Si Front-End Processing--Physics and Technology of Dopant-Defect Interactions Vol. 568 : Materials Research Society Symposium Proceedings

by Gossmann, Hans-Joachim L.

• ISBN13: 9781558994751
• ISBN10: 1558994750
• Edition: 1st
• Format: Hardcover
• Copyright: 1999-09-01
• Publisher: CAMBRIDGE UNIVERSITY PRESS
• More Book Details

Summary

Electrical device parameters are largely set by the three-dimensional dopant profiles created during front-end processing. Ion implantation, silicidation and annealing treatments in various ambients influence the Si native point-defect populations in characteristic ways, so that the final dopant profile of a device is the result of complex interactions between dopant atoms, Si point defects and the various interfaces. These interactions can no longer be assumed to be at equilibrium and one-dimensional. This makes computer-aided technology development imperative, requiring accurate, truly predictive, physics-based process simulation tools. The reliability of these tools depends, in turn, on data from laboratory-scale experiments to motivate and validate the physical models. This book reviews developments in experiment and modelling, and identifies key issues for future research. It broadens the focus of earlier symposia from strictly TCAD issues, to include sections on 2-D profiling, SiGe and nitrogen, and by including a joint session with the 'Advanced Semiconductor Wafer Engineering' symposium titled Mechanisms of Point-Defect Interaction and Diffusion.

Table of Contents

Preface
Acknowledgments
Temperature- and Time-Dependence of Boron-Enhanced Diffusion from Evaporated- and Ultra-Low Energy Ion-Implanted Layers	p. 3
Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants	p. 9
Sub-nm Screening Layer Approach for Ultra-Shallow Junction Formation	p. 15
Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects	p. 19
Shallow Boron Implant Activation	p. 31
Sub-30 nm Abrupt P[superscript +] Junction Formation With Ge Preamorphization and High Energy Si Co-Implantation	p. 37
Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation	p. 43
Decaborane as Ion Source Material for Boron Implantation	p. 49
Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants	p. 55
Fabrication of Shallow Junctions With Conventional Furnace Equipment by Using Silicon Preimplants	p. 65
Comparison of Ultra-Low-Energy Ion Implantation of Boron and BF[subscript 2]	p. 71
Defects and Diffusion in Silicon An Overview	p. 79
Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon	p. 91
Experimental Study of Self-Diffusion in Silicon Using Isotopically Enriched Structures	p. 97
The Effect of Grown-in Point Defects on Sb Diffusion in MBE-Grown Si and SiGe	p. 103
The Influence of Damage and Dopant on the Blister Formation in Hydrogen Implanted Silicon	p. 109
Sensitivity of Electrically Active Defect Spectra to Processing Conditions in MeV Heavy Ion Implanted Silicon	p. 115
Modelling of {311} Defects	p. 123
Atomistic Simulations of Damage Evolution in Silicon	p. 135
On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion	p. 141
First-Principles Study of Vacancy-Assisted As Diffusion in Silicon	p. 147
Dopant Segregation to {311} Defects During Low-Temperature Annealing	p. 155
Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion	p. 163
Arsenic Trapping and its Effect on Enhanced Diffusion	p. 169
Transient Enhanced Diffusion of Phosphorus and Defect Evolution in P[superscript +] Implanted Si	p. 175
Quantitative Measurement of Reduction of Phosphorus Diffusion by Substitutional Carbon Incorporation	p. 181
In Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon	p. 187
Transient Diffusion Effects of Sb and B in Si Induced by Medium- and High-Energy Implants of Si[superscript +] and As[superscript +] Ions	p. 193
Effect of Extended Defects on the Enhanced Diffusion of Phosphorus Implanted Silicon	p. 199
Transient Enhanced Diffusion and Dose Loss of Indium in Silicon	p. 205
Interface Interstitial Recombination Rate and the Reverse Short Channel Effect	p. 213
Relative Stability of Perfect and Faulted Dislocation Loops in Silicon	p. 219
Effect of the Oxidation of a Silicide Layer on Dopant Diffusion in the Underlying Silicon	p. 225
Two-Dimensional Dopant Diffusion Study Using Scanning Capacitance Microscopy	p. 233
Nondestructive Profile Measurements of Annealed Shallow Implants	p. 239
Mechanical Stress Characterization of Shallow Trench Isolation by Kelvin Probe Force Microscopy	p. 245
Diffusion Mechanisms in SiGe Alloys	p. 253
Phosphorus Diffusion From Doped Si[subscript 1-x]Ge[subscript x] Films Into Silicon	p. 265
Diffusion of Phosphorus in Strained Si/SiGe/Si Heterostructures	p. 271
Nitrogen Implantation and Diffusion in Silicon	p. 277
Experimental Observations of the Redistribution of Implanted Nitrogen at the Si-SiO[subscript 2] Interface During RTA Processing	p. 283
Estimation of the Number of Injected Interstitial Atoms During Nitrous Oxidation of Silicon	p. 289
Author Index	p. 295
Subject Index	p. 297
Table of Contents provided by Blackwell. All Rights Reserved.