Wide Bandgap Semiconductors

by Takahashi, Kiyoshi; Yoshikawa, Akihiko; Sandhu, Adarsh

• ISBN13: 9783540472346
• ISBN10: 3540472347
• Format: Hardcover
• Copyright: 2007-04-03
• Publisher: Springer Verlag

Summary

This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices. After reviue of the basic physics of WBGS and the relevance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the effect of defects on device performance are highlighted and solutions proposed based on recent studies.

Table of Contents

Preface	p. VII
Lifetime of Research on Nitrides - Alone in the Wilderness	p. IX
Development and Applications of Wide Bandgap Semiconductors	p. 1
Optical Devices	p. 1
Wide Bandgap Semiconductors Indispensable for Short Wavelength Optical Devices	p. 1
Control of the Physical Properties of III-V Nitrides and II-VI Semiconductors	p. 6
Other Characteristics and Trends of Wide Bandgap Semiconductor Optical Devices	p. 10
Electronic Devices	p. 11
Silicon Carbide Electronic Devices	p. 11
Nitride Compound Semiconductor Electron Devices	p. 16
References	p. 23
Fundamental Properties of Wide Bandgap Semiconductors	p. 25
Crystals and Band Structure	p. 25
IV-IV Group Semiconductors	p. 25
II-VI Semiconductors	p. 31
III-V Nitride Semiconductors	p. 36
Heterostructures and Band Structure	p. 41
Lattice Defects	p. 47
Optical, Mechanical, and Thermal Properties of Wide Bandgap Semiconductors	p. 52
Optical Properties	p. 52
Quantum Structure of Wide Bandgap Semiconductors	p. 63
Lattice Constants of Semiconductors	p. 67
Mechanical and Thermal Properties of Semiconductors	p. 70
Electrical Properties of Wide Bandgap Semiconductors	p. 77
Doping Technology	p. 77
Mobility of Electrons and Holes	p. 78
Electrical Properties of SiC	p. 80
Electrical Properties of GaN	p. 82
References	p. 86
Photonic Devices	p. 97
Physical Properties	p. 97
Fundamental Properties of Optical Devices	p. 97
Optical Gain and Laser Action	p. 105
Visible LEDs	p. 111
Visible AlGaInP LEDs	p. 111
Visible GaN LEDs	p. 114
BeZnSeTe-Based Green LEDs	p. 120
Ultraviolet Devices	p. 124
Issues Related to the Development of High Efficiency and Short Wavelength Ultraviolet LEDs	p. 124
ZnO LEDs	p. 131
Diamond Light Emitting Devices	p. 140
AlN LEDs	p. 146
Ultra Violet Photodetectors	p. 152
White Light Emitting Devices	p. 158
White LEDs for Illumination	p. 158
Development Trends of Phosphors	p. 160
Improvements of the Color Rendering of GaN-Based White LEDs	p. 167
High Efficiency and High-Power LEDs	p. 170
ZnSe-Based White LEDs	p. 175
Applications and Prospects of White Light Emitting LEDs	p. 180
Laser Diodes (LDs)	p. 186
Blue/Violet Laser Diodes for Next Generation DVD Applications	p. 186
Long Wavelength GaN-Based Laser Diodes	p. 198
Advances in UV Laser Diodes	p. 206
ZnSe Laser Diodes	p. 207
References	p. 218
Electronic Devices	p. 231
High Frequency Power Devices	p. 231
Nitride Semiconductor High Frequency Power Devices	p. 231
SiC	p. 239
Diamond	p. 243
High Breakdown Voltage, High Current Density Power Devices	p. 249
GaN	p. 249
SiC	p. 255
New Functional Devices	p. 263
Electron Emitters	p. 263
Transparent Devices	p. 271
References	p. 276
Novel Nano-Heterostructure Materials and Related Devices	p. 281
Nanostructure Devices and Materials	p. 281
Single Photon Devices	p. 281
GaN Nanocolumn Light Emitting Devices	p. 287
Wide Bandgap Semiconductor Nanostructures and Devices	p. 296
Novel AlGaN/GaN Heterostructure Devices	p. 298
GaN-Based High Temperature Operating Hall Devices	p. 298
GaN-Based Intersubband Transition Optical Switches	p. 303
Nitride Photocatalysis	p. 311
References	p. 321
Crystal Growth	p. 329
Bulk Crystal Growth	p. 329
SiC	p. 329
Diamond	p. 335
GaN	p. 342
BN	p. 348
ZnSe	p. 352
Crystal Growth of Bulk ZnO Single Crystal	p. 356
Epitaxial Growth	p. 362
Epitaxial Growth of SiC	p. 362
GaN/Si Epitaxy	p. 370
Diamond	p. 379
Epitaxial Growth of GaN	p. 383
InGaN and InGaN/GaN Heterostructures	p. 393
AlGaN, AlN, and AlGaN/GaN Heterostructures	p. 400
InN and Related Semiconductors	p. 407
Lattice-Matched Quaternary BAlGaN Alloys	p. 415
Epitaxial Growth of ZnSe and Related Semiconductors	p. 417
ZnO and Related Semiconductors	p. 427
References	p. 433
Index	p. 447
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