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| Deep ultraviolet light emitting diodes with emission below 300 nm | p. 3 |
| Short-period AlGaN based superlattices for deep UV light emitting diodes grown by gas source molecular beam epitaxy | p. 13 |
| Towards a novel broadband spectrally dynamic solid state light source | p. 19 |
| Stress and microstructure evolution in compositionally graded Al[subscript 1-x]Ga[subscript x]N buffer layers for GaN growth on Si | p. 27 |
| X-ray standing wave investigations of Si dopant incorporation in GaN | p. 35 |
| The use of cathodoluminescence during molecular beam epitaxy growth of gallium nitride to determine substrate temperature | p. 43 |
| Scanning tunneling microscopy study of Cr-doped GaN surface grown by RF plasma molecular beam epitaxy | p. 49 |
| In situ investigation of surface stoichiometry during InGaN and GaN growth by plasma-assisted molecular beam epitaxy using RHEED-TRAXS | p. 55 |
| High power AlGaN/GaN schottky barrier diode with 1000 V operation | p. 63 |
| Effects of the high-refractive index SiN[subscript x] passivation on AlGaN/GaN HFETs with a very low gate-leakage current | p. 69 |
| Properties of InN grown by high-pressure CVD | p. 77 |
| Polarity dependence of in-rich InGaN and InN/InGaN MQWs | p. 83 |
| Influence of nitrogen species on InN grown by PAMBE | p. 89 |
| Carrier recombination, relaxation, and transport dynamics in InN | p. 95 |
| Electron transport properties of InN | p. 105 |
| III-V epitaxial growth for nitride devices | p. 113 |
| Structural, optical, and magnetic behavior of in situ doped, MOCVD-grown Ga[subscript 1-x]Mn[subscript x]N epilayers and heterostructures | p. 125 |
| Fe-centers in GaN as candidates for spintronics applications | p. 131 |
| Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate | p. 137 |
| Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (10-1-1) GaN templates | p. 143 |
| InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates | p. 151 |
| Modification of InN properties by interactions with hydrogen and nitrogen | p. 155 |
| Temperature dependence of transport properties of InN films | p. 161 |
| Reliability and degradation modes of 280 nm Deep UV LEDs on sapphire | p. 169 |
| Origins of parasitic emissions from 353 nm AlGaN-based UV LEDs over SiC substrates | p. 175 |
| Comparison of the electroluminescence of blue and deep-UV light-emitting diodes at elevated temperatures | p. 181 |
| Analysis of high-power packages for white-light-emitting diode lamps with remote phosphor | p. 187 |
| Al mole fraction dependence of deep levels in AlGaN/GaN-HEMT structures estimated by CV profiling | p. 195 |
| Epitaxal growth of InGaN quantum dots grown by MOVPE : effect of capping process on the structural and optical properties | p. 203 |
| The mean inner potential of GaN measured from nanowires using off-axis electron holography | p. 209 |
| Raman scattering of self-assembled gallium nitride nanorods synthesized by plasma-assisted molecular beam epitaxy | p. 215 |
| A non-thermal plasma reactor for the synthesis of gallium nitride nanocrystals | p. 221 |
| Opto-electronic simulation of GaN nanowire lasers | p. 225 |
| Morphological study of InN films and nanorods grown by H-MOVPE | p. 231 |
| Analysis of the quantum efficiency of GaInN/GaN light emitting diodes in the range of 390-580 nm | p. 239 |
| Visible light-emitting diodes grown by plasma assisted molecular beam epitaxy on hydride vapor-phase epitaxy GaN templates and the development of dichromatic (phosphorless) white LEDs | p. 245 |
| Electrical characterization of blue light emitting diodes as a function of temperature | p. 251 |
| Study of laser-debonded GaN light emitting diodes | p. 257 |
| Role of deep levels in DC current aging of GaN/InGaN light-emitting diodes studied by capacitance and photocurrent spectroscopy | p. 263 |
| 3D simulations on realistic GaN-based light-emitting diodes | p. 269 |
| Application of aluminum nitride thin film for micromachined ultrasonic transducers | p. 277 |
| Mechanism of current leakage in Ni schottky diodes on cubic GaN and Al[subscript x]Ga[subscript 1-x]N epilayers | p. 283 |
| Simulation of self-heating and temperature effect in GaN-based metal-semiconductor field-effect transistor | p. 289 |
| Double-ion-implanted GaN MESFETs with extremely low source/drain resistance | p. 295 |
| Electrical domains and sub-millimeter signal generation in AlGaN/GaN superlattices | p. 301 |
| Growth, processing and characterization of GaN/AlGaN/SiC vertical n-p diodes | p. 307 |
| Fabrication and device characteristics of bulk GaN-based schottky diodes | p. 313 |
| Reduction of base access resistance in AlGaN/GaN heterojunction bipolar transistors using GaInN base cap layer and selective epitaxial growth | p. 319 |
| Design and development of MBE grown AlGaN/GaN HEMT devices on SiC substrates for RF applications | p. 325 |
| Fabrication and electrical characteristics of Ti/Al ohmic contact to Si[superscript +] implanted GaN | p. 337 |
| W[subscript 2]B based high thermal stability ohmic contacts to n-GaN | p. 341 |
| Anti-diffusion barriers for gold-based metallization to p-GaN | p. 351 |
| Substrate influence on the high-temperature annealing behavior of GaN:Si vs. sapphire | p. 357 |
| Planarization of GaN by the etch-back method | p. 363 |
| GaN-based light emitting diode with transparent nanoparticles-embedded p-Ohmic electrode | p. 369 |
| III-nitride epitaxial material on large-diameter semi-insulating SiC substrates for high-power RF transistors | p. 377 |
| Normally off-mode AlGaN/GaN heterostructure field effect transistor using p-Type gate contact | p. 383 |
| Flip-chip mounting for improved thermal management of AlGaN/GaN HFETs | p. 389 |
| Low-temperature selected area re-growth of ohmic contacts for III-N FETs | p. 397 |
| Perturbation of charges in AlGaN/GaN heterostructures studied by nanoscale capacitance-voltage technique | p. 405 |
| Weak antilocalization in polarization-doped AlGaN/GaN heterostructures | p. 411 |
| Polarization-induced 3-dimensional electron slabs in graded AlGaN layers | p. 417 |
| Highly doped p-Type a-Plane GaN grown on r-Plane sapphire substrate | p. 423 |
| ZnCdO/ZnMgO and ZnO/AlGaN heterostructures for UV and visible light emitters | p. 429 |
| MgZnO nanocrystallites : photoluminescence and phonon properties | p. 439 |
| Plasma-assisted MOCVD growth of ZnO thin films | p. 445 |
| Metal organic chemical vapor deposition of ZnO | p. 451 |
| Characteristics of a phosphorus-doped p-Type ZnO film by MBE | p. 457 |
| A semipolar (10-1-3) InGaN/GaN green light emitting diode | p. 465 |
| Charge profiling of the p-AlGaN electron blocking layer in AlGaInN light emitting diode structures | p. 471 |
| Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN | p. 479 |
| Room temperature strong coupling in low finesse GaN microcavities | p. 485 |
| Optical properties of GaN photonic crystal membrane nanocavities at blue wavelengths | p. 491 |
| Growth of large AlN single crystals along the [0001] direction | p. 499 |
| Oxidation of aluminum nitride for defect characterization | p. 505 |
| High quality GaN layers grown on slightly miscut sapphire wafers | p. 511 |
| Structural analysis of ELO-GaN grown on sapphire using the X-ray micro-beam of an 8-GeV storage ring | p. 519 |
| Intersecting basal plane and prismatic stacking fault structures in GaN/AlN epilayers on on-axis and off-cut 6H-SiC substrates | p. 531 |
| Dislocation reduction and structural properties of GaN layers grown on N[superscript +]-implanted AlN/Si (111) substrates | p. 537 |
| Oxygen segregation to nanopipes in gallium nitride | p. 543 |
| Polarized photoluminescence study on AlGaN of AlGaN/GaN heterostructure | p. 551 |
| Structural and optical properties of MOCVD InAlN epilayers | p. 557 |
| Surface recombination and vacuum/GaN/AlGaN surface quantum wells | p. 563 |
| Cu induced optical transitions in MOCVD grown Cu doped GaN | p. 569 |
| Effects of GaN passivation with SiO[subscript 2] and SiN[subscript x] studied by photoluminescence and surface potential electric force microscopy | p. 575 |
| Refractive indices of A-plane GaN thin films on R-plane sapphire | p. 581 |
| High quantum efficiency of photoluminescence in GaN and ZnO | p. 587 |
| Photoluminescence in wurtzite GaN containing carbon | p. 593 |
| Characterization of the blue emission of Tm/Er co-implanted GaN | p. 599 |
| Correlation between resistivity and yellow luminescence intensity of GaN layers grown by MOCVD | p. 605 |
| Influence of the annealing ambient on structural and optical properties of rare Earth implanted GaN | p. 611 |
| Donor-like deep level defects in GaN characterized by double-correlation deep level transient spectroscopy | p. 619 |
| A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN | p. 625 |
| SiH[subscript 4] exposure of GaN surfaces : a useful tool for highlighting dislocations | p. 631 |
| Misfit dislocations in green-emitting InGaN/GaN quantum well structures | p. 639 |
| Table of Contents provided by Blackwell. All Rights Reserved. |
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