Ultrafast Phenomena In Semiconductors And Nano-strcture Materials 8

by Tsen, Kong-Thon

• ISBN13: 9780819452603
• ISBN10: 0819452602
• Format: Paperback
• Copyright: 2004-06-30
• Publisher: Society of Photo Optical

Summary

Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.

Table of Contents

Femtosecond investigation of carbon nanotubes	p. 1
Optical characteristics of hexagonal and cubic GaN self-assembled quantum dots	p. 8
Femtosecond near-field spectroscopy of single quantum dots	p. 16
Spectroscopy and dynamics of GaSe nanoparticles and nanoparticle aggregates	p. 32
Using diverse theoretical approaches to study electron transport through organic molecules	p. 44
Time-resolved photoluminescence of the ZnO nanorods : size and temperature dependences	p. 53
Ultrafast surface plasmon resonance Landau damping and electron kinetics in metal nanoparticles	p. 65
Optical properties and carrier dynamics of InP quantum dots embedded in GaP	p. 77
Ultrafast dephasing of surface plasmon excitation in metal nanoparticles	p. 90
Nano-ultrasonics : science and technology	p. 101
Picosecond heat pulse propagation in single-wall carbon nanotubes	p. 110
Third-harmonic generation in carbon nanotubes : theory and experiment	p. 116
Linear and nonlinear optical properties of single-wall carbon nanotubes	p. 126
Ultrafast intersubband transitions in GaN/AlGaN heterostructures at -1.55-[mu]m wavelength	p. 134
Development of trains of ultrashort strain solitons in sapphire and ruby	p. 144
Ultrafast carrier relaxation in group-III nitride multiple quantum wells	p. 158
Generation of color centers by femtosecond laser pulses in wide-bandgap materials	p. 169
THz radiation and acoustic phonon pulse wave from GaN-based light-emitting diode structures generated by ultrashort-pulse lasers	p. 180
Time-resolved photoluminescence studies of Si- and Mg-doped AIN epilayers	p. 188
Picosecond transient photoconductivity in organic molecular crystals	p. 196
Far-infrared phonon-polariton dispersion studied by THz time-domain spectroscopy	p. 208
Electronic charge transport in sapphire studied by optical-pump/THz-probe spectroscopy	p. 216
Picosecond structural dynamics in photoexcited semiconductors probed by time-resolved x-ray diffraction	p. 222
Generation and propagation of THz monochromatic acoustic phonons in gallium arsenide	p. 231
Thermal stability of ion-irradiated InGaAs with subpicosecond carrier lifetime	p. 239
Picosecond vibrational dynamics and stability of deuterated amorphous silicon thin films	p. 250
Two-dimensional Fourier transform optical spectroscopy of GaAs quantum wells	p. 257
Coherent phonon spectroscopy of semiconductor-metal interfaces	p. 266
Evidence of strong phonon-assisted resonant intervalley up-transfer for electroncs in type-II GaAs/AlAs superlattices	p. 276
Effects of collective excitations and scatterings in quantum well intersubband transitions	p. 284
Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation	p. 299
Spins ... free of charge	p. 310
Fabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs	p. 321
Coherent vs. incoherent charge transport in semiconductor quantum cascade structures	p. 333
Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments	p. 348
Intersubband transitions in GaN/AIN quantum wells for Tb/s optical switching	p. 355
Picosecond electrical excitation of a two-dimensional electron gas	p. 364
Ultrafast optoelectronic devices using laser-assisted field emission	p. 372
Picosecond range switching of a GaAs avalanche transistor due to bulk carrier generation by avalanching Gunn domains	p. 382
Single-HBT-based optical receiver front-end	p. 394
Subpicosecond Raman studies of nonequilibrium electron transport in an In[subscript 0.4]Ga[subscript 0.6]N epilayer grown on GaN	p. 404
Electron and hole velocity overshoots in an Al[subscript 0.3]Ga[subscript 0.7]As-based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy	p. 412
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