Ultrathin Sio2 and High-K Materials for Ulsi Gate Dielectrics

by Huff, H. R.; Richter, C. A.; Green, M. L.; Lucovsky, G.; Hattori, T.

• ISBN13: 9781558994744
• ISBN10: 1558994742
• Format: Hardcover
• Copyright: 1999-09-01
• Publisher: Materials Research Society

Summary

Device scaling has been the engine driving the continued pervasiveness of the microelectronics revolution. The SIA roadmap calls for 4-5nm films (oxide equivalent thickness) in 2000, and <1.5nm within 10 years. While it is obvious that SiO2 and oxynitride dielectrics will be with us for the near future, their processing and performance will face severe challenges. Alternate gate dielectric materials with higher dielectric constants are also being developed. They will be introduced as SiO2 performance diminishes. This book highlights the advanced processing of ultrathin SiO2, oxynitrides, composite oxide/nitrides, and nitrides, as well as work on high-K gate dielectrics. Topics include: advances in ultrathin oxides and oxynitrides; silicon nitride; silicon oxynitrides and nitrides - alternative processes for growing SiO2; atomic-scale control of the dielectric/silicon interface; electrical properties of ultrathin gate dielectrics; reliability of ultrathin gate dielectrics; high-K gate dielectrics; high-K gate dielectrics - alternative processes; characterization of gate dielectrics and integrated processing.

Table of Contents

Preface
Low-Temperature Formation of SiO[subscript 2] and High Dielectrics Constant Material for ULSI in the 21st Century	p. 3
Growth of Thin SiO[subscript 2] by "Spike" Rapid Thermal Oxidation	p. 13
Ultrathin Silicon Dioxide Formation by Ozone on Ultraflat Si Surface	p. 21
Ultrathin Oxide Film Formation Using Radical Oxygen In a UHV System	p. 27
Low Damage Nitridation of Silicon Oxide Surfaces by Remote-Plasma-Excited Nitrogen	p. 33
Ultrathin Gate Oxides With Shallow Nitrogen Implants as Effective Barriers to Boron Diffusion	p. 39
Ultrathin Gate Oxide Prepared by Oxidation in D[subscript 2]O for MOS Device Applications	p. 45
Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy	p. 51
Combined Thermal and UV Growth of Thin Dielectrics on Silicon in an NO Environment	p. 57
Formation of High-Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO	p. 65
JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics	p. 73
High-Quality Ultrathin CVD Si[subscript 3]N[subscript 4] Gate Dielectrics Fabricated by Rapid Thermal Process	p. 83
Interfacial Properties of Si-Si[subscript 3]N[subscript 4] Formed by Remote Plasma Enhanced Chemical Vapor Deposition	p. 89
Aggresivley Scaled P-Channel MOSFETs With Stacked Nitride-Oxide-Nitride, N/O/N, Gate Dielectrics	p. 101
N[subscript 2]O Oxidation Kinetics of Ultrathin Thermally Grown Silicon Nitride: An Angle Resolved X-ray Photoelectron Spectroscopy Study	p. 107
Low-Temperature Formation of Ultrathin SiO[subscript 2] Layers Using Direct Oxidation Method in a Catalytic Chemical Vapor Deposition System	p. 115
Development of High Purity One ATM Ozone Source - Its Application to Ultrathin SiO[subscript 2] Film Formation on St Substrate	p. 121
Modeling the Dependence of the Gate Current on Ge Content in Ultrathin Gate Dielectric PMOS Devices With Poly-Si[subscript 1-x]Ge[subscript x] Gate Material	p. 127
Nitridation by NO or N[subscript 2]O of Si-SiO[subscript 2] Interfaces	p. 135
Capturing Properties of Two-Fold Coordinated Nitrogen Atom in Silicon Oxynitride	p. 141
Single Water CVD of Silicon Nitride for CMOS Gate Applications	p. 147
Ultrathin High-Quality Silicon Nitride Gate Dielectrics Prepared by Catalytic Chemical Vapor Deposition at Low Temperatures	p. 155
Surface Morphology of Ultrathin Oxide Formed on Si(100)	p. 163
Atomically Smooth Ultrathin Oxide Layers on Si(113)	p. 169
Long-Range Order in Ultrathin SiO[subscript 2] Grown on Ordered Si(100)	p. 181
Layer-By-Layer Oxidation of Silicon Surfaces	p. 189
Bonding Constraints at Interfaces Between Crystalline Si and Stacked Gate Dielectrics	p. 201
Nitrogen Profile Engineering for Tunnel Oxynitrides	p. 207
Atomic Scale Modeling of the Silicon (100) Thermal Oxidation - A Kinetic Monte Carlo Approach	p. 213
Fowler-Nordheim Tunneling Current Oscillation Study of Interface Roughness	p. 221
Self-Consistent MOSFET Tunneling Simulations - Trends in the Gate and Substrate Currents and the Drain-Current Turnaround Effect With Oxide Scaling	p. 227
The Effects of Interfacial Suboxide Transition Regions On Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics	p. 241
Electrical Characterization of a Double Barrier Direct Tunneling Diode Structure	p. 247
Two-Band Tunneling Currents and Stress-Induced Leakage in Ultrathin SiO[subscript 2] Films	p. 253
Measuring Interface State Distributions in Ultrathin MOS Capacitors With Direct Tunnel Current Leakage	p. 259
Enhanced Reliability of Thin Silicon Dioxide Grown on Nitrogen-Implanted Silicon	p. 265
Passivation of (111) Si/SiO[subscript 2] Interfacial Defects by Molecular Hydrogen	p. 271
Effects of Inversion Layer Quantization and Polysilicon Gate Depletion on Tunneling Current of Ultrathin SiO[subscript 2] Gate Material	p. 275
Enhanced Degradation in P[superscript +]-Poly PMOSFETs With Oxynitride Gate Dielectrics Under Hot-Hole Injection	p. 283
Relationship Between Interfacial Roughness and Dielectric Reliability for Silicon Oxynitride Gate Dielectrics Processed With Nitric Oxide	p. 289
Triggering and Suppression of Soft Breakdown During Mercury-Probe Assessment of Thin Gate Oxide Quality	p. 295
Soft Breakdown in Ultrathin Oxides	p. 301
Modeling Soft Breakdown of Ultrathin Gate Oxide Layers	p. 307
Breakdown Characteristics of Ultrathin Gate Oxides Caused by Plasma Charging	p. 313
Process and Manufacturing Challenges for High-K Gate Stack Systems	p. 323
Remote Plasma-Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO[subscript 2])[subscript x]-(SiO[subscript 2])[subscript 1-x] (x [actual symbol not reproducible] 0.5), Thin Films for Advanced High-K Gate Dielectrics	p. 343
A Tale of Two Precursors: UHV-CVD of TiO[subscript 2] From Titanium Nitrate and Titanium Isopropoxide	p. 349
Deposition and Treatment of TiO[subscript 2] as an Alternative for Ultrathin Gate Dielectrics	p. 355
Ultrathin Tantalum Pent-Oxide Films for ULSI Gate Dielectrics	p. 361
Fabrication of Ta[subscript 2]O[subscript 5] Thin Films by Anodic Oxidation of Tantalum Nitride and Tantalum Silicide: Growing Mechanisms, Electrical Characterization and ULSI M-I-M Capacitor Performances	p. 371
Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation	p. 379
Ultrathin High-Quality Ta[subscript 2]O[subscript 5] Gate Dielectrics Prepared by In Situ Rapid Thermal Processing	p. 385
Effect of Thermal Stability and Roughness on Electrical Properties of Tantalum Oxide Gates	p. 391
Photo-Induced CVD of Tantalum Pentoxide Dielectric Films Using an Injection Liquid Source	p. 397
Characterization of the Seed SiO[subscript 2] Layer in Stacked SiO[subscript 2]-Ta[subscript 2]O[subscript 5] Gate Dielectrics	p. 403
Alternate Gate Oxides for Silicon MOSFETs Using High-K Dielectrics	p. 409
Crystalline Oxides on Silicon - Alternative Dielectrics for Advanced Transistor Technologies	p. 415
Properties of Epitaxial SrTiO[subscript 3] Thin Films Grown on Silicon by Molecular Beam Epitaxy	p. 427
Bulk and Surface Electronic Properties of Oxide Dielectrics	p. 435
Effect of Al, Ta, and O Precursors on Growth and Properties of Al[subscript 2]O[subscript 3] and Ta[subscript 2]O[subscript 5] Thin Films Deposited by Triode PECVD	p. 445
Electrical Characterization of Al[subscript 2]O[subscript 3]-SiO[subscript 2] MOS Structures	p. 451
Self-Control Phenomenon for Crystallinity and Morphology Observed at Epitaxial Growth of BaTiO[subscript 3] by Alternating Deposition Method	p. 459
Role of Silver Doping in the Improvement of Electrical Properties of (Ba,Sr)TiO[subscript 3] Thin Films	p. 463
Atomic Layer Deposition of Ta[subscript 2]O[subscript 5] Films Using Ta(OC[subscript 2]H[subscript 5])[subscript 5] and NH[subscript 3]	p. 469
Study of Thermal Stability of CVD Ta[subscript 2]O[subscript 5]/Si Interface	p. 473
Ultrathin TiO[subscript 2] Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient	p. 481
Thermal and Chemical Instability Between Iridium Gate Electrode and Ta[subscript 2]O[subscript 5] Gate Dielectrics	p. 489
Vacuum Ultraviolet Annealing of Tantalum Oxide Films Deposited at Room Temperature by Photo-Induced CVD	p. 495
Two Step O[subscript 2]/N[subscript 2]O Plasma Annealing for the Reduction of Leakage Current in Amorphous Ta[subscript 2]O[subscript 5] Films	p. 501
Characterization of Process Variables for Ultraviolet Assisted Injection Liquid Source Chemical Vapor Deposition (UVILS-CVD) of Tantalum Pentoxide Films	p. 509
Comparison of Valence-Band Tunneling in Pure SiO[subscript 2], Composite SiO[subscript 2]/Ta[subscript 2]O[subscript 5], and Pure Ta[subscript 2]O[subscript 5], in MOSFETs With 1.0 nm-Thick SiO[subscript 2]-Equivalent Gate Dielectrics	p. 515
Nitrogen (N[subscript 2]) Implantation to Suppress Growth of Interfacial Oxide in MOCVD BST and Sputtered BST Films	p. 521
Large-Area Pulsed Laser Deposition of Tantalum Oxide Films	p. 527
Sub-Nonmetric Resolution Depth Profiling of Ultrathin ONO Structures	p. 537
H[actual symbol not reproducible]Si[actual symbol not reproducible]O[actual symbol not reproducible] Clusters on Si(100)-2x1 and Gold: A Comparative Infrared Spectroscopic Study	p. 543
Ultrathin Silicon Oxide and Nitride - Silicon Interface States	p. 549
Spectroscopic Ellipsometry of To[subscript 2]O[subscript 3] on Si	p. 559
Scanning Probe Microscopy (SPM) for the Investigation of Local Electrical Properties of High-K Dielectric/Ferroelectric Films	p. 567
Process Definition for Obtaining Ultrathin Silicon Oxides Using Full-Water Electrical and Optical Measurements	p. 573
Structure and Bonding in Nitrided Oxide Films by SIMS and XPS	p. 579
The Influence of Fluorine on Various MOS Devices	p. 589
Gate-Prior-to-Isolation CMOS Technology With Through-the-Gate-Implanted Ultrathin Gate Oxides	p. 597
High-K Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials	p. 603
Author Index	p. 609
Subject Index	p. 613
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