Semiconductor Device Physics and Design

by Mishra, Umesh K.; Singh, Jasprit

• ISBN13: 9781402064807
• ISBN10: 1402064802
• Format: Hardcover
• Copyright: 2007-12-04
• Publisher: Springer Verlag

Summary

Over the last few years one of the most exciting new entries in device engineering has been the GaN based devices that provide new possibilities for lighting, displays and wireless communications. New physics based on polar charges and polar interfaces have become as important as a result of the nitrides. For students / engineers to be able to participate in this a broad understanding of physics, materials properties and device concepts need to be understood. It is important to have a textbook that teaches students and practicing engineers about all these areas in a coherent manner. While this is an immense challenge we have attempted to do so in this textbook by judiciously selecting topics which provide depth while simultaneously providing the basis for understanding the ever expanding breadth of device physics. In Semiconductor Device Physics and Design the authors start out with basic physics concepts including the physics behind polar heterostructures and strained heterostructures. They then discuss the important devices ranging from p-n diodes to bipolar and field effect devices. An important distinction users will find is the discussion on interrelated device parameters on system function. For example, how much gain is needed in a transistor, what kind of device characteristics are needed. Not surprisingly the needs depend on the applications. The specifications of transistors employed in A/D and D/A Converters will differ from those in the amplifier of a cell phone. Similarly the diodes in a laptop will place different requirements on the device engineer than diodes placed in a mixer circuit. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.

Author Biography

Dr. Umesh K. Mishra is Professor at UC Santa Barbara in the Department of Electrical and Computer Engineering. His areas of focus include: Electronics and Photonics: high-speed transistors, semiconductor device physics, quantum electronics, optical control, design and fabrication of millimeter-wave devices, in situation processing and integration techniques.  Professor Mishra joined the College's ECE Department in 1990 from the Department of Electrical and Computer Engineering at North Carolina State University. A recognized leader in the area of high-speed field effect transistors, Dr. Mishra has made major contributions at every laboratory and academic institution for which he has worked, including: Hughes Research Laboratories in Malibu, California; the University of Michigan at Ann Arbor; and General Electric, Syracuse, New York. His current research areas attempt to develop an understanding of novel materials and extend them into applications. He is the Director of the AFOSR PRET Center for Non-Stoichiometric Semiconductors and of the ONR MURI Center (IMPACT), which relates to the application of SiC and GaN based transistors for power amplification. In 1989 Dr. Mishra received the Presidential Young Investigator Award from the National Science Foundation. In 1992 he received the Young Scientist of the Year Award from the International Symposium on GaAs and Related Compounds. He was elected as a Fellow of IEEE in 1995.Jasprit Singh joined the University of Michigan, Ann Arbor, in 1985 and he is Professor in the Electrical Engineering and Computer Science department.

Table of Contents

Structural Properties of Semiconductors	p. 1
Electronic levels in semiconductors	p. 28
Charge transport in materials	p. 92
Junctions in Semiconductors: P-N Diodes	p. 146
Semiconductor Junctions	p. 216
Bipolar Junction Transistors	p. 246
Temporal Response Of Diodes and Bipolar Transistors	p. 304
Field Effect Transistors	p. 356
Field Effect Transistors: MOSFET	p. 433
Coherent Transport and Mesoscopic Devices	p. 489
List of Symbols	p. 511
Boltzmann Transport Theory	p. 517
Density of States	p. 529
Important Properties of Semiconductors	p. 535
Beyond the Depletion Approximation	p. 544
Design of Graded Heterojunctions for Bipolar Transistors	p. 548
Index	p. 552
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