Semiconductors and Semimetals: Intersubband Transitions in Quantum Wells: Physics and Device Applications I

by Liu, H. C.; Capasso, F.

• ISBN13: 9780127521718
• ISBN10: 0127521712
• Format: Hardcover
• Copyright: 1999-11-01
• Publisher: Elsevier Science Serials

Summary

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Table of Contents

Preface	xi
List of Contributors	xiii
The Basic Physics of Intersubband Transitions	1	(100)
Manfred Helm
Introduction	1	(4)
The Intersubband Absorption Coefficient	5	(9)
The Symmetric Quantum Well	14	(5)
Experimental Geometries and Their Electromagnetics	19	(7)
Asymmetric Quantum Wells	26	(6)
Multiquantum Wells and Superlattices	32	(7)
Nonparabolicity and Many-Body Effects	39	(15)
Nonparabolicity	40	(2)
Self-Consistent Coulomb Potential	42	(3)
Many-Body Effects on the energy (Exchange and Correlation)	45	(2)
Collective Effects on the Absorption (Depolarization and Exciton Shift)	47	(7)
Mechanisms for In-Plane Absorption	54	(5)
Indirect-Gap Semiconductors	54	(2)
Spatial Variation of the Effective Mass	56	(1)
Coupling to the Valence Band	57	(2)
Intersubband Absorption in the Valence Band	59	(14)
Line Broadening and Relaxation	73	(7)
Other Phenomena Related to Intersubband Transitions	80	(10)
Magnetic-Field Effects	80	(4)
Parabolic Quantum Wells	84	(2)
Impurities	86	(2)
Photon Drag Effect	88	(2)
Concluding Remarks and Outlook	90	(11)
References	91	(10)
Quantum Interference Effects in Intersubband Transitions	101	(28)
Jerome Faist
Carlo Sirtori
Federico Capasso
Loren N. Pfeiffer
Ken W. West
Deborah L. Sivco
Alfred Y. Cho
Introduction	101	(3)
Experimental Setup	104	(1)
Bound State Above a Quantum Well through Electron Wave Interference	104	(4)
Quantum Interference in a Coupled-Well System	108	(4)
Fano Interference in Intersubband Absorption	112	(4)
Control of Quantum Interference by Tunneling to a Continuum	116	(13)
Absorption Experiments	118	(4)
Emission Experiments	122	(5)
References	127	(2)
Quantum Well Infrared Photodetector Physics and Novel Devices	129	(68)
H. C. Liu
Introduction	129	(8)
Background	129	(3)
Simple Description of Intersubband Transition	132	(3)
Wavelengths Covered by GaAs-Based Structures	135	(2)
Detector Physics	137	(32)
Dark Current	137	(13)
Photocurrent	150	(10)
Detector Performance	160	(7)
Design of an Optimized Detector	167	(2)
Novel Structures and Devices	169	(19)
Multicolor and Multispectral Detectors	169	(7)
High-Frequency Detectors	176	(7)
Integration with LEDs	183	(5)
Conclusions	188	(9)
Concluding Remarks	188	(2)
List of Symbols	190	(3)
References	193	(4)
Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays	197	(86)
S. D. Gunapala
S. V. Bandara
Introduction	198	(3)
Comparison of Various Types of QWIPs	201	(19)
n-Doped Bound-to-Bound QWIPs	201	(1)
n-Doped Bound-to-Continuum QWIPs	202	(1)
n-Doped Bound-to-Quasibound QWIPs	203	(2)
n-Doped Broadband QWIPs	205	(1)
n-Doped Bound-to-Bound Miniband QWIPs	206	(1)
n-Doped Bound-to-Continuum Miniband QWIPs	207	(1)
n-Doped Bound-to-Miniband QWIPs	208	(1)
n-Doped Asymmetrical GaAs-AlxGa1-xAs QWIPs	209	(1)
p-Doped QWIPs	210	(1)
Single-Quantum-Well Infrared Photodetectors	211	(1)
Indirect Bandgap QWIPs	212	(1)
n-Doped In0.53 Ga0.47As-In0.52Al0.48As QWIPs	213	(1)
n-Doped In0.53Ga0.47As-InP QWIPs	214	(1)
InGaAsP Quaternary QWIPs	215	(1)
n-Doped GaAs--Ga0.5In0.5P QWIPs	216	(1)
n-Doped GaAs-Al0.5In0.5P QWIPs	217	(1)
n-Doped In0.15Ga0.85As--GaAs QWIPs	217	(1)
p-Doped In0.53Ga0.47As--InP QWIPs	218	(2)
Figures of Merit	220	(17)
Absorption Spectra	221	(1)
Dark Current	222	(3)
Responsivity	225	(3)
Dark Current Noise	228	(1)
Noise Gain and Photoconductive Gain	229	(3)
Quantum Efficiency	232	(2)
Detectivity	234	(3)
Light Coupling	237	(9)
Random Reflectors	238	(1)
Two-Dimensional Periodic Gratings	239	(1)
Corrugated Structure	240	(2)
Microlenses	242	(4)
Imaging Focal Plane Arrays	246	(24)
Effect of Nonuniformity	246	(3)
128 x 128 VLWIR Imaging Camera	249	(2)
256 x 256 LWIR Imaging Camera	251	(3)
640 x 486 LWIR Imaging Camera	254	(6)
Dualband (MWIR and LWIR) Detectors	260	(3)
Dualband (LWIR and VLWIR) Detectors	263	(1)
High-Performance QWIPs for Low-Background Applications	264	(3)
Broadband QWIPs for Thermal Infrared Imaging Spectrometers	267	(3)
Applications	270	(5)
Fire Fighting	270	(1)
Volcanology	271	(1)
Medicine	271	(2)
Defense	273	(1)
Astronomy	274	(1)
Summary	275	(8)
References	278	(5)
Index	283	(8)
Contents of Volumes in fthis Series	291