Spintronics

by Dietl; Awschalom; Kaminska; Ohno

• ISBN13: 9780080449562
• ISBN10: 0080449565
• Edition: 1st
• Format: Hardcover
• Copyright: 2008-11-07
• Publisher: Elsevier Science

Summary

This new volume focuses on a new, exciting field of research: Spintronics, the area also known as spin-based electronics. The ultimate aim of researchers in this area is to develop new devices which exploit the spin of an electron instead of, or in addition to, its electronic charge. In recent years many groups worldwide have devoted huge eforts to research of spintronic materials, from their technology through characterization to modeling. The resultant explosion of papers in this field and the sold scientific results achieved justify the publication of this volume. Its goal is to summarize the current level of understanding and to highlight some key results and milestones that have been achieved to date. Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. In addition, development of novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high-temperature electronics is anticipated. * Spintronics has emerged as one of the fastest growing areas of research * This text presents an in-depth examination of the most recent technological spintronic developments * Includes contributions from leading scholars and industry experts

Table of Contents

Preface	p. ix
Single Spin Coherence in Semiconductors	p. 1
Introduction	p. 2
Single Electron Spins in Quantum Dots	p. 3
Few Magnetic Spins in Quantum Wells	p. 18
Single Spins in Diamond	p. 27
References	p. 41
Theory of Spin-Orbit Effects in Semiconductors	p. 45
Introduction	p. 46
The Relativistic Origins of Spin-Orbit Coupling	p. 48
Band Structure of Semiconductors: Effective k - p Hamiltonians	p. 51
SHE and AHE	p. 61
Topological Berry's Phases in Spin-Orbit Coupled Systems: ACE	p. 79
References	p. 85
Fermi Level Effects on Mn Incorporation in III-Mn-V Ferromagnetic Semiconductors	p. 89
Introduction	p. 90
Sample Preparation and Characterization	p. 93
Effects of Mn Location on the Electronic and Magnetic Properties	p. 98
Concluding Remarks	p. 125
Acknowledgments	p. 130
References	p. 130
Transport Properties of Ferromagnetic Semiconductors	p. 135
Introduction	p. 135
Basic Transport Characteristics	p. 138
Extraordinary Magnetotransport	p. 167
Summary	p. 199
Acknowledgments	p. 200
References	p. 200
Spintronic Properties of Ferromagnetic Semiconductors	p. 207
Introduction	p. 207
Spin-Injection and Detection of Spin-Polarization	p. 209
Magnetic Tunnel Junction	p. 212
Magnetic DW	p. 218
Electric-Field Control of Ferromagnetism	p. 228
Optical Control of Ferromagnetism	p. 231
Summary	p. 234
Acknowledgments	p. 235
References	p. 235
Spintronic Nanodevices	p. 241
Introduction	p. 241
Tunneling Anisotropic Magnetoresistance	p. 244
Multi-TAMR Structures	p. 248
Volatile and Nonvolatile Operation	p. 250
Correlated Effects	p. 252
Portability	p. 259
Nanodevices	p. 260
Lateral Nanoconstrictions	p. 260
Current-Assisted Manipulation	p. 264
Local Lithographic Anisotropy Control	p. 268
Magnetic Characterization of Nanobars	p. 269
Transport Characterization of Nanobars	p. 271
Anisotropic Strain Relaxation	p. 274
Memory Device Using Local Anisotropy Control	p. 277
Device Operation	p. 278
Magnetic States	p. 279
Origin of the Resistance Signal	p. 280
Conclusion and Outlook	p. 283
Acknowledgments	p. 284
References	p. 284
Quantum Structures of II-VI Diluted Magnetic Semiconductors	p. 287
Magnetic and Electric Impurities in II-VI Nanostructures	p. 287
Carrier-Induced Ferromagnetism in 2D DMSs	p. 291
0D Systems	p. 298
Transport in Quantum II-VI DMS Structures	p. 316
Summary	p. 320
References	p. 320
Magnetic Impurities in Wide Band-gap III-V Semiconductors	p. 325
Introduction	p. 326
Diluted Magnetic Semiconductors	p. 330
Nature of Mn Impurity in III-V Semiconductors	p. 334
Magnetic Interactions in III-V DMSs with Mn	p. 352
GaN-Based DMSs	p. 357
Internal Reference Rule for Transition Metal Ions-Case of GaN	p. 361
Summary and Conclusions	p. 362
Acknowledgments	p. 364
References	p. 364
Exchange Interactions and Nanoscale Phase Separations in Magnetically Doped Semiconductors	p. 371
Introduction	p. 372
Substitutional Transition Metal Impurities in Semiconductors	p. 375
Origin of Exchange Interactions between Carriers and Localized Spins	p. 381
Effects of sp-d(f) Exchange Interactions	p. 382
Exchange Interactions between Effective Mass Carriers	p. 392
Models of Ferromagnetic Spin-Spin Interactions in Semiconductors	p. 397
p-d Zener Model of Carrier-Mediated Ferromagnetism	p. 399
Effects of Disorder and Localization on Carrier-Mediated Ferromagnetism	p. 407
Effects of Nonrandom Distribution of Magnetic ions	p. 416
Is Ferromagnetism Possible in Semiconductors with no Magnetic Elements?	p. 422
Summary	p. 423
Acknowledgments	p. 425
References	p. 425
Computational Nano-Materials Design for the Wide Band-Gap and High-T[subscript C] Semiconductor Spintronics	p. 433
Introduction	p. 433
Magnetic Mechanism, T[subscript c], and Unified Physical Picture	p. 436
Spinodal Nano-Decomposition and Nano-Spintronics Applications	p. 444
New Class of Oxide Spintronics without a 3d TM	p. 450
Conclusion	p. 452
Acknowledgments	p. 452
References	p. 452
Properties and Functionalities of MnAs/III-V Hybrid and Composite Structures	p. 455
Introduction	p. 455
Fabrication and Structure of GaAs:MnAs Nano-Particles	p. 456
Large Magnetoresistance at Room Temperature	p. 458
Spin Dependent Tunneling Transport Properties in III-V Based Heterostructures Containing GaAs:MnAs	p. 463
Properties of Zinc-Blende Type and NiAs-Type MnAs Nano-particles	p. 471
Magneto-Optical Device Applications	p. 478
Acknowledgments	p. 483
References	p. 484
Index	p. 487
Contents of Volumes in This Series	p. 499
Table of Contents provided by Ingram. All Rights Reserved.