Strained Silicon Heterostructures

by Maiti, C. K.; Chakrabarti, N. B.; Ray, S. K.

• ISBN13: 9780852967782
• ISBN10: 0852967780
• Format: Hardcover
• Copyright: 2001-05-01
• Publisher: Inst of Engineering & Technology

Summary

In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques have given rise to a new area of research of bandgap engineering in silicon based materials. This development has paved the way for heterojunction bipolar and field effect transistors, as well as for novel quantum devices. This title provides a comprehensive introduction to silicon heterostructures, including growth and characterization of materials and descriptions of new heterostructure devices, making it a useful reference for postgraduate students, researchers and scientists.

Author Biography

Dr Maiti at University of Technology, Loughborough Dr Chakrabarti is now associated with the VLSI laboratory of the Indian Institute of Technology, Kharagpur after retiring as a Professor in the Department of Electronics Dr Ray is an Associate Professor in the Physics department leading the semiconductor materials processing research group

Table of Contents

Preface	x
Introduction	1	(23)
References	19	(5)
Strained Layer Epitaxy	24	(74)
Film Deposition	25	(4)
Growth Kinetics	29	(8)
Hydrogen	29	(1)
Silane	30	(1)
Silane--Germane	31	(1)
Dichlorosilane	32	(2)
Ge Incorporation and Abruptness	34	(1)
Carbon-Containing Alloys	35	(2)
Deposition Techniques	37	(9)
Molecular Beam Epitaxy	38	(2)
UHVCVD	40	(1)
RTCVD and LRPCVD	40	(3)
Atmospheric CVD	43	(1)
Remote Plasma CVD	43	(1)
Solid Phase Epitaxy	44	(2)
Doping of Alloy Layers	46	(3)
Doping in MBE Growth	46	(2)
Doping in CVD Growth	48	(1)
Binary Si1-xGex Alloy Films	49	(8)
Binary Si1-yCy Alloy Films	57	(3)
Ternary Si1-x-yGexCy Alloy Films	60	(9)
Ge1-yCy and Related Alloy Films	69	(1)
Strained Si on Relaxed SiGe	70	(3)
Poly-SiGe Films	73	(1)
a-SiGe: H Films	74	(2)
Etching of Alloy Layers	76	(2)
Summary	78	(1)
References	79	(19)
Electronic Properties of Alloy Layers	98	(64)
Critical Layer Thickness	99	(8)
Energy Gap and Band Structure	107	(13)
Band structure: Bulk Si and Ge	108	(4)
Bulk SiGe Alloy	112	(1)
Strained SiGe Alloy	113	(2)
Effect of Strain	115	(5)
Band Alignment	120	(2)
Bandgap Narrowing	122	(2)
Scattering Mechanisms	124	(3)
SiGe: Hole Mobility	127	(8)
Doping Dependence	132	(3)
Strained Si: Electron Mobility	135	(4)
Strained Si: Hole Mobility	139	(1)
Mobility: SiC and SiGeC	140	(3)
Determination of Band Offset	143	(7)
SiGe	146	(1)
SiGeC	146	(3)
Strained Si	149	(1)
Summary	150	(1)
References	150	(12)
Gate Dielectrics on Strained Layers	162	(48)
Characterization Techniques	163	(2)
Oxidation of Si1-xGex Films	165	(10)
Thermal Oxidation	166	(1)
Rapid Thermal Oxidation	167	(7)
Alternative Techniques	174	(1)
Plasma Oxidation of SiGe Films	175	(9)
Microwave Plasma Oxidation	176	(1)
Growth Rate	177	(1)
Stoichiometry	178	(2)
Electrical Characterization	180	(2)
Trapping Characteristics	182	(2)
Oxidation Using N2O	184	(1)
Oxidation of Strained Si Films	184	(5)
Thermal Oxidation	185	(3)
Plasma Oxidation	188	(1)
Oxidation of Si1-x-yGexCy Films	189	(3)
Nitridation of Strained Layers	192	(5)
Summary	197	(3)
References	200	(10)
SiGe Heterojunction Bipolar Transistors	210	(62)
Principle of Operation	211	(3)
Fabrication of SiGe-HBTs	214	(16)
Non-passivated Double Mesa Technology	217	(1)
Passivated Double Mesa Technology	217	(2)
Differential SiGe-HBT Technology	219	(1)
IBM Epi-base Technology	219	(4)
IBM SiGe-BiCMOS Technology	223	(5)
SiGe-HBTs on SOI	228	(2)
Performance of SiGe-HBTs	230	(11)
SiGe-HBTs at Low Temperature	234	(4)
Parasitic Energy Barriers	238	(3)
Effect of Carbon Incorporation	241	(2)
Performance of SiGeC-HBTs	241	(2)
Power SiGe-HBTs	243	(3)
High Voltage SiGe Process	244	(2)
Si/SiGe-MMICs	246	(10)
Passive Components	248	(4)
SiGe RFICs	252	(1)
Bipolar vs. CMOS	253	(1)
Noise	253	(2)
Technology Choice	255	(1)
Applications of SiGe-HBTs	256	(1)
Summary	257	(2)
References	259	(13)
Heterostructure Field Effect Transistors	272	(68)
SiGe Quantum Well HFETs	273	(6)
Design of SiGe channel p-HFETs	279	(6)
Effect of SiGe Layer Thickness and Ge Mole Fraction	279	(2)
Effect of Oxide and Si cap Thickness	281	(1)
Channel Doping and Threshold Adjustment	282	(2)
Choice of gate material: n+ vs. p+ -poly	284	(1)
Experimental HFETs	285	(9)
Si1-xGex p-MOSFETs	286	(6)
Ge-channel p-MOSFETs	292	(2)
SiGe- and Ge-channel n-MOSFETs	294	(1)
SiC/SiGeC-channel p-HFETs	294	(3)
Si1-yCy p-MOSFETs	297	(3)
Vertical MOSFETs	300	(7)
Vertical SiGe p-HFETs	301	(4)
Scaling of Vertical FETs	305	(2)
Strained Si p-HFETs	307	(4)
Strained Si n-MOSFETs	311	(7)
HFETs on SOI/SOS	318	(8)
Source/Drain Engineering	326	(3)
SiGe-CMOS Process	329	(1)
Summary	330	(2)
References	332	(8)
BICFET, RTD and Other Devices	340	(32)
Bipolar Inversion Channel FETs	340	(12)
AC Response	349	(3)
Resonant Tunneling Diodes	352	(11)
Resonant Tunneling Hot Carrier Transistors	358	(5)
Electron Tunneling in SiGe-RTDs	363	(1)
Poly-SiGe Devices	363	(2)
Poly-SiGe TFTs	364	(1)
SiGe I2L Logic	365	(1)
Fabrication of I2L	365	(1)
SiGe Sensors	366	(1)
Summary	367	(1)
References	368	(4)
MODFETs	372	(37)
Modulation Doping	373	(3)
SiGe-channel p-MODFETs	376	(3)
Fabrication of p-MODFETs	379	(6)
Strained Si n-MODFETs	385	(4)
Ge-channel p-MODFETs	389	(3)
Heterojunction Complementary MOSFETs	392	(1)
Applications of n-MODFETs	393	(6)
Comparison of Performance	399	(2)
MODHBT	401	(1)
Summary	402	(1)
References	402	(7)
Contact Metallization on Strained Layers	409	(31)
Contacts on SiGe	410	(12)
Al-SiGe	411	(3)
Ti-SiGe	414	(7)
Ir-SiGe	421	(1)
Contacts on SiGeC	422	(3)
Contacts on Ge1-yCy	425	(2)
Contacts on Si1-yCy	427	(1)
Metal/strained-Si Interface	427	(6)
Summary	433	(1)
References	434	(6)
Si/SiGe Optoelectronics	440	(50)
Optoelectronic Devices: Principle	440	(3)
Optical Detectors Using SiGe Alloys	443	(16)
Quantum Efficiency, Responsivity and Noise	444	(1)
Gain, Frequency and Time Response of APDs	444	(4)
High Frequency Photodetectors	448	(2)
MSM Photodetectors	450	(3)
Schottky Photodetectors	453	(2)
HIP Photodetectors	455	(2)
Ge Photodiodes	457	(2)
QW Photodiodes	459	(8)
p-i-n Photodiode	461	(2)
Microcavity Photodiodes	463	(4)
Optical Waveguides	467	(3)
Directional Couplers	470	(1)
Modulators	470	(1)
SiGe LEDs	470	(2)
Solar Cells	472	(3)
Integrated Optoelectronics	475	(3)
Summary	478	(1)
References	479	(11)
Index	490