Towards the First Silicon Laser

by Pavesi, Lorenzo; Gaponenko, S. V.; Dal Negro, Luca

• ISBN13: 9781402011948
• ISBN10: 1402011946
• Format: Paperback
• Copyright: 2003-09-01
• Publisher: Kluwer Academic Pub

Summary

Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.

Table of Contents

Preface	ix
Photograph of Participants	x
Introduction	xi
Part I. Light emitting diodes
High efficiency silicon light emitting diodes	1	(10)
Martin A. Green, Jianhua Zhao, Aihua Wang and Thorsten Trupke
Dislocation-based silicon light emitting devices	11	(10)
M.A. Lourenço MSA Siddiqui, G. Shao, R.M. Gwilliam and K.P. Homewood
Efficient electroluminescence in alloyed silicon diodes	21	(8)
O.B. Gusev, M.S. Bresler, I.N. Yassievich and B.P. Zakharchenya
Light emitting devices based on silicon nanocrystals	29	(16)
A. Irrera, D. Pacifci, M. Miritello, G. Franzò, F. Priolo, F. Iacono, D. Sanflippo, G. Di Stefano, P.G. Fallica
Optical and electrical characteristics of LEDs fabricated from Si-nanocrystals. embedded in SiO2	45	(10)
B. Garrido, O. Gonzalez, S. Cheylan, M. López, A. Pérez-Rodriguez, C. Garcia, P. Pellegrino, R. Ferrer, J.R. Morante, J. De La Torre, A. South, A. Poncet, C. Busseret, M. Lemiti, G. Eremond and G. Guillot
Electroluminescence in Si/SiO2 Layers	55	(6)
L. Heikkilä, R. Punkkinen and H.-P. Hedman
Reverse biased porous silicon light emitting diodes	61	(8)
S. Lazarouk
Strong blue light emission from ion implanted Si/SiO2 structures	69	(10)
W. Skorupa, L. Rebohle, T. Gebel and M. Helm
Si/Ge nanostructures for LED	79	(10)
G.E. Cirlin, V.G. Talalaev, N.D. Zakharov and P. Werner
Part II. Silicon nanocrystals
Optical spectroscopy of single silicon quantum dots	89	(20)
Jan Valenta, Jan Linnros, Robert Juhasz, Frank Cichos and Jörg Martin
Luminescence from Si/SiO2 nanostructures	109	(14)
Yoshihiko Kanemitsu
Electronic and dielectric properties of porous silicon	123	(8)
D. Kovalev and J. Diener
Silicon technology used for size-controlled silicon nanocrystals	131	(8)
M. Zacharias, J. Heitmann, L.X. Vi, E. Wildanger and R. Scholz
Structural and optical properties of silicon nanocrystals embedded in Silicon Oxide films	139	(6)
M. Miu, A. Angelescu, I. Kleps, M. Simion and A. Bragaru
Part III. Optical gain in silicon nanocrystals
Stimulated emission in silicon nanocrystals Gain measurement and rate equation modelling	145	(20)
L. Dal Negro, M. Cazzanelli, Z. Gaburro, P. Bettotti, L. Pavesi, F. Priolo, G. Franzò, D. Pacifici and F. Iacona
Lasing effects in ultrasmal silicon nanoparticles	165	(16)
Munir H. Nayfeh
On fast optical gain in silicon nanostructures	181	(10)
L. Khriachtchev and M. Räsänen
Experimental observation of optical amplification in silicon nanocrystals	191	(6)
M. Ivanda, U.V. Desnica, C.W. White and W. Kiefer
Optical amplification in nanocrystalline silicon superlattices	197	(12)
Philippe M. Fauchet and Jinhao Ruan
Optical gain from silicon nanocrystals a critical perspective	209	(14)
A. Polman and R.G. Elliman
Optical gain measurements with variable stripe length technique	223	(20)
J. Valenza, K Luterová, R. Tomasiunas, K. Dohnalová, B. Hönerlage and I. Pelant
Part IV. Theory of silicon nanocrystals
Theory of silicon nanocrystals	243	(18)
C. Deletue, G. Allan and M. Lannoo
Gain theory and models in silicon nanostructures Paper dedicated to the memory of Claudio Berta	261	(20)
Stefano Ossicini, C. Arcangeli, O. Bisi, Elena Degoli, Marcello Luppi, Rita Magri, L. Dal Negro and L. Pavesi
Part V. Silicon/Germanium quantum dots and quantum cascade structures
Si-Ge quantum dot laser: What can we learn from III-V experience?	281	(12)
N.N. Ledentsov
Promising SiGe superlattice and quantum well laser candidates	293	(14)
Greg Sun, Richard Soref and Zoran Ikonic
Optical properties of arrays of Ge/Si quantum dots in electric field	307	(8)
A.V. Dvurechenski and A.I Yakimov
MBE of Si-Ge heterostructures with Ge nanocrystals	315	(10)
O.P. Pchelyakov, A.I. Nikiforov, B.Z. OlshanetskY, K.V. Romanyup, S.A. Teys
Strain compensated Si/SiGe quantum cascade emitters grown on SiGe pseudosubstrater	325	(6)
L. Diehi, S. Mentese, H. Sigg, E. Müller, D. Griitzmacher, U. Genisser, I. Sagnes, T. Fromherz, J. Stangt, T. Roch, G. Bauer, Y. Campidelli, O. Kern, D. Bensahel, J. Faist
Part VI. Terahertz silicon laser
Terahertz silicon lasers: Intracentre optical Pumping	331	(28)
S.G. Pavlov, H.-W. Hübers, M.H. Rümmeli, J.N. Hoverier T.O. KLaasen, R. Kh. Zhukavin, A.V. Muravjov and V.N. Shastin
Silicon lasers based on shallow donor centres: Theoretical background and experimental results
V.N. Shastin, E.E. Orlova, R.Kh. Zhukavin, S.G. Pavlov, H.-W. Hübers and H. Riemann
Resonant states in modulation doped SiGe Heterostructures as a source of THz lasin
A.A. Prokofjev, M.A. Odnoblyudov and I.N. Yassievich
THz lasing of strained p-Ge and Si/Ge structures	359	(8)
M.S. Kagan
Terahertz emission from Silicon-Germanium quantum cascades	367	(16)
R.W. Kelsall, Z. Ikonic, P. Harrison, S.A. Lynch, R. Bates, D.J. Paul, D.J. Norris, S.L. Liew, A.G. Cullis, D.J. Robbins, P. Murzyn, C.R. Pidgeon, D.D. Arnone and R.A. Soref
Part VII. Optical gain in Er doped Si nanocrystals
Towards an Er-doped Si nanocrystal sensitized waveguide laser The thin line between gain and loss	383	(18)
Pieter G. Kik and Albert Polman
Optical gain using nanocrystal sensitized Erbium: NATO-Series	401	(20)
Jung H. Shin, Hak-Seung Han and Se-Young Seo
Excitation mechanism of Er photoluminescence in bulk Si and SiO2 with nanocrystals	421	(8)
I.N. Yassievich, A.S. Moskalenko, O.B. Gusev, and M.S. Bresler
Sitae/Si:Er light emitting transistors	429	(16)
W.X. Ni, C.X. Du, G.V. Hansson, A. Elfving, A. Vörckel and Y. Fu
SMBE grown uniformly and selectively doped Si:Er structures for LEDS and lasers	445	(10)
Z.F. Krasilnik, V.Ya. Aleshkin, B.A. Andreev, O.B. Gusev, W. Jantsch, L.V. Krasilnikova, D.I. Kryzhkov, V.P. Kuznetsov, V.G. Shengurov, V.B. Shmagin, N.A. Sobolev, M.V. Stepikhova, and A.N Yablonsky
UV-Blue lasers based on InGaN/GaN/Al2O3 and on InGaN/GaN/Si heterostrutures	455	(10)
G.P. Yablonkii and M. Heuken
Part VII Silicon Photonics
Silicon microphotonics: the next killer technology	465	(12)
Lionel C. Kimerling
Subject Index	477	(2)
List of Participants	479