Wide-Bandgap Electronic Devices

by Shul, R. J.; Ren, Fan; Pletschen, Wilfried; Murakami, Masanori

• ISBN13: 9781558995307
• ISBN10: 1558995307
• Format: Hardcover
• Copyright: 2001-05-01
• Publisher: Materials Research Society

Summary

Interest in wide-bandgap semiconductors for high-power/high-temperature electronics remains prominent. For such applications, SiC is by far the most mature semiconductor material. GaN and diamond, however, have also become prime candidates. While diamond has several advantages over the other two materials, producing large single crystals, as well as the inability to achieve n-type doping, have limited device fabrication. For GaN, recent advances in crystal growth and processing capabilities, as well as excellent transport properties, have yielded a great deal of device development, yet thermal conduction remains an issue. SiC has excellent thermal conductivity, high-breakdown voltages, and well-developed substrates and processing techniques. This book deals with a wide range of technical activity in the area of wide-bandgap high-power/high-temperature electronic devices and covers topics including the fabrication and performance of GaN-based and SiC-based devices, as well as issues related to growth, characterization, and processing of wide-bandgap materials. Several summaries of the current status of the field are provided.

Table of Contents

Preface	xv
Materials Research Symposium Proceedings	xvi
SiC DEVICES
*SiC And GaN High-Voltage Power Devices	1	(1)
T. Paul Chow
*Investigations Of Non-Micropipe X-Ray Imaged Crystal Defects In SiC Devices	2	(1)
Philip G. Neudeck
Maria A. Kuczmarski
Michael Dudley
William M. Vetter
Haibin B. Su
Luann J. Keys
Andrew J. Trunek
PD/AIN/Si Or SiC Structure for Hydrogen Sensing Device	3	(2)
Flaminia Serina
C. Huang
G. W. Auner
R. Naik
S. Ng
L. Rimai
*Comprehensive Study Of The Electrothermal Operation Of SiC Power Devices Using A Fully Coupled Physical Transport Model	5	(2)
Martin Lades
Winfried Kaindl
Gerhard Wachutka
Implanted Bipolar Technology In 4H-SiC	7	(1)
Nick G. Wright
C. M. Johnson
Anthony G. O'Neill
Alton Horsfall
Sylvie Ortolland
Kazuhiro Adachi
Andrew P. Knights
Paul G. Coleman
Isothermal I-V Characteristics Of 4H-SiC p-n Diodes With Low Series Differential Resistivity At Avalanche Breakdown	8
Konstantin V. Vassilevski
Konstantinos Zekentes
Alexander V. Zorenko
Leonid P. Romanov
III-NITRIDE DEVICES-ELECTRONIC
*Insulator/GaN Heterostructures Of Low Interfacial Density Of States	2	(2)
Minghwei Hong
Hock M. Ng
J. Kwo
A. Refik Kortan
Jim N. Baillargeon
K. Alex Anselm
Joe P. Mannaerts
Alfred Y. Cho
C. M. Lee
Jen Inn Chyi
T. Sheng Lay
F. Ren
C. R. Abernathy
Stephen J. Pearton
*AlGaN-Based Microwave Transmit and Receive Modules	4	(1)
John C. Zolper
Polarization Induced 2DEG In MBE-Grown AlGaN/GaN HFETs: On The Origin, DC And RF Characterization	5	(1)
Ramakrishna Vetury
I. P. Smorchkova
Christopher R. Elsass
Benjamin Heying
Stacia Keller
Umesh K. Mishra
Potential Of GaN Gunn Devices For High Power Generation Above 200 GHz	6	(1)
Ridha Kamoua
Yiming Zhu
Yunji Corcoran
Temperature Dependence and Current Transport Mechanisms In AlxGa1-xN Schottky Rectifiers	7	(2)
A. P. Zhang
X. A. Cao
G. Dang
F. Ren
J. Han
J.-I. Chyi
C.-M. Lee
C.-C. Chuo
T.E. Nee
Fabrication Of Enhancement-Mode GaN-Based Metal-Insulator-Semiconductor Field Effect Transistor	9
P. Chen
R. Zhang
Y. G. Zhou
S. Y. Xie
Z. Y. Luo
Z. Z. Chen
W. P. Li
S.L. Gu
Y. D. Zheng
III-NITRIDE DEVICES: ELECTRONIC AND PHOTONIC
GaN pnp Bipolar Junction Transistors Operated To 250°C	2	(1)
A. P. Zhang
G. Dang
F. Ren
J. Han
C. Monier
A. G. Baca
X. A. Cao
H. Cho
C. R. Abernathy
S. J. Pearton
Current Gain Simulation Of Npn AlGaN/GaN Heterojunction Bipolar Transistors	3	(3)
C. Monier
S. J. Pearton
Albert G. Baca
P. C. Chang
L. Zhang
J. Han
R.J. Shul
F. Ren
J. LaRoche
*Design And Performance Of Nitride-Based Ultraviolet LEDs	6	(1)
M. H. Crawford
J. Han
R. J. Shul
M. A. Banas
J. J. Figiel
L. Zhang
*Present Status Of III-Nitride Based Photodetectors	7	(1)
Eva Monroy
Fernando Calle
Jose Luis Pau
Elias Munoz
Franck Omnes
Bernard Beaumont
Pierre Gibart
A Comparative Study Of AlGaN- And GaN-Based Lasing Structures For Near- And Deep-UV Applications	8
Sergiy Bidnyk
Jack B. Lam
Gordon G. Gainer
Brian D. Little
Yong-Hwang Kwon
Jin-Joo Song
Gary E. Bulman
Hua-Shuang Kong
GROWTH AND CHARACTERIZATION OF WIDE-BANDGAP MATERIALS
Low Temperature Lateral Epitaxial Growth Of Silicon Carbide On Silicon	1	(1)
Chacko Jacob
Juyong Chung
Moon-Hi Hong
Pirouz Pirouz
Shigehiro Nishino
SiC Epitaxial Growth On Porous SiC Substrates	2	(1)
Galyna Melnychuck
Marina Mynbaeva
Svetlana Rendakova
Vladimir Dmitriev
Stephen E. Saddow
DLTS Study Of 3C-SiC Grown On Si Using Hexamethyldisilane	3	(1)
Masashi Kato
Masaya Ichimura
Eisuke Arai
Yasuichi Masuda
Yi Chen
Shigehiro Nishino
Yutaka Tokuda
Non-Contact Characterization Of Recombination Processes In 4H-SiC	4	(1)
Kevin Matocha
T.P. Chow
R.J. Gutmann
*GaN Based Quantum Dot Heterostructures	5	(1)
Michael A. Reshchikov
Jie Cui
Feng Yun
Alison Baski
Marshall I. Nathan
Hadis Morkoc
Lateral Polarity Heterostructures By Overgrowth Of Patterned AlxGa1-xN Nucleation Layers	6	(2)
Roman Dimitrov
V. Tilak
M. Murphy
W. J. Schaff
L. F. Eastman
A. P. Lima
C. Miskys
O. Ambacher
M. Stutzmann
Single Crystal Growth Of Gallium Nitride Substrates Using A High-Pressure High-Temperature Process	8	(1)
Rajiv K. Singh
Donald R. Gilbert
Francis Kelly
Robert Chodelka
Reza Abbaschian
Stephen J. Pearton
Alexander Novikov
Nikolay Patrin
John Budai
Lateral And Vertical Growth Study In The Initial Stages Of GaN Growth On Sapphire With ZnO Buffer Layers By Hydride Vapor Phase Epitaxy	9	(1)
Shulin Gu
Rong Zhang
Ling Zhang
T. F. Kuech
Improved Heteroepitaxial MBE GaN Growth With A Ga Metal Buffer Layer	10
Yihwan Kim
Sudhir G. Subramanya
Joachim Krueger
Henrik Siegle
Noad Shapiro
Robert Armitage
Henning Feick
Eicke R. Weber
Christian Kisielowski
Yi Yang
Franco Cerrina
GROWTH AND CHARACTERIZATION OF III-NITRIDES
*Measurement Of Transit Time And Carrier Velocity Under High Electric Field In III-Nitride P-I-N Diodes	1	(1)
Michael Wraback
H. Shen
J. C. Carrano
T. Li
J. C. Campbell
Cathodoluminescence Of Lateral Epitaxial Overgrowth GaN: Dependencies On Excitation Conditions	2	(2)
G. S. Cargill III
Eva Campo
Lanping Yue
J. Ramer
M. Schurman
I. T. Ferguson
Photoconductivity Recombination Kinetics In GaN Films	4	(2)
Mira Misra
Theodore D. Moustakas
Effect Of Interface Manipulation For MBE Growth Of AIN On 6H-SiC	6	(1)
Koichi Naniwae
Jeff Hartman
Chris Petrich
Robert F. Davis
Robert J. Nemanich
Characterization Of Thin GaN Layers Deposited By Hydride Vapor Phase Epitaxy (HVPE) On 6H-SiC Substrates	7	(1)
John T. Wolan
Yaroslav Koshka
S. E. Saddow
Yu V. Melnik
V. Dmitriev
Real Time Observation And Characterization Of Dislocation Motion, Nitrogen Desorption And Nanopipe Formation In GaN	8	(2)
Eric A. Stach
Christian F. Kisielowski
William S. Wong
Timothy Sands
Nathan W. Cheung
2DEGs And 2DHGs Induced By Spontaneous And Piezoelectric Polarization In AlGaN/GaN Heterostructures	10	(1)
Oliver Ambacher
Angela Link
Stefan Hackenbuchner
M. Stutzmann
Roman Dimitrov
Michael Murphy
Joe Smart
Jim R. Shealy
Bruce Green
William J. Schaff
Les F. Eastman
High Room-Temperature Hole Concentrations Above 1019 cm-3 In Mg-Doped InGaN/GaN Superlattices	11
Kazuhide Kumakura
Toshiki Makimoto
Naoki Kobayashi
WIDE-BANDGAP DEVICES, MATERIALS, AND PROCESSING
Pendeo Epitaxy Of 3C-SiC On Si Substrates	3	(1)
Geoffrey E. Carter
Tsvetanka Zheleva
Galyna Melnychuck
Bruce Geil
Kenneth Jones
Stephen E. Saddow
The Temperature Dependent Breakdown Voltage For 4H- and 6H-SiC Diodes	4	(1)
You-Sang Lee
M. K. Han
Y. I. Choi
A Study Of Pt/AIN/6H-SiC MIS Structures For Device Applications	5	(1)
Margarita P. Thompson
Gregory W. Auner
Changhe Huang
James N. Hilfiker
Improved Sensitivity SiC Hydrogen Sensor	6	(1)
Claudiu Iulian Muntele
Daryush Ila
Eric K. Williams
Iulia Cristina Muntele
A. Leslie Evelyn
David B. Poker
Dale K. Hensley
Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide	7	(2)
J. Senzaki
K. Fukuda
Y. Ishida
Y. Tanaka
H. Tanoue
N. Kobayashi
T. Tanaka
K. Arai
The Formation And Characterization Of Epitaxial Titanium Carbide Contacts To 4H-SiC	9	(2)
Sang-Kwon Lee
Erik Danielsson
Carl-Mikael Zetterling
Mikael Ostling
Jens-Petter Palmquist
Hans Hogberg
Ulf Jansson
Arsenic Incorporation In Gallium Nitride Grown By Metalorganic Chemical Vapor Deposition Using Dimethylhydrazine And Tertiarybutylarsenic	11	(2)
Steffen Kellermann
Kim-Man Yu
Eugene E. Haller
Edith D. Bourret-Courchesne
P-GaAs Base Regrowth For GaN HBTs And BJTs	13	(1)
Gerard Dang
A. P. Zhang
X. A. Cao
F. Ren
S. J. Pearton
H. Cho
W. S. Hobson
J. Lopata
J. M. Van Hove
J. J. Klassen
C. J. Polley
A. M. Wowchack
P. P. Chow
D. J. King
TEM Study Of High Quality GaN Grown By OMVPE Using An Intermediate Layer	14	(1)
Mourad Benamara
Z. Liliental-Weber
S. Kellermann
W. Swider
J. Washburn
J. H. Mazur
E. D. Bourret-Courchesne
Transient Photoresponse From Co Schottky Barriers On AlGaN	15	(1)
Reinhard Schwarz
Manfred Niehus
L. Melo
Pedro Brogueira
Svetoslav Koynov
Manfred Heuken
Dirk Meister
Bruno Karl Meyer
Comparison Of Different Substrate Pre-Treatments On The Quality Of GaN Film Growth On 6H-, 4H-, And 3C-SiC	16	(2)
Ki Hoon Lee
Moon-Hi Hong
Kasif Teker
Chacko Jacob
Pirouz Pirouz
Dislocations Produced By Indentation Deformation Of HPVE GaN Films	18	(2)
Moon-Hi Hong
Pirouz Pirouz
P. M. Tavernier
David R. Clarke
Formation And Characterization Of Oxides On GaN Surfaces	20	(2)
David Mistele
Thomas Rotter
Fritz Fedler
Harald Klausing
Olga K. Semchinova
Jens Stemmer
Jochen Aderhold
Jurgen Graul
Achievements And Characterizations Of GaN With Ga-Polarity In Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy	22	(1)
Xu-Qiang Shen
T. Ide
S. H. Cho
M. Shimizu
S. Hara
H. Okumura
Nature Of Low-Frequency Excess Noise In n-Type Gallium Nitride	23	(1)
Changfei F. Zhu
W. K. Fong
B. H. Leung
C. C. Cheng
C. Surya
Monte Carlo Based Calculation Of Transport Parameters For Wide-Bandgap Device Simulation	24	(1)
Enrico Bellotti
Maziar Farahmand
Hans-Erik Nilsson
Kevin F. Brennan
P. Paul Ruden
Design Of AlGaN/GaN Heterojunction Bipolar Transistor Structures	25	(1)
Yumin Zhang
Cheng Cai
P. Paul Ruden
Thermal Modeling Of III-Nitride Heterostructure Field Effect Transistors	26	(2)
T. Li
P. Paul Ruden
J. D. Albrecht
M. G. Ancona
R. Anholt
Long Time-Constant Trap Effects In Nitride Heterostructure Field Effect Transistors	28	(1)
Xiaozhong Dang
Peter M. Asbeck
Edward T. Yu
Karim S. Boutros
Joan M. Redwing
Short Gate Length AlGaN/GaN HEMTs	29	(1)
Oliver Breitschadel
L. Kley
H. Grabeldinger
B. Kuhn
F. Scholz
H. Schweizer
Plasma-Induced Damage And Passivation Of GaN In Electron Cyclotron Resonance Excited N2 Plasma Source	30	(1)
Jyh-Tsung Hsieh
O. Breitschadel
M. Rittner
L. W. Fu
H. Schweizer
Ohmic Contact Formation Mechanism Of Pd-Based Contact To p-GaN	31	(2)
Dae-Woo Kim
Joon Cheol Bae
Woo Jin Kim
Hong Koo Baik
Chong Cook Kim
Jung Ho Je
Chang Hee Hong
Channeling Defects In Group-III Nitrides During Dry Etching Processes	33	(1)
Oliver Breitschadel
J. T. Hsieh
B. Kuhn
F. Scholz
H. Schweizer
Microstructure And Thermal Stability Of Transition Metal Nitrides And Borides On GaN	34	(1)
Jacek Bogdan Jasinski
E. Kiminski
Anna Piotrowska
Adam Barcz
Marcin Zielinski
Lattice Parameters And Thermal Expansion Of Important Semiconductors And Their Substrates	35	(1)
Robert R. Reeber
Kai Wang
Reactive Ion Etching Of CVD Diamond In CF4/O2, O2 and O2/ Ar Plasmas	36
Patrick W. Leech
Geoffrey K. Reeves
Anthony S. Holland
PROCESSING OF III-NITRIDE MATERIALS
*Device Processing For GaN High Power Electronics	1	(3)
Stephen J. Pearton
X. A. Cao
H. Cho
K. P. Lee
C. Monier
F. Ren
G. Dang
A. P. Zhang
W. Johnson
J. R. LaRoche
B. P. Gila
C. R. Abernathy
R. J. Shul
A. G. Baca
J. Han
J.-I. Chyi
J. M. Van Hove
Electric And Morphology Studies Of Ohmic Contacts On AlGaN/GaN	4	(1)
Vinayak Tilak
R. Dimitrov
M. Murphy
B. Green
J. Smart
W. J. Schaff
J. R. Shealy
L. F. Eastman
Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs	5	(4)
Randy J. Shul
L. Zhang
A. G. Baca
Christi G. Willison
J. Han
S. J. Pearton
K. P. Lee
F. Ren
Surface Disordering And Nitrogen Loss In GaN Under Ion Bombardment	9
S. O. Kucheyev
J. S. Williams
C. Jagadish
J. Zou
M. Toth
M. R. Phillips
H. H. Tan
G. Li
S. J. Pearton
SiC PROCESSING
*The Materials Properties Of A Nickel Based Composite Contact To n-SiC For Pulsed Power Switching	2	(1)
Melanie W. Cole
P. C. Joshi
F. Ren
C. W. Hubbard
M. C. Wood
M. H. Ervin
Stable Ti/TaSi2/Pt Ohmic Contacts On n-Type 6H-SiC Epilayer At 600°C in Air	3	(1)
Robert S. Okojie
David Spry
Jeffery Krotine
Carl Salupo
Donald R. Wheeler
High-Dose Titanium Ion Implantation Into Epitaxial Si/3C-SiC/Si Layer Systems For Electrical Contact Formation	4	(2)
Jorg K. N. Lindner
Stephanie Wenzel
Bernd Stritzker
Characterization Of n-Type Layer By S+ Ion Implantation In 4H-SiC	6	(1)
Yasunori Tanaka
Naoto Kobayashi
Hajime Okumura
Sadafumi Yoshida
Masataka Hasegawa
Masahiko Ogura
Hisao Tanoue
The Effects Of Post-Oxidation Anneal Conditions On Interface State Density Near The Conduction Band Edge and Inversion Channel Mobility For SiC MOSFETs	7	(1)
Gilyong Chung
Chin-Che Tin
John Robert Williams
Kyle McDonald
M. DiVentra
S. T. Pantelides
Len C. Feldman
Robert A. Weller
Effects Of Electrode Spacing On Reactive Ion Etching Of 4H-SiC	8	(1)
Janna R. Bonds
Geoff E. Carter
Jeffrey B. Casady
James D. Scofield
Deep RIE Process For Silicon Carbide Power Electronics And MEMS	9	(1)
Glenn Beheim
Carl S. Salupo
Silicon Carbide Die Attach Scheme For 500°C Operation	10
Liang-Yu Chen
Gary W. Hunter
Philip G. Neudeck
Author Index
Subject Index