Silicon Carbide, Volume 1 Growth, Defects, and Novel Applications

by Friedrichs, Peter; Kimoto, Tsunenobu; Ley, Lothar; Pensl, Gerhard

• ISBN13: 9783527409532
• ISBN10: 352740953X
• Edition: 1st
• Format: Hardcover
• Copyright: 2009-12-02
• Publisher: Wiley-VCH

Summary

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Author Biography

* Gerhard Pensl works with his group on the growth of SiC single crystals for high power applications, its electrical and optical characterization, and the investigations on multicrystalline Si for solar cells. Mr Pensl is Professor of Physics and Director of the Department of Applied Physics at the Erlangen University.
* Lothar Ley is Professor at the University of Erlangen and Head of the Department of Technical Physics. Alongside their experimental research on SiC, his group also works on Diamonds and Carbon Nanotubes.
* Dr. Peter Friedrichs is Managing Director at SiCED, a Siemens Company located in Erlangen. SiCED develops technologies for SiC power semiconductors and systems based on these devices. Their research is devoted to device design and simulation as well as the characterization of devices via end of life tests.
* Tsunenobu Kimoto, Professor at the Department of Electronic Science and Engineering at Kyoto University, has dedicated his work to growth and characterization of wide bandgap semiconductors and the fabrication process of SiC devices. He is holding a patent on the manufacturing of Lateral Junciton FETs.

Table of Contents

Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds

Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique

Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects

Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches

EPR Identification of Intrinsic Defects in 4H-SiC

Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide

Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC

Characterization of defects in silicon carbide by Raman spectroscopy

Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation

Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation

Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation

Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors

Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems

Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces

Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS

Epitaxial Graphene: an new Material

Density Functional Study of Graphene Overlayers on SiC

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