Ulsi Devices

by Chang, C. Y.; Sze, Simon M.

• ISBN13: 9780471240679
• ISBN10: 0471240672
• Edition: 1st
• Format: Hardcover
• Copyright: 2000-05-18
• Publisher: Wiley-Interscience

Summary

A complete guide to current knowledge and future trends in ULSI devices Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics, with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices as MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications. Supplemented with introductory material and references for each chapter as well as more than 400 illustrations, coverage includes: a?? The physics and operational characteristics of the different components a?? The evolution of device structures the ultimate limitations on device and circuit performance a?? Device miniaturization and simulation a?? Issues of reliability and the hot carrier effect a?? Digital and analog circuit building blocksa??An Instructora??s Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department

Author Biography

C. Y. CHANG, PhD, is a National Chair Professor at the National Chiao Tung University in Hsinchu, Taiwan. <P>S. M. SZE, PhD, is UMC Chair Professor at the National Chiao Tung University.

Table of Contents

Contributors	ix
Preface	xi
Introduction	1	(18)
C. Y. Chang
S. M. Sze
Semiconductor Industry	1	(2)
Milestones in ULSI-Related Devices	3	(6)
Technology Trends	9	(4)
Organization of the Book	13	(6)
References	15	(4)
PART I DEVICE FUNDAMENTALS
Bipolar Transistor Fundamentals	19	(54)
E. Kasper
Introduction	19	(1)
Structure and Operating Regimes	20	(5)
The Inner-Box-Shaped Transistor	25	(26)
Self-Adjusted Transistor Structures	51	(9)
Heterojunction Bipolar Transistor	60	(6)
Summary and Future Trends	66	(7)
References	67	(4)
Problems	71	(2)
MOSFET Fundamentals	73	(76)
P. Wong
Introduction	73	(1)
MOSFET Device Physics: First-Order Models	74	(10)
Device Scaling	84	(4)
Short-Channel Effects	88	(14)
Transport Properties	102	(8)
Parasitic Effects	110	(20)
Evolution of MOSFET Device Structures	130	(5)
Summary and Future Trends	135	(14)
References	139	(8)
Problems	147	(2)
Device Miniaturization and Simulation	149	(72)
S. Banerjee
B. Streetman
Introduction	149	(1)
Band Structure	150	(10)
Semiclassical Electron Dynamics	160	(3)
Equilibrium Statistics	163	(7)
Scattering Theory	170	(12)
Monte Carlo Simulations	182	(3)
Boltzmann Transport Equation	185	(26)
Summary and Future Trends	211	(10)
References	216	(2)
Problems	218	(3)
PART II DEVICE BUILDING BLOCKS AND ADVANCED DEVICE STRUCTURES
SOI and Three-Dimensional Structures	221	(54)
J. P. Colinge
Introduction	221	(1)
SOI Substrates	222	(8)
The SOI MOSFET	230	(9)
3D and Novel SOI Devices	239	(15)
SOI Circuits	254	(9)
Summary and Future Trends	263	(12)
References	263	(9)
Problems	272	(3)
The Hot-Carrier Effect	275	(58)
B. Doyle
Introduction	275	(3)
Damage Identification	278	(3)
Gate Voltage Dependence of Stress	281	(13)
Hot-Carrier Lifetime Estimation: AC and DC	294	(8)
Hot-Carrier Measurements	302	(8)
Structure Dependence	310	(4)
Process Dependence	314	(8)
Summary and Future Trends	322	(11)
References	324	(8)
Problems	332	(1)
DRAM and SRAM	333	(44)
S. Shichijo
Introduction	333	(1)
DRAM Cell Structures	333	(7)
DRAM Operation Principle	340	(6)
DRAM Circuits	346	(12)
SRAM Memory Cell Structure	358	(4)
SRAM Operation Principle	362	(5)
SRAM Circuits	367	(4)
Summary and Future Trends	371	(6)
References	372	(2)
Problems	374	(3)
Nonvolatile Memory	377	(100)
J. Caywood
G. Derbenwich
Introduction	377	(1)
Floating-Gate Memory	378	(15)
Floating-Gate Memory Arrays	393	(28)
Reliability of Floating-Gate Memories	421	(5)
Future Trends and Summary of Floating-Gate Memory	426	(4)
Silicon Nitride Memory	430	(18)
Ferroelectric Memory	448	(29)
References	463	(7)
Problems	470	(7)
PART III CIRCUITT BUILDING BLOCKS AND SYSTEM-IN-CHIP CONCEPT
CMOS Digital and Analog Building Block Circuits for Mixed-Signal Applications	477	(70)
D. Pehlke
M.-C. F. Chang
Introduction	477	(2)
CMOS for Digital Applications	479	(13)
CMOS Technology for Analog and RF Applications	492	(1)
CMOS Low-Noise Amplifiers	493	(15)
Mixers and Frequency Translation	508	(12)
CMOS Voltage-Controlled Oscillators	520	(15)
CMOS Power Amplifiers	535	(5)
Summary and Future Trends	540	(7)
References	541	(2)
Problems	543	(4)
High-Speed or Low-Voltage, Low-Power Operations	547	(84)
I. C. Chen
W. Liu
Introduction	547	(1)
High-Speed Considerations for Digital Applications	548	(33)
Low Voltage/Low Power Considerations for Digital Applications	581	(4)
Cutoff and Maximum Oscillation Frequencies	585	(12)
Large-Signal Power and Efficiency	597	(10)
Noise Figure	607	(9)
Summary and Future Trends	616	(15)
References	618	(9)
Problems	627	(4)
System-on-Chip Concepts	631	(54)
M. Pelgrom
Introduction	631	(2)
Embedded Modules on an IC	633	(6)
Technology for Mixed-Signal Circuits	639	(6)
Technology Limits	645	(6)
Analog Interfaces	651	(13)
Integration of Blocks	664	(12)
System-on-Chip Concept	676	(3)
Summary and Future Trends	679	(6)
References	681	(2)
Problems	683	(2)
Appendix A. List of Symbols	685	(2)
Appendix B. International System of Units (SI Units)	687	(2)
Appendix C. Unit Prefixes	689	(2)
Appendix D. Greek Alphabet	691	(2)
Appendix E. Physical Constants	693	(2)
Appendix F. Properties of Si at 300 K	695	(2)
Index	697