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Elvira Fortunato is Associate Professor and Director of Institute for Nanotechnologies, Nanomaterials and Nanosciences at the New University of Lisbon. She is one of the inventors of paper transistors and paper memory and was one of the pioneers of European research on thin-film transistors based on oxide semiconductors. She has been Associate Editor of Rapid Research Letters Physica Status Solidi since November 2006 and is the recipient of several awards, including the award for Scientific Excellence from the Portuguese Science Foundation (2005). She is the author of more than 200 papers and has been an invited speaker at MRS, E-MRS and NAIST. Coauthors at CENIMAT, New University of Lisbon: Rodrigo Ferrão de Paiva Martins, Luís Pereira, Pedro Barquinha.
Preface | p. xiii |
Acknowledgments | p. xv |
Introduction | p. 1 |
Oxides and Transparent Electronics: Fundamental Research or Heading Towards Commercial Products? | p. 1 |
The Need for Transparent (Semi)Conductors | p. 3 |
Reaching Full Transparency: Dielectrics and Substrates | p. 5 |
References | p. 6 |
N-type Transparent Semiconducting Oxides | p. 9 |
Introduction: Binary and Multicomponent Oxides | p. 9 |
Binary Compounds: the Examples of Zinc Oxide and Indium Oxide | p. 9 |
Ternary and Quaternary Compounds: the Examples of Indium-Zinc Oxide and Gallium-Indium-Zinc Oxide | p. 12 |
Sputtered n-TSOs: Gallium-Indium-Zinc Oxide System | p. 16 |
Dependence of the Growth Rate on Oxygen Content in the Ar+O2, Mixture and Target Composition | p. 16 |
Structural and Morphological Properties | p. 18 |
Electrical Properties | p. 22 |
Optical Properties | p. 41 |
Sputtered n-TSOs: Gallium-Zinc-Tin Oxide System | p. 49 |
Solution-Processed n-TSOs | p. 51 |
ZTO by Spray-pyrolysis | p. 51 |
ZTO by Sol-gel Spin-coating | p. 52 |
GIZO Sol-gel by Spin-coating | p. 52 |
References | p. 55 |
P-type Transparent Conductors and Semiconductors | p. 63 |
Introduction | p. 63 |
P-type Transparent Conductive Oxides | p. 64 |
Thin Film Copper Oxide Semiconductors | p. 66 |
Role of Oxygen in the Structure, Electrical and Optical Performance | p. 70 |
Thin Film Tin Oxide Semiconductors | p. 75 |
Structure, Composition and Morphology of Tin Oxide Films | p. 78 |
Electrical and Optical Properties of Tin Oxide Films | p. 84 |
References | p. 94 |
Gate Dielectrics in Oxide Electronics | p. 101 |
Introduction | p. 101 |
High-¿ Dielectrics: Why Not? | p. 102 |
Requirements | p. 103 |
High-¿ Dielectrics Deposition | p. 106 |
Sputtered High-¿ Dielectrics in Oxide TFTs | p. 106 |
Hafnium Oxide | p. 107 |
Multicomponent Co-sputtered HfO2, Based Dielectrics | p. 117 |
Multicomponent Dielectrics from Single Target | p. 126 |
Tantalum Oxide (Ta2O5) | p. 130 |
Multicomponent Ta2O5 Based Dielectrics | p. 133 |
Multilayer Dielectrics | p. 138 |
High-¿ Dielectrics/Oxide Semiconductors Interface | p. 141 |
Summary | p. 146 |
References | p. 147 |
The (R)evolution of Thin-Film Transistors (TFTs) | p. 155 |
Introduction: Device Operation, History and Main Semiconductor Technologies | p. 155 |
Device Structure and Operation | p. 155 |
Brief History of TFTs | p. 161 |
Comparative Overview of Dominant TFT Technologies | p. 168 |
Fabrication and Characterization of Oxide TFTs | p. 170 |
N-type GIZO TFTs by Physical Vapor Deposition | p. 171 |
N-type GZTO TFTs by Physical Vapor Deposition | p. 187 |
N-type Oxide TFTs by Solution Processing | p. 189 |
P-type Oxide TFTs by Physical Vapor Deposition | p. 193 |
N-type GIZO TFTs with Sputtered Dielectrics | p. 196 |
References | p. 202 |
Electronics With and On Paper | p. 211 |
Introduction | p. 211 |
Paper in Electronics | p. 212 |
Paper Properties | p. 214 |
Structure, Morphology and Thermal Properties | p. 214 |
Electrical Properties of the Paper | p. 218 |
Resistivity Behaviour of Transparent Conductive Oxides Deposited on Paper | p. 223 |
Paper Transistors | p. 225 |
Current Transport in Paper Transistors | p. 228 |
Floating Gate Non-volatile Paper Memory Transistor | p. 230 |
Memory Paper Device Feasibility and Stability | p. 233 |
Memory Selective and Charge Retention Time Behaviors | p. 234 |
Complementary Metal Oxide Semiconductor Circuits With and On Paper-Paper CMOS | p. 237 |
Capacitance-Voltage and Current-Voltage Characteristics of N/P-Type Paper Transistors | p. 240 |
N- and P-channel Paper FET Operation | p. 243 |
CMOS Inverter Working Principles | p. 244 |
Paper CMOS Performance | p. 246 |
Solid State Paper Batteries | p. 249 |
Electrochromic Paper Transistors | p. 252 |
Paper UV Light Sensors | p. 255 |
References | p. 256 |
A Glance at Current and Upcoming Applications | p. 267 |
Introduction: Emerging Areas for (Non-)transparent Electronics Based on Oxide Semiconductors | p. 267 |
Active Matrices for Displays | p. 268 |
Display Market Overview and Future Trends | p. 268 |
Driving Schemes and TFT Requirements for LCD and OLED Displays | p. 269 |
Displays with Oxide-Based Backplanes | p. 271 |
Transparent Circuits | p. 273 |
Inverters and Ring Oscillators | p. 273 |
The Introduction of Oxide CMOS | p. 275 |
Oxide Semiconductor Heterojunctions | p. 278 |
Oxide Semiconductor Heterojunctions in the Literature | p. 278 |
GIZO Heterojunctions Fabricated at CENTMAT | p. 279 |
Field Effect Biosensors | p. 280 |
Device Types and Working Principles | p. 280 |
Oxide-Based Biosensors Fabricated at CENTMAT | p. 281 |
References | p. 284 |
Index | p. 287 |
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