Stress and Strain in Epitaxy : Theoretical Concepts, Measurements, and Applications: Keynote Lectures of the Third Porquerolles School on Special Topics in Surface Science, Ile de Porquerolles, France, October 1-7, 2000

by Porquerolles School on Special Topics in Surface Science 2000 porquer; Hanbucken, Margrit; Deville, Jean-Paul

• ISBN13: 9780444508652
• ISBN10: 0444508651
• Format: Paperback
• Copyright: 2001-07-01
• Publisher: Elsevier Science Ltd

Summary

This book contains keynote lectures which have been delivered at the 3rd Porquerolles' School on Surface Science, SIR2000 (Surfaces-Interfaces-Relaxation). The aim of this school was to review the main concepts necessary to understand the role of interfacial stress, strain and relaxation in crystal growth by heteroepitaxy. By bringing together scientists from various fields (physics, chemistry, materials science and engineering) which daily use complementary methodological approaches (experiment, theory, modelization), the school allowed to offer 11 multidisciplinary courses. This book addresses the state of art of stress in epitaxial materials, it describes the various methods to measure the atomic displacement and stress fields, it reviews the spectroscopic methods necessary to map the interface chemistry, it details the theoretical methods and concepts which are needed to predict them and it questions the fact that stress and relaxation can induce specific properties in magnetism, catalysis, electron transport and so on. The field of stress and strain in heteroepitaxy has know large developments during the last ten years. New techniques have been used to set up new devices in which functionalities are obtained through structuration at a nanometer scale. Large-scale integration and reduced dimensions are the key factors to optimize the achievements of these devices. Already used in industry (quantum wells, magnetic sensors), these devices are obtained by molecular beam epitaxy, sputtering or pulsed laser deposition. Their reduced dimensionality increased the number of surfaces and interfaces, the role of which has to be precised. Experimentalists try now to associate materials having very different crystal structure and chemical composition. The elastic stress stored in the device can induce various phenomena which have to be evaluated, understood and predicted. The book intends also to show that many questions are still in debate.

Table of Contents

Foreword	v
Organizers and Sponsors	vii
Introduction	1	(2)
Raymond Kern
CRMC2, Marseille
Some elastic effects in crystal growth	3	(60)
Pierre Muller
Raymond Kern
CRMC2, Marseille
Introduction to the atomic structure of surfaces: a theoretical point of view	63	(36)
Marie-Catherine Desjonqueres
CEA Saclay
Daniel Spanjaard
LPS
Orsay
Dislocations and stress relaxation in heteroepitaxial films	99	(20)
Ladislas Kubin
ONERA, Chatillon
An atomistic approach for stress relaxation in materials	119	(32)
Guy Treglia
CRMC2, Marseille
Ab initio study of the structural stability of thin films	151	(4)
(only abstract and references in this book)
Alain Pasturel
LPM2C, Grenoble
Stress, strain and chemical reactivity: a theoretical analysis	155	(18)
Philippe SAUTET
IRC, Lyon
Strain measurements in ultra-thin films using RHEED and X-ray techniques	173	(28)
Bruno GILLES
ENSEEG-INPG, Saint Martin d'Heres
Measurements of displacement and strain by high-resolution transmission electron microscopy	201	(20)
Martin HYTECH
CECM, Vitry
Stress measurements of atomic layers and at surfaces	221	(22)
Dirk SANDER
Max-Planck-Institut fur Mikrostrukturphysik, Halle, Germany
STM spectroscopy on semiconductors	243	(44)
Didier STIEVENARD
IEMN-ISEN, Lille
Spatially resolved surface spectroscopy	287
Jacques CAZAUX
Universite de Reims
Jean OLIVIER
LCR
Thomson-CSF, Orsay