Solid State Electronic Devices

by Streetman, Ben; Banerjee, Sanjay

• ISBN13: 9780130255389
• ISBN10: 0130255386
• Edition: 6th
• Format: Hardcover
• Copyright: 2006-01-01
• Publisher: PRENTICE HALL

Summary

For undergraduate-level courses in Electronic Devices. THE most widely used introduction to solid state electronic devices text, this book is designed to help students gain a basic understanding of semiconductor devices and the physical operating principles behind them. This two-fold approach 1) provides students with a sound understanding of existing devices, so that their studies of electronic circuits and systems will be meaningful, and 2) helps them develop the basic tools with which they can later learn about applications and the latest devices. The text provides one of the most comprehensive treatments of all the important semiconductor devices, and reflects the most current trends in the technology and theoretical understanding of the devices.

Author Biography

Ben G. Streetman is Dean of the College of Engineering at The University of Texas at Austin and holds the Dula D. Cockrell Centennial Chair in Engineering.

Table of Contents

Preface	xv
About the Authors	xix
Crystal Properties and Growth of Semiconductors	1	(27)
Semiconductor Materials	1	(2)
Periodic Structures	3	(1)
Crystal Lattices	3	(9)
Cubic Lattices	5	(2)
Planes and Directions	7	(2)
The Diamond Lattice	9	(3)
Bulk Crystal Growth	12	(5)
Starting Materials	12	(1)
Growth of Single Crystal Ingots	13	(1)
Wafers	14	(2)
Doping	16	(1)
Epitaxial Growth	17	(11)
Lattice Matching in Epitaxial Growth	18	(3)
Vapor-Phase Epitaxy	21	(2)
Molecular Beam Epitaxy	23	(5)
Atoms and Electrons	28	(27)
Introduction to Physical Models	28	(2)
Experimental Observations	30	(3)
The Photoelectric Effect	30	(1)
Atomic Spectra	31	(2)
The Bohr Model	33	(3)
Quantum Mechanics	36	(7)
Probability and the Uncertainty Principle	36	(2)
The Schrodinger Wave Equation	38	(2)
Potential Well Problem	40	(2)
Tunneling	42	(1)
Atomic Structure and the Periodic Table	43	(12)
The Hydrogen Atom	43	(3)
The Periodic Table	46	(9)
Energy Bands and Charge Carriers in Semiconductors	55	(53)
Bonding Forces and Energy Bands in Solids	55	(11)
Bonding Forces in Solids	55	(3)
Energy Bands	58	(3)
Metals, Semiconductors, and Insulators	61	(1)
Direct and Indirect Semiconductors	62	(2)
Variation of Energy Bands with Alloy Composition	64	(2)
Charge Carriers in Semiconductors	66	(14)
Electrons and Holes	67	(3)
Effective Mass	70	(4)
Intrinsic Material	74	(1)
Extrinsic Material	75	(4)
Electrons and Holes in Quantum Wells	79	(1)
Carrier Concentrations	80	(12)
The Fermi Level	80	(3)
Electron and Hole Concentrations at Equilibrium	83	(5)
Temperature Dependence of Carrier Concentrations	88	(2)
Compensation and Space Charge Neutrality	90	(2)
Drift of Carriers in Electric and Magnetic Fields	92	(10)
Conductivity and Mobility	92	(4)
Drift and Resistance	96	(1)
Effects of Temperature and Doping on Mobility	97	(2)
High-Field Effects	99	(1)
The Hall Effect	100	(2)
Invariance of the Fermi Level at Equilibrium	102	(6)
Excess Carriers in Semiconductors	108	(34)
Optical Absorption	108	(3)
Luminescence	111	(3)
Photoluminescence	111	(3)
Electroluminescence	114	(1)
Carrier Lifetime and Photoconductivity	114	(10)
Direct Recombination of Electrons and Holes	115	(2)
Indirect Recombination; Trapping	117	(3)
Steady State Carrier Generation; Quasi-Fermi Levels	120	(3)
Photoconductive Devices	123	(1)
Diffusion of Carriers	124	(18)
Diffusion Processes	124	(3)
Diffusion and Drift of Carriers; Built-in Fields	127	(3)
Diffusion and Recombination; The Continuity Equation	130	(2)
Steady State Carrier Injection; Diffusion Length	132	(2)
The Haynes-Shockley Experiment	134	(3)
Gradients in the Quasi-Fermi Levels	137	(5)
Junctions	142	(99)
Fabrication of p-n Junctions	142	(15)
Thermal Oxidation	142	(2)
Diffusion	144	(2)
Rapid Thermal Processing	146	(1)
Ion Implantation	147	(3)
Chemical Vapor Deposition (CVD)	150	(1)
Photolithography	151	(4)
Etching	155	(1)
Metallization	156	(1)
Equilibrium Conditions	157	(12)
The Contact Potential	159	(4)
Equilibrium Fermi Levels	163	(1)
Space Charge at a Junction	164	(5)
Forward- and Reverse-Biased Junctions; Steady State Conditions	169	(16)
Qualitative Description of Current Flow at a Junction	169	(5)
Carrier Injection	174	(9)
Reverse Bias	183	(2)
Reverse-Bias Breakdown	185	(9)
Zener Breakdown	186	(2)
Avalanche Breakdown	188	(2)
Rectifiers	190	(3)
The Breakdown Diode	193	(1)
Transient and A-C Conditions	194	(17)
Time Variation of Stored Charge	195	(3)
Reverse Recovery Transient	198	(3)
Switching Diodes	201	(1)
Capacitance of p-n Junctions	202	(8)
The Varactor Diode	210	(1)
Deviations from the Simple Theory	211	(9)
Effects of Contact Potential on Carrier Injection	212	(2)
Recombination and Generation in the Transition Region	214	(3)
Ohmic Losses	217	(1)
Graded Junctions	218	(2)
Metal-Semiconductor Junctions	220	(7)
Schottky Barriers	220	(2)
Rectifying Contacts	222	(2)
Ohmic Contacts	224	(2)
Typical Schottky Barriers	226	(1)
Heterojunctions	227	(14)
Field-Effect Transistors	241	(81)
Transistor Operation	242	(2)
The Load Line	242	(2)
Amplification and Switching	244	(1)
The Junction FET	244	(7)
Pinch-off and Saturation	245	(2)
Gate Control	247	(2)
Current-Voltage Characteristics	249	(2)
The Metal-Semiconductor FET	251	(4)
The GaAs MESFET	251	(1)
The High Electron Mobility Transistor (HEMT)	252	(2)
Short Channel Effects	254	(1)
The Metal-Insulator-Semiconductor FET	255	(31)
Basic Operation and Fabrication	256	(4)
The Ideal MOS Capacitor	260	(12)
Effects of Real Surfaces	272	(3)
Threshold Voltage	275	(2)
MOS Capacitance-Voltage Analysis	277	(3)
Time-dependent Capacitance Measurements	280	(3)
Current-Voltage Characteristics of MOS Gate Oxides	283	(3)
The MOS Field-Effect Transistor	286	(36)
Output Characteristics	286	(2)
Transfer Characteristics	288	(2)
Mobility Models	290	(3)
Short Channel MOSFET I-V Characteristics	293	(1)
Control of Threshold Voltage	293	(7)
Substrate Bias Effects	300	(1)
Subthreshold Characteristics	301	(3)
Equivalent Circuit for the MOSFET	304	(3)
MOSFET Scaling and Hot Electron Effects	307	(4)
Drain-Induced Barrier Lowering	311	(2)
Short Channel and Narrow Width Effect	313	(2)
Gate-Induced Drain Leakage	315	(7)
Bipolar Junction Transistors	322	(57)
Fundamentals of BJT Operation	322	(3)
Amplification with BJTs	325	(4)
BJT Fabrication	329	(3)
Minority Carrier Distributions and Terminal Currents	332	(8)
Solution of the Diffusion Equation in the Base Region	333	(1)
Evaluation of the Terminal Currents	334	(3)
Approximations of the Terminal Currents	337	(2)
Current Transfer Ratio	339	(1)
Generalized Biasing	340	(6)
The Coupled-Diode Model	340	(4)
Charge Control Analysis	344	(2)
Switching	346	(5)
Cutoff	347	(1)
Saturation	348	(1)
The Switching Cycle	349	(1)
Specifications for Switching Transistors	350	(1)
Other Important Effects	351	(14)
Drift in the Base Region	352	(1)
Base Narrowing	353	(1)
Avalanche Breakdown	354	(2)
Injection Level; Thermal Effects	356	(1)
Base Resistance and Emitter Crowding	357	(2)
Gummel-Poon Model	359	(4)
Kirk Effect	363	(2)
Frequency Limitations of Transistors	365	(6)
Capacitance and Charging Times	365	(3)
Transit Time Effects	368	(1)
Webster Effect	369	(1)
High-Frequency Transistors	369	(2)
Heterojunction Bipolar Transistors	371	(8)
Optoelectronic Devices	379	(36)
Photodiodes	379	(11)
Current and Voltage in an Illuminated Junction	379	(3)
Solar Cells	382	(2)
Photodetectors	384	(2)
Noise and Bandwidth of Photodetectors	386	(4)
Light-Emitting Diodes	390	(6)
Light-Emitting Materials	390	(2)
Fiber Optic Communications	392	(3)
Multilayer Heterojunctions for LEDs	395	(1)
Lasers	396	(4)
Semiconductor Lasers	400	(15)
Population Inversion at a Junction	400	(3)
Emission Spectra for p-n Junction Lasers	403	(1)
The Basic Semiconductor Laser	404	(1)
Heterojunction Lasers	405	(3)
Materials for Semiconductor Lasers	408	(7)
Integrated Circuits	415	(71)
Background	415	(5)
Advantages of Integration	416	(2)
Types of Integrated Circuits	418	(1)
Monolithic and Hybrid Circuits	418	(2)
Evolution of Integrated Circuits	420	(3)
Monolithic Device Elements	423	(21)
CMOS Process Integration	423	(14)
Silicon-on-Insulator (SOI)	437	(2)
Integration of Other Circuit Elements	439	(5)
Charge Transfer Devices	444	(5)
Dynamic Effects in MOS Capacitors	444	(2)
The Basic CCD	446	(1)
Improvements on the Basic Structure	447	(1)
Applications of CCDs	448	(1)
Ultra Large-Scale Integration (ULSI)	449	(25)
Logic Devices	452	(9)
Semiconductor Memories	461	(13)
Testing, Bonding, and Packaging	474	(12)
Testing	474	(2)
Wire Bonding	476	(2)
Flip-Chip Techniques	478	(1)
Packaging	479	(7)
Negative Conductance Microwave Devices	486	(18)
Tunnel Diodes	486	(4)
Degenerate Semiconductors	487	(1)
Tunnel Diode Operation	487	(3)
Circuit Applications	490	(1)
The IMPATT Diode	490	(4)
The Gunn Diode	494	(10)
The Transferred Electron Mechanism	494	(2)
Formation and Drift of Space Charge Domains	496	(3)
Fabrication	499	(5)
Power Devices	504	(39)
The p-n-p-n Diode	504	(7)
Basic Structure	505	(1)
The Two-Transistor Analogy	506	(1)
Variation of α with Injection	507	(1)
Forward-Blocking State	507	(1)
Conducting State	508	(1)
Triggering Mechanisms	509	(2)
The Semiconductor Controlled Rectifier	511	(4)
Gate Control	511	(1)
Turning off the SCR	512	(1)
Bilateral Devices	513	(1)
Fabrication and Applications	514	(1)
Insulated Gate Bipolar Transistor	515	(4)
APPENDICES
I. Definitions of Commonly Used Symbols	519	(4)
II. Physical Constants and Conversion Factors	523	(1)
III. Properties of Semiconductor Materials	524	(1)
IV. Derivation of the Density of States in the Conduction Band	525	(5)
V. Derivation of Fermi--Dirac Statistics	530	(4)
VI. Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature	534	(2)
VII. Solid Solubilities of Impurities in Si	536	(2)
VIII. Diffusivities of Dopants in Si and SiO2	538	(2)
IX. Projected Range and Straggle as a Function of Implant Energy in Si	540	(3)
Index	543