Spin Electronics

by Awschalom, David D.; Buhrman, Robert A.; Daughton, James M.; Von Molnar, Stephan; Roukes, Michael L.

• ISBN13: 9781402018022
• ISBN10: 1402018029
• Format: Hardcover
• Copyright: 2003-12-01
• Publisher: Kluwer Academic Pub

Summary

This book is a comparative review of spin electronics ("spintronics") research and development activities in the United States, Japan, and Western Europe conducted by a panel of leading U.S. experts in the field. It covers materials, fabrication and characterization of magnetic nanostructures, magnetism and spin control in magnetic nanostructures, magneto-optical properties of semiconductors, and magneto electronics and devices. Spin Electronics is unique in that it combines tutorial and introductory information on the significance of spin electronics research and applications development in this rapidly developing field. It reviews profound technical and policy implications of spin-based devices for the future of semiconductor electronics, non-volatile computer memory, nanotechnology, and quantum computing and communications. For example, the report discusses the potential for spin electronics to help maintain the progress in price and performance of electronics and computers described in Moore's Law. Finally, information on funding and level of effort in the laboratories visited by the panel is provided.

Table of Contents

List of Figures	xi
Preface	xiii
Foreword	xix
Executive summary	xxi
1. Spin Electronics-Is It the Technology of the Future?
Stephan von Molnar
Introduction	1	(1)
This Study	1	(3)
Spin Electronics: A Significant Field of Scientific Inquiry?	4	(2)
Conclusions	6	(1)
Acknowledgements	6	(1)
References	7	(2)
2. Materials for semiconductor spin Electronics
Stephan von Molnar
Discussion	9	(8)
Conclusions	17	(1)
References	17	(4)
3. Fabrication and Characterization of Magnetic Nanostructures
Michael L. Roukes
Background and Overview	21	(1)
Fabrication of Magnetic Nanostructures	21	(4)
Characterization of Magnetic Nanostructures	25	(5)
Near-term Perspective and Interim Conclusions	30	(2)
References	32	(3)
4. Spin Injection, Spin Transport and Spin Transfer
Robert A. Buhrman
Background and Overview	35	(6)
Research Activities in Japan	41	(2)
Research Activities in Europe	43	(2)
Concluding Comments	45	(1)
References	45	(4)
5. Optoelectronic Manipulation of spin in Semiconductors
David D. Awschalom
Introduction	49	(1)
Optoelectronic Manipulation of Spin Coherence in Semiconductors and Nanostructures	50	(2)
spin Transport in Heterostructures and Coherent Spintronies	52	(1)
Role of Disorder in Spin-based Electronics	53	(1)
Magnetic Doping in Semiconductor Heterostructures: Integration of Magnetics and Electronics	53	(3)
Optical Manipulation of Nuclear spins	56	(1)
Artificial Atoms in the Solid State: Quantum Dots	56	(2)
Outlook and General Conclusions	58	(1)
References	58	(3)
6. Magnetoelectronic Devices
James M. Daughton
Overview of Issues for Magnetoelectronic Devices	61	(1)
Salient Features of Magnetoelectronics Research in Europe and Japan	62	(5)
Comparison of Japan and Europe Research with that in the United States	67	(1)
References	68	(3)
APPENDICES
A. Appendix A. Biographies of Team Members	71	(6)
B. Appendix B. Site Reports-Europe	77	(50)
Johannes Kepley University	80	(2)
Unité Mixte de Physique CNRS/THALES	82	(3)
INESC	85	(3)
RWTH Aachen	88	(3)
University of Hamburg	91	(2)
University of Twente	93	(3)
University of Basel	96	(3)
University of Wuerzburg	99	(3)
University of Hamburg	102	(2)
IMEC	104	(3)
QinetiQ	107	(2)
Trinity College	109	(3)
Imperial College of Science, Technology and Medicine	112	(2)
University of Cambridge	114	(2)
University of Cambridge	116	(3)
University of Glasgow	119	(1)
University of Nottingham	120	(4)
University of Regensburg	124	(3)
C. Appendix C. Site Reports - Japan	127	(46)
University of Tokyo	127	(1)
The Institute for Solid State Physics	127	(2)
Tokyo Institute of Technology	129	(2)
Tokyo Institute of Technology	131	(2)
Waseda University	133	(3)
Tokyo Univ. of Agriculture and Technology	136	(4)
Kanagawa Academy of science and Technology (KAST)	140	(3)
Tokyo Institute of Technology	143	(2)
Fujitsu Laboratories Ltd.	145	(2)
NTT Basic Research Laboratory	147	(1)
NEC Fundamental Research Laboratories (FRL)	148	(2)
Joint Research Center for Atom Technology (JRCAT)	150	(4)
Japan Advanced Institute of Science and Technology	154	(1)
University of Tokyo, Department of Physics	155	(2)
University of Tokyo, Department of Electrical Engineering	157	(2)
The Institute of Scientific and Industrial Research	159	(3)
Osaka University	162	(2)
Tohoku University, Research Institute of Electrical Communication (RIEC)	164	(3)
Tohoku University, Department of Applied Physics	167	(2)
Tohoku University, Department of Materials science	169	(2)
Tohoku University	171	(2)
D. Appendix D. Highlights of Recent U.S. Research and Development Activities	173	(20)
E. Appendix E. Glossary	193	(4)
F. Appendix F. Index of sites	197