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Growth, Defects, and Novel Applications | |
Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution | |
Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds | |
Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique | |
Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects | |
Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches | |
EPR Identification of Intrinsic Defects in 4H-SiC | |
Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide | |
Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC | |
Characterization of defects in silicon carbide by Raman spectroscopy | |
Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation | |
Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers | |
Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation | |
Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation | |
Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors | |
Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems | |
Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces | |
Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS | |
Epitaxial Graphene: an new Material | |
Density Functional Study of Graphene Overlayers on SiC | |
Power Devices and Sensors | |
Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts | |
Reliability aspects of SiC Schottky Diodes | |
Design, process, and performance of all-epitaxial normally-off SiC JFETs | |
Extreme Temperature SiC Integrated Circuit Technology | |
1200 V SiC Vertical-channel-JFET based cascode switches | |
Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors | |
High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen | |
4H-SiC MISFETs with Nitrogen-containing Insulators | |
SiC Inversion Mobility | |
Development of SiC diodes, power MOSFETs and intellegent Power Modules | |
Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation | |
Application of SiC-Transistors in Photovoltaic-Inverters | |
Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs | |
Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs | |
SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection | |
Table of Contents provided by Publisher. All Rights Reserved. |
The New copy of this book will include any supplemental materials advertised. Please check the title of the book to determine if it should include any access cards, study guides, lab manuals, CDs, etc.
The Used, Rental and eBook copies of this book are not guaranteed to include any supplemental materials. Typically, only the book itself is included. This is true even if the title states it includes any access cards, study guides, lab manuals, CDs, etc.