Discusses Crystal Growth Theory & Simulations, Growth Kinetics, Observations of Growth Surfaces & Interfaces, Mechanisms of Heteroepitaxy, and Crystal Growth & Mechanisms in Complex Systems.

Preface

v

PART I. Crystal Growth Theory and Simulations

1

(14)

Thermodynamic vs. kinetic critical nucleus and the reversible work of nucleus formation

3

(16)

K. Nishioka

The terrace-step-kink approach and the capillary-wave approach to fluctuation properties of vicinal surfaces

19

(12)

T. Yamamoto

N. Akutsu

Y. Akutsu

Fluctuation and morphological instability of steps in a surface diffusion field

31

(16)

M. Uwaha

Pattern formation of a crystal growing in a diffusion field

47

(14)

Y. Saito

Step structures of Si(111) vicinal surfaces

61

(14)

A. Natori

Step growth mechanism on (001) surfaces of diamond structure crystals

75

(14)

M. Tsuda

M. Hata

Monte Carlo simulation of MBE growth

89

(12)

T. Irisawa

Y. Arima

Crystal growth kinetics on stepped surface by the path probability method

101

(14)

K. Wada

H. Ohmi

PART II. Growth Kinetics

115

(130)

Inter-surface diffusion of cation incorporation in MBE of GaAs and InAs

117

(14)

T. Nishinaga

X.Q. Shen

Study of surface chemical reactions in GaAs atomic layer epitaxy by in situ monitoring methods

131

(18)

A. Koukitu

Surface kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

149

(14)

H. Ohmo

Atomic ordering in epitaxial alloy semiconductors: from the discoveries to the physical understanding

163

(22)

H. Nakayama

T. Kita

T. Nishino

Monte Carlo simulation of microstructures in ordered III-V semiconductor alloys

185

(18)

N. Kuwano

K. Oki

Control of rotational twins on heterointerface of fluoride and semiconductors

203

(10)

K. Tsutsui

S. Ohmi

K. Kawasaki

N.S. Sokolov

Growth of Ag crystallites on Mo(110) substrate observed by "in-situ" SEM

213

(10)

Y. Gotoh

A. Horii

H. Kawanowa

M. Kamei

H. Yumoto

T. Gonda

Induction time of electrical nucleation in supercooled sodium acetate trihydrate aqeous solution

223

(12)

Y. Iba

T. Ohachi

Growth mechanism of smoke particles

235

(10)

C. Kaito

S. Kimura

Y. Saito

PART III. Observations of Growth Surface and Interface

245

(134)

Thermally oxidized layers on Si-wafers--Surface X-ray scattering and field ionmicroscopy

247

(20)

J. Harada

I. Takahashi

T. Shimura

M. Umeno

Atom exchange process at the growth front in OMVPE revealed by X-ray CTR scattering measurement

267

(12)

Y. Takeda

M. Tabuchi

Surface structures during silicon growth on an Si(111) surface

279

(14)

A. Ichimiya

H. Nakahara

Y. Tanaka

REM studies of surfactant-mediated epitaxy

293

(16)

H. Minoda

K. Yagi

Oscillations of the intensity of scattered energetic ions from growing surface

309

(14)

K. Nakajima

Y. Fujii

K. Narumi

K. Kimura

M. Mannami

Scanning tunneling microscopy study of solid phase epitaxy processes on the Si(001)-2x1 surface

323

(14)

T. Yao

T. Komura

K. Uesugi

M. Yoshimura

Crystal growth of polymers in thin films

337

(12)

K. Izumi

Gan Ping

M. Hashimoto

A. Toda

H. Miyaji

Y. Miyamoto

Y. Nakagawa

Crystal growth and control of molecular orientation and polymorphism in physical vapor deposition of long-chain compounds

349

(16)

K. Sato

H. Takiguchi

S. Ueno

J. Yano

K. Yase

Polymer crystallization approached from a new view point of chain sliding diffusion

365

(14)

M. Hikosaka

PART IV. Mechanisms of Heteroepitaxy

379

(120)

Initial growth layer, island formation, and critical thickness of InAs heteroepitaxy on GaAs substrate

381

(18)

A. Sasaki

Effects of buffer layers in heteroepitaxy of gallium nitride

399

(16)

K. Hiramatsu

T. Detchprohm

H. Amano

I. Akasaki

Growth processes in the heteroepitaxy of Ge and Si1-xGex on Si substrates using gas-source molecular beam epitaxy

415

(14)

Y. Yasuda

H. Ikeda

S. Zaima

Crystal growth mechanisms in III-V/Si heteroepitaxy

429

(18)

T. Soga

M. Umeno

Atomic layer epitaxy of GaAs, AlAs and GaN using GaCl3 and AlCl3

447

(12)

F. Hasegawa

Surface diffusion processes of Ga and Al in MBE--formation of 10-nm scale GaAs ridge structures

459

(14)

T. Noda

S. Koshiba

Y. Nakamura

Y. Nagamune

H. Sakaki

Heteroepitaxy of cadmium telluride on sapphire

473

(12)

M. Kasuga

D. Kodama

H. Hagiwara

K. Kagami

K. Yano

A. Shimizu

Formation of strain-free heteroepitaxial structures by annealing under ultrahigh pressure

485

(14)

H. Ishiwara

T. Hoshino

PART V. Crystal Growth and Mechanism of Complex Systems

499

(94)

Growth mechanism of oxide superconductor cyrstals

501

(14)

H. Takei

An atomic level analysis of crystal growth mechanism in complex systems by means of nano-optical microscopy and AFM

515

(16)

H. Komatsu

S. Miyashita

T. Nakada

G. Sazaki

A.A. Chernov

A comprehensive treatise on crystal growth from aqueous solutions

531

(16)

T. Ogawa

Crystallization of sol-gel derived ferroelectric thin films with preferred orientation

547

(12)

S. Hirano

T. Yogo

W. Sakamoto

Anisotropy in microscopic structures of ice-water and ice-vapor interfaces and its relation to growth kinetics

559

(16)

Y. Furukawa

H. Nada

Growth of InGaSbBi bulk crystals on InSb seeds and rapid permeation of Ga into InSb during growth

575

(18)

M. Kumagawa

Y. Hayakawa

Subject index

593

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Advances in the Understanding of Crystal Growth Mechanisms

9780444825049

0444825045

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