morphology Control of Pulsed-Laser Deposited Ag Quantum Dots | p. 55 |
| Atomistic Structure of Adatoms, Steps, Islands, Monolayers, and Influence on Large-Scale Aspects | |
| Bismuth-Induced Layer-by-Layer Growth in the Homoepitaxial Growth of Fe(100) | p. 63 |
| Motions of Si(100) Steps at Low Temperature: A Study by Molecular Dynamics | p. 69 |
| Phenomenological Description of Structure and Morphology | |
| Atomic Structure of Ultrathin Iron Silicide Films on Si(111): Metastable Phases and a New Template Structure | p. 77 |
| Microstructural Characterization of Porous Thin Films | p. 83 |
| Surfactant Mediated Epitaxial Growth of Co on Au(111) Surface | p. 89 |
| Characterization of Eu- and Y-Polytantalate Films Deposited by RF Diode Sputtering | p. 95 |
| Properties of Titanium Oxide Thin Film Prepared With E-Beam Evaporation | p. 101 |
| Surface Roughness Evolution in Amorphous Tantalum Oxide Films Deposited by Pulsed Reactive Sputtering | p. 107 |
| Time Evolution of the Microstructure of VO[subscript 2](B) Films Deposited on Glass by MOCVD | p. 113 |
| Stress Relaxation | |
| Morphological Instability of Solid-on-Liquid Thin Film Structures | p. 121 |
| Buckling of Thin Films on Substrates: From Straight-Sided Wrinkles to Both Worm-Like and Varicose Structures | p. 127 |
| Effects of Stress | |
| X-ray Scattering Studies of Low-T Ag(001) and Cu(001) Homoepitaxy: Vacancy Trapping and Surface Morphology Evolution | p. 135 |
| Stress Creation and Relaxation and Morphology Relaxation | |
| Experiments With In Situ Thin Film Telephone Cord Buckling Delamination Propagation | p. 143 |
| In Situ Thin Film Stress Measurements--A Path to Understanding the Structure and Morphology of Electron Beam Evaporated ZnS | p. 149 |
| In Situ Investigation of the Stress Evolution During Deposition of Ti/Al-Multilayer Films as a Function of Layer Thickness and Substrate Temperature | p. 155 |
| Atomistic Simulation Study of Misfit Strain Relaxation Mechanisms in Heteroepitaxial Islands | p. 161 |
| Film Structure and Properties | |
| Preparation of Plate-Like Bulk Beta Iron-Disilicide Crystals Using Metal to Semiconductor Phase Transition by Heat Treatment | p. 169 |
| Evaporative Deposition of Aluminum Single Crystals | p. 175 |
| Dehydrogenation and Polymerization of TiO[subscript x]H[subscript y] Films in Obtaining Anatase Coating at Low Temperature | p. 181 |
| Grain and Microstructure Evolution | |
| Quantitative Characterization of Morphological Evolution in Q = 2 Potts Model Aluminum Thin Films | p. 189 |
| Texture Evolution During Crystallization of Thin Amorphous Films | p. 195 |
| Crack Formation Due to Annealing of Al[subscript 2]O[subscript 3] Films Grown on Si(100) by MOCVD | p. 201 |
| Room Temperature Grain Growth in Sputtered Cu Films | p. 207 |
| Intermediate Annealing Behavior and Grain Growth of Al-Cu-Fe Quasicrystalline Coatings | p. 213 |
| Compositional and Structural Modulations and Quantum Dots | |
| Adatom Diffusion on Strained Si(001)-(2x1) Surface | p. 221 |
| Atomic Ordering in Self-Assembled Epitaxial II-VI and IV-VI Compound Semiconductor Quantum Dot Systems | p. 227 |
| Ge/Si(100) Island and Wetting Layer Composition | p. 233 |
| Initial Stages of InAs Quantum Dots Evolution in GaAs/AlAs Matrixes | p. 239 |
| Segregation, Surface Alloying, Composition Evolution | |
| Kinetic Modeling of Dopant and Impurity Surface Segregation During Vapor Phase Growth: Multiple Mechanism Approach | p. 247 |
| Fundamental Aspects of Electrodeposition | |
| Metal-Oxide Interfacial Evolution in Thermally Grown Oxide Films | p. 257 |
| Spontaneous Oscillations During the Electrodeposition of Gold Thin Films | p. 263 |
| Novel and Unconventional Synthesis Methods | |
| A Simple Model for the Formation of Step-Free Surfaces | p. 271 |
| STM Studies of Island Nucleation During Hyperthermal Atom Deposition | p. 279 |
| An MBE and Modeling Study of Pulsed Growth on Ge(001) | p. 285 |
| Comparison of Growth Morphology in Ge(001) Homoepitaxy Using Pulsed Laser Deposition and MBE | p. 291 |
| Energetic Beams | |
| Improvement of Surface Roughness by Ultra-Thin Film Deposition With Oxygen Cluster Ion Beam Assist Deposition | p. 299 |
| Deposition Mechanism of Oxide Thin Films Manufactured by a Focused Energetic Beam Process | p. 305 |
| Study of Surface Morphological Evolution by Cluster Ion Irradiation on Solid Targets | p. 311 |
| Suface Dynamics of GaAs Thin Film Formation by Pulsed Laser Deposition Investigated Using RHEED | p. 317 |
| Time Resolved Studies of Focused Ion Beam Induced Tungsten Deposition | p. 323 |
| Mo-Si Interface Formation by Ion Beam Sputter Deposition | p. 329 |
| Threshold Energy for Generating Damage With Cluster Ion Irradiation | p. 335 |
| Real-Time X-ray Scattering Study of Homoepitaxial Growth of SrTiO[subscript 3] by Sputtering | p. 341 |
| Novel or Unconventional Synthesis Methods or Results | |
| Large-Area Film Structure Consisted by Aggregation of Zinc Oxide Micro-Whiskers | p. 349 |
| Diamond Synthesis From Acetone Vapor and Impurity Control | p. 355 |
| Molecular-Dynamics Simulation of the Initial Period of Cluster Deposition | p. 361 |
| Facet-Facet Barrier on Surfaces: Proposal and Experimental Validation | p. 367 |
| Segregation, Adsorption, Composition Evolution | |
| Stress Evolution During Deposition and During Annealing of Ti[subscript x]Al[subscript y]-Alloy Films | p. 375 |
| Thermal Characterization and Modeling of Intermediate Phase Formation in 20/80 nm and 10/20 nm Cu/Mg Multilayers | p. 381 |
| Compositional and Structural Modulations | |
| X-ray Characterization of Nanostructured Semiconductor Short-Period Superlattices | p. 389 |
| First-Principles Calculation of the Effect of Strain on the Diffusion of Ge Adatoms on Si and Ge (001) Surfaces | p. 395 |
| Formation and Stability of Quantum Dot Structures | |
| Structural Properties of SiGe Islands: Effect of Capping | p. 403 |
| Author Index | p. 415 |
| Subject Index | p. 419 |
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