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9781558992184

Defect-Interface Interactions

by ; ;
  • ISBN13:

    9781558992184

  • ISBN10:

    1558992189

  • Format: Hardcover
  • Copyright: 1994-04-01
  • Publisher: Materials Research Society
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List Price: $31.99

Summary

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Table of Contents

Preface
Materials Research Society Symposium Proceedings
Misfit Dislocations at Metal/Ceramic Interfacesp. 3
HREM Investigation of Al-MgO Interfacep. 15
Structure-Property Relationship of Metal-Ceramic Interfaces Produced by Laser Processingp. 21
HREM Observations, Peels Analysis and Numerical Simulations of Au/Ni MBE Multilayersp. 33
Molecular Statics of a Ni/Zr Heterophase Interfacep. 39
The Nature of Oxygen-Related Polytypoids in the Aluminum Nitride-Aluminum Oxide Systemp. 45
Interfaces in Silicon Carbide Whisker and Carbon Fiber Reinforced Calcium Phosphate Compositesp. 51
The Use of Thin Film Substrates to Study Enhanced Solid-State Phase Transformationsp. 57
Observation of the Phase-Boundary Controlled Formation of NiAl[subscript 2]O[subscript 4] from a Single-Crystal NiO Thin Film and a Single-Crystal [alpha]-Al[subscript 2]O[subscript 3] Substratep. 63
Transmission Electron Microscopy Studies of a Complex Oxide Systemp. 69
Second Phases and Impurity Segregations in MgO- and NiO-Co-Doped Aluminap. 75
TEM Analysis of Interfacial Reactions Between TiWN, WN Gate Metallizations and GaAs in Mesfet Devicesp. 81
Characteristics of PdAl Schottky Contacts to n-GaAsp. 87
The Development of Solid Phase Regrowth on GaAs and Its Applicationsp. 93
Interdiffusion Enhancement in AlGaAs/GaAs Superlattices in the Presence of Carbonp. 105
Atomic Scale Interface Structure of In[subscript 0.2]Ga[subscript 0.8]As/GaAs Strained Layers Studied by Cross-Sectional Scanning Tunneling Microscopyp. 111
TEM Studies of Impurity Induced Defects in GaAs Grown by CBEp. 117
Determination of the State of Deformation in Epitaxial Layers Using High Resolution X-Ray Diffractionp. 123
TEM Investigation of CdTe/GaAs(001) Interfacesp. 129
Relationship Between Crystal Defects, Ge Outdiffusion and V/III Ratio in MOVPE Grown (001) GaAs/Gep. 135
A Novel Approach for the Production of Low Dislocation Relaxed SiGe Materialp. 141
Nucleation of Dislocations in SiGe Layersp. 147
Simulations of the Dislocation Array at Ge/Si Interfacesp. 153
Behavior of Damage in Selectively Implanted SiGe/Sip. 159
Dissociation of Misfit Dislocations in GeSi/{111}Si Interfacesp. 165
Defect Growth Interruption Phenomena Related to Impurity Atoms in Growing Multilayer Si-Si[subscript 1-x]Ge[subscript x] Systems Deposited by APCVDp. 171
Observation of Open-Ended Stacking Fault Tetrahedra in Si[subscript 0.85]Ge[subscript 0.15] Grown on V-Grooved (001) Si and Planar (111) Si Substratesp. 177
Diffusion of Ge Along Grain Boundaries During Oxidation of Polycrystalline Silicon-Germanium Filmsp. 183
Formation of Extrinsic Defects at the Amorphous-Crystalline Interface in Ion-Implanted Siliconp. 189
Microstructural Examination of Extended Crystal Defects in Silicon Selective Epitaxial Growth (SEG)p. 195
On In-Situ Study of Dislocation/Grain Boundary Interactions Using X-Ray Topography and TEMp. 203
In-Situ IMEV TEM and HREM Study of the Deformation and the Transformation of Symmetrical Tilt Grain Boundaries in Ge and Sip. 215
The Morphology of Grain Boundary Interactions with Twins in [actual symbol not reproducible]p. 227
Atomic Scale Structure and Chemistry of Interfaces by Z-Contrast Imaging and Electron Energy Loss Spectroscopy in the Stemp. 233
Atomistic Calculations and HRTEM Observations of An {001} Tilt Boundary in Rutilep. 239
Crystallite Rotation Experiments Revisited: The Contribution of Free-Surface Interactionsp. 245
A Modified Approach to the Modelling of Grain Boundary Structure in Materials with an Hexagonal Crystal Structurep. 251
A Multi-Plane Model for Defect Nucleation at Cracksp. 257
The Slip Transfer Process through Grain Boundaries in HCP Tip. 263
Migration Dynamics of a [Sigma] = 3 {112} Boundary in Aluminump. 273
Interactions of Dislocations and Deformation Twins with Interfacial Boundaries in Titanium Aluminidesp. 279
The Interaction Between Dislocations and Lamellar Grain Boundaries in PST [gamma] TiAlp. 285
Structural Evolution and Deformation in an Aluminum-Based Solid Solution Alloy with Submicron Grain Sizep. 293
Experimental Measurement of the Local Electronic Structure of Grain Boundaries in Ni[subscript 3]Alp. 299
Nearly Dislocation-Free APB Termination at Pure Grain Boundary Step Defects in Ll[subscript O] Alloysp. 305
On the Mechanism of Transformation of [gamma]-TiAJ from [actual symbol not reproducible]p. 311
Computer Simulation of Creation of Dislocations in Copper Small Crystalsp. 319
Computer Simulation of Tensile Deformation of Titanium Small Single Crystals with Stacking Faultsp. 325
Computer Simulation of Creation of Dislocations in Titanium Small Crystalsp. 331
Sans Measurements of Deuterium Trapped at Grain Boundaries in Palladiump. 339
Localized Influence of Solute on the Stacking Fault Energy of Dilute Al-Based Solid Solutionsp. 345
Growth of Grain Boundary Precipitates as a Function of Misorientation in an Al-5 WT% Cu Alloyp. 351
Grain Boundary Precipitate Density as a Function of Time and Misorientation in an Al-5 Wt% Cu Alloyp. 357
Effect of Boron and Hydrogen on the Electronic Structure of Ni[subscript 3]Alp. 363
Effect of Molybdenum on the Electronics Structure of Iron Grain Boundaries with Phosphorus and Boronp. 369
Computer Simulation of Vacancy Segregation at Antiphase Domain Boundaries During Coarseningp. 375
Interface Controlled Amorphization of Crystalline Ni/Ti Multilayersp. 381
Diffusion-Induced Grain Boundary Migration and Role of Defectsp. 387
Boron and Hydrogen in Ni[subscript 3]Al: Part II. Mechanical Testing of Bicrystalsp. 393
Defect-Solute Interactions Near Irradiated Grain Boundariesp. 399
Interface Diffusion in Solidsp. 405
Solid-Phase Epitaxy - Role of Point Defects in Amorphous Solidsp. 411
Evidence by HREM of Interfacial Modification Induced by Equilibrium Segregation in Ge(S) Bicrystalp. 417
Bias Annealing Effect on Hydrogen-Containing Au/n-Silicon Schottky Barrierp. 423
Correlation of Electric Parameters Change and Structural Changes Induced in Silicon Systems by Pulsed Magnetic Field Treatmentp. 429
Effect of Interface on Capture and Emission Processes Via Deep Centersp. 435
Transition from Inclined to In-Plane 60[degree] Misfit Dislocations in a Diffuse Interfacep. 441
An Investigation on Interconnect Via Failurep. 457
Author Indexp. 463
Subject Indexp. 465
Table of Contents provided by Blackwell. All Rights Reserved.

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