Preface | |
Materials Research Society Symposium Proceedings | |
Misfit Dislocations at Metal/Ceramic Interfaces | p. 3 |
HREM Investigation of Al-MgO Interface | p. 15 |
Structure-Property Relationship of Metal-Ceramic Interfaces Produced by Laser Processing | p. 21 |
HREM Observations, Peels Analysis and Numerical Simulations of Au/Ni MBE Multilayers | p. 33 |
Molecular Statics of a Ni/Zr Heterophase Interface | p. 39 |
The Nature of Oxygen-Related Polytypoids in the Aluminum Nitride-Aluminum Oxide System | p. 45 |
Interfaces in Silicon Carbide Whisker and Carbon Fiber Reinforced Calcium Phosphate Composites | p. 51 |
The Use of Thin Film Substrates to Study Enhanced Solid-State Phase Transformations | p. 57 |
Observation of the Phase-Boundary Controlled Formation of NiAl[subscript 2]O[subscript 4] from a Single-Crystal NiO Thin Film and a Single-Crystal [alpha]-Al[subscript 2]O[subscript 3] Substrate | p. 63 |
Transmission Electron Microscopy Studies of a Complex Oxide System | p. 69 |
Second Phases and Impurity Segregations in MgO- and NiO-Co-Doped Alumina | p. 75 |
TEM Analysis of Interfacial Reactions Between TiWN, WN Gate Metallizations and GaAs in Mesfet Devices | p. 81 |
Characteristics of PdAl Schottky Contacts to n-GaAs | p. 87 |
The Development of Solid Phase Regrowth on GaAs and Its Applications | p. 93 |
Interdiffusion Enhancement in AlGaAs/GaAs Superlattices in the Presence of Carbon | p. 105 |
Atomic Scale Interface Structure of In[subscript 0.2]Ga[subscript 0.8]As/GaAs Strained Layers Studied by Cross-Sectional Scanning Tunneling Microscopy | p. 111 |
TEM Studies of Impurity Induced Defects in GaAs Grown by CBE | p. 117 |
Determination of the State of Deformation in Epitaxial Layers Using High Resolution X-Ray Diffraction | p. 123 |
TEM Investigation of CdTe/GaAs(001) Interfaces | p. 129 |
Relationship Between Crystal Defects, Ge Outdiffusion and V/III Ratio in MOVPE Grown (001) GaAs/Ge | p. 135 |
A Novel Approach for the Production of Low Dislocation Relaxed SiGe Material | p. 141 |
Nucleation of Dislocations in SiGe Layers | p. 147 |
Simulations of the Dislocation Array at Ge/Si Interfaces | p. 153 |
Behavior of Damage in Selectively Implanted SiGe/Si | p. 159 |
Dissociation of Misfit Dislocations in GeSi/{111}Si Interfaces | p. 165 |
Defect Growth Interruption Phenomena Related to Impurity Atoms in Growing Multilayer Si-Si[subscript 1-x]Ge[subscript x] Systems Deposited by APCVD | p. 171 |
Observation of Open-Ended Stacking Fault Tetrahedra in Si[subscript 0.85]Ge[subscript 0.15] Grown on V-Grooved (001) Si and Planar (111) Si Substrates | p. 177 |
Diffusion of Ge Along Grain Boundaries During Oxidation of Polycrystalline Silicon-Germanium Films | p. 183 |
Formation of Extrinsic Defects at the Amorphous-Crystalline Interface in Ion-Implanted Silicon | p. 189 |
Microstructural Examination of Extended Crystal Defects in Silicon Selective Epitaxial Growth (SEG) | p. 195 |
On In-Situ Study of Dislocation/Grain Boundary Interactions Using X-Ray Topography and TEM | p. 203 |
In-Situ IMEV TEM and HREM Study of the Deformation and the Transformation of Symmetrical Tilt Grain Boundaries in Ge and Si | p. 215 |
The Morphology of Grain Boundary Interactions with Twins in [actual symbol not reproducible] | p. 227 |
Atomic Scale Structure and Chemistry of Interfaces by Z-Contrast Imaging and Electron Energy Loss Spectroscopy in the Stem | p. 233 |
Atomistic Calculations and HRTEM Observations of An {001} Tilt Boundary in Rutile | p. 239 |
Crystallite Rotation Experiments Revisited: The Contribution of Free-Surface Interactions | p. 245 |
A Modified Approach to the Modelling of Grain Boundary Structure in Materials with an Hexagonal Crystal Structure | p. 251 |
A Multi-Plane Model for Defect Nucleation at Cracks | p. 257 |
The Slip Transfer Process through Grain Boundaries in HCP Ti | p. 263 |
Migration Dynamics of a [Sigma] = 3 {112} Boundary in Aluminum | p. 273 |
Interactions of Dislocations and Deformation Twins with Interfacial Boundaries in Titanium Aluminides | p. 279 |
The Interaction Between Dislocations and Lamellar Grain Boundaries in PST [gamma] TiAl | p. 285 |
Structural Evolution and Deformation in an Aluminum-Based Solid Solution Alloy with Submicron Grain Size | p. 293 |
Experimental Measurement of the Local Electronic Structure of Grain Boundaries in Ni[subscript 3]Al | p. 299 |
Nearly Dislocation-Free APB Termination at Pure Grain Boundary Step Defects in Ll[subscript O] Alloys | p. 305 |
On the Mechanism of Transformation of [gamma]-TiAJ from [actual symbol not reproducible] | p. 311 |
Computer Simulation of Creation of Dislocations in Copper Small Crystals | p. 319 |
Computer Simulation of Tensile Deformation of Titanium Small Single Crystals with Stacking Faults | p. 325 |
Computer Simulation of Creation of Dislocations in Titanium Small Crystals | p. 331 |
Sans Measurements of Deuterium Trapped at Grain Boundaries in Palladium | p. 339 |
Localized Influence of Solute on the Stacking Fault Energy of Dilute Al-Based Solid Solutions | p. 345 |
Growth of Grain Boundary Precipitates as a Function of Misorientation in an Al-5 WT% Cu Alloy | p. 351 |
Grain Boundary Precipitate Density as a Function of Time and Misorientation in an Al-5 Wt% Cu Alloy | p. 357 |
Effect of Boron and Hydrogen on the Electronic Structure of Ni[subscript 3]Al | p. 363 |
Effect of Molybdenum on the Electronics Structure of Iron Grain Boundaries with Phosphorus and Boron | p. 369 |
Computer Simulation of Vacancy Segregation at Antiphase Domain Boundaries During Coarsening | p. 375 |
Interface Controlled Amorphization of Crystalline Ni/Ti Multilayers | p. 381 |
Diffusion-Induced Grain Boundary Migration and Role of Defects | p. 387 |
Boron and Hydrogen in Ni[subscript 3]Al: Part II. Mechanical Testing of Bicrystals | p. 393 |
Defect-Solute Interactions Near Irradiated Grain Boundaries | p. 399 |
Interface Diffusion in Solids | p. 405 |
Solid-Phase Epitaxy - Role of Point Defects in Amorphous Solids | p. 411 |
Evidence by HREM of Interfacial Modification Induced by Equilibrium Segregation in Ge(S) Bicrystal | p. 417 |
Bias Annealing Effect on Hydrogen-Containing Au/n-Silicon Schottky Barrier | p. 423 |
Correlation of Electric Parameters Change and Structural Changes Induced in Silicon Systems by Pulsed Magnetic Field Treatment | p. 429 |
Effect of Interface on Capture and Emission Processes Via Deep Centers | p. 435 |
Transition from Inclined to In-Plane 60[degree] Misfit Dislocations in a Diffuse Interface | p. 441 |
An Investigation on Interconnect Via Failure | p. 457 |
Author Index | p. 463 |
Subject Index | p. 465 |
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