Wide Band Gap Semiconductor Nanowires 1 Low-Dimensionality Effects and Growth

by Consonni , Vincent; Feuillet, Guy; Baptist, Robert

• ISBN13: 9781848215979
• ISBN10: 1848215975
• Edition: 1st
• Format: Hardcover
• Copyright: 2014-09-22
• Publisher: Wiley-ISTE

Summary

GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms
of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

Author Biography

Vincent Consonni is Associate Scientist at CNRS (French National Center for Research) in France. His research has focused on the physics of crystal growth and of condensed matter for micro- and nano-structures involving compound semiconductors such as CdTe, GaN, ZnO and SnO2. He is currently working on transparent conductive materials and ZnO nanowire-based solar cells. He has published approximately 30 articles in peer-reviewed journals.

Guy Feuillet is Senior Scientist at CEA (French Atomic and Alternative Energy Commission), France. He has initiated and coordinated many internal programs (GaN nanostructures, X-ray detectors for medical imaging, solid state lighting) and R&D programs during his work at CEA. He is a permanent member of the scientific advisory board at CEA/LETI, and a member of the selection committee for the French National Agency for Research (ANR). He has published about 120 papers in peer-reviewed journals.

Table of Contents

Section 1: GaN and ZnO nanowires for optical devices: assets and limitations

1.1. GaN and ZnO materials: similarities-differences

1.2. Single nanowires: low dimensionality related effects

1.2.1. Quantum confinement

1.2.2. Stress relaxation

1.2.3. Optical and surface effects

1.2.4. Doping and transport (electrical)

1.3. Nanowire ensemble for optical devices

1.3.1. Single vs ensemble (inhomogeneities)

1.3.2. Optical extraction and absorption

1.3.3. Integration processes and first demonstrators

1.3.3.1. GaN nanowire-based devices

1.3.3.2. ZnO nanowire-based devices

Section 2: Nucleation and growth mechanisms of GaN and ZnO nanowires 

2.1. Molecular beam epitaxy for GaN nanowires

2.1.1. Catalyst-assisted / Self-catalyzed

2.1.2. Self-induced

2.1.3. Selective area growth

2.2. Metal organic vapour phase epitaxy for GaN nanowires

2.2.1. Catalyst-assisted / Self-catalyzed

2.2.2. Self-induced

2.2.3. Selective area growth

2.3. Metal organic vapour phase epitaxy for ZnO nanowires

2.3.1. Catalyst-assisted / Self-catalyzed

2.3.2. Self-induced

2.3.3. Selective area growth

2.4. Physical vapour deposition and wet chemistry for ZnO nanowires

2.4.1. Physical vapor deposition

2.4.2. Wet chemistry

Section 3: Heterostructures made from GaN and ZnO nanowires 

3.1. InGaN and AlGaN nanowire heterostructures: QWs and alloys

3.1.1. AlGaN nanowire heterostructures

3.1.2. InGaN nanowire heterostructures

3.2. ZnMgO and ZnCdO, type II nanowire heterostructures

3.2.1. ZnMgO and ZnCdO nanowire heterostructures 

3.2.2. Type II heterostructures

3.3. Heterojunction: ZnO/GaN and others