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9780471975366

Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide

by ; ; ;
  • ISBN13:

    9780471975366

  • ISBN10:

    0471975362

  • Edition: 1st
  • Format: Hardcover
  • Copyright: 2000-05-18
  • Publisher: WILEY
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Summary

Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide Edited by R. A. B. Devine, University of New Mexico, USA J.-P. Duraud, ESRF, Grenoble, France and E. Dooryh?e, ESRF, Grenoble, France Silicon dioxide is one of the most common naturally occurring materials. Its applications range from nuclear waste storage to optical fibre communications to silicon microelectronics. Experts from America, Europe and Japan have written chapters covering both the amorphous and the crystalline phases of the material with particular reference to its structure and defects. The book is divided into four sections: Topological Models for the Crystalline and Amorphous Phases Electronic Structure Macroscopic and Point Defects Processing and Applications of Crystalline and Amorphous Phases Engineers, researchers and postgraduate students of materials science, physics and engineering will all find this an extremely useful addition to their libraries.

Author Biography

R. A. B. Devine and J.-P. Duraud are the authors of Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide, published by Wiley.

Table of Contents

Contributors xvii
Preface xxi
Part I TOPOLOGICAL MODELS FOR THE CRYSTALLINE AND AMORPHOUS PHASES
(a) Description of the Atomic Arrangement in SiO2 Polymorphs
The Topology of Silica Networks
3(46)
L. W. Hobbs
C. E. Jesurum
B. Berger
Introduction
3(3)
Graph Properties of Networks
6(10)
Primary and Secondary Graph Properties
6(1)
Tessellations
7(2)
Rings
9(5)
Local Clusters
14(2)
Network Constraint and Structural Freedom
16(4)
Structural Stability and Rigidity Constraints
16(1)
Structural Freedom and Amorphizability
17(3)
Local-Rules Basis for Structural Assembly
20(22)
Assembling Crystalline Polymorphs
21(1)
Quartz
22(3)
Cristobalite and Tridymite
25(2)
Moganite
27(1)
Keatite
28(1)
Coesite
29(1)
Generating Amorphous Networks
29(2)
Local Rules Self-Assembly
31(2)
Reassembly of Disordered Collision Cascades
33(3)
Refinement of Topological Models
36(1)
Local Cluster Analysis
37(1)
Crystalline Polymorphs
37(2)
Topologically Disordered Silicas
39(3)
Topology of Silica Surfaces
42(1)
Conclusions
43(1)
Acknowledgements
44(1)
References
44(5)
Low-Pressure Crystalline Phases of SiO2
49(20)
G. Dolino
Introduction
49(1)
Quartz
50(8)
Crystalline Properties at Room Temperature
50(1)
Occurrence
50(1)
Atomic Structure
50(1)
Chemical Composition
51(1)
Electromechanical Properties
51(1)
Optical Properties
51(1)
Dislocations
52(1)
Twins
52(1)
α--β Transition and High-Temperature Properties
52(1)
Order Parameter
52(2)
Temperature Variation of Physical Properties in η2
54(1)
Thermal Properties
55(1)
Incommensurate Phase
55(1)
Soft Mode and Lattice Vibrations of Quartz
56(2)
Other Low-Pressure Polymorphs
58(7)
Cristobalite
58(1)
Structure and Properties of the α Phase
59(1)
α--β Transition and High-Temperature Properties
59(1)
Disorder in the β Phase
60(1)
Tridymite
61(1)
Phase Relations
61(3)
Temperature Variation in Physical Properties
64(1)
Conclusion
65(1)
References
65(4)
Theoretical Investigations of the Structure of Amorphous SiO2 at Elevated Pressure
69(38)
L. Stixrude
Introduction
69(3)
Theoretical Methods
72(11)
Statistical Mechanical Simulations
72(2)
Electronic Structure Methods
74(1)
Semi-Empirical Potentials
75(8)
Structure and Compression Mechanisms of Tectosilicates
83(4)
Compression of SiO2 Glass
87(13)
Overview
87(1)
Elastic Regime
88(4)
Anelastic Regime
92(2)
Permanent Densification
94(2)
Coordination Changes
96(4)
Conclusions and Future Directions
100(1)
Acknowledgment
101(1)
References
101(6)
(b) Experimental Analysis of SiO2 Atomic Networks
Nuclear Magnetic Resonance as a Structural Probe of SiO2
107(14)
R. Dupree
Introduction
107(1)
29Si Chemical Shifts in SiO2 Polymorphs
108(6)
Shift Structure Correlations for Tetrahedrally Coordinated Polymorphs
109(2)
Some Examples of the Use of 29Si NMR for Giving Structural Information about Crystalline SiO2 Phases
111(1)
Tridymite Orthorhombic Phase
111(2)
Oxygen Positions in High-Temperature SiO2 Phases
113(1)
29Si as Probe of Amorphous SiO2 Structure
114(1)
17O NMR in SiO2
115(4)
Quadrupolar Effects
115(1)
17O NMR in Crystalline Systems
116(1)
Quartz
116(1)
Cristobalite
117(1)
Coesite
118(1)
Stishovite
118(1)
17O NMR in Glassy SiO2
118(1)
Acknowledgment
119(1)
References
119(2)
Neutron and X-Ray Scattering Studies of Vitreous Silica
121(32)
A. C. Wright
R. N. Sinclair
Introduction
121(3)
Traditional Theories of Glass Structure
122(1)
Ranges of Order
123(1)
Neutron and X-Ray Scattering Techniques
124(1)
Modern Diffraction Data
125(2)
X-Ray Diffraction
125(1)
Neutron Diffraction
126(1)
Methods of Interpretation
127(2)
General Data Characteristics
127(2)
Accuracy and Comparison with Models
129(1)
The SiO4 Tetrahedral Structural Unit (Range I)
129(3)
The Si--O--Si and Bond Torsion Angles (Range II)
132(2)
Network Topology and Structural Theories/Models (Range III)
134(8)
Crystal-Based Models
135(2)
Random Network Models
137(2)
Computer Simulation
139(2)
First Diffraction Peak
141(1)
Long-Range Density Fluctuations (Range IV)
142(1)
Fast Neutron Irradiated Vitreous Silica
143(1)
Inelastic Neutron Scattering Studies
144(3)
Conclusions
147(1)
References
148(5)
Part II ELECTRONIC STRUCTURE OF THE SI-O2 BOND AND THE EXTENDED NETWORK
(a) Calculations and Modelling of the Electronic Structure
Molecules as a Basis for Modeling the Force Field of Silica
153(14)
G. V. Gibbs
F. C. Hill
M. B. Boisen, Jr.
R. T. Downs
Introduction
153(1)
Connection Between the Force Field of Silica and Small Molecules
153(5)
Structural Evidence
153(2)
Evidence Provided by Electron Density Distributions
155(2)
Evidence Provided by Molecular Modeling of the Structure of Silica
157(1)
Generation of Silica Structure Types Using a Molecular-Based Potential
158(4)
Discussion
162(1)
References
163(4)
First Principles Calculation of the Electronic Structures of Crystalline and Amorphous Forms of SiO2
167(14)
W. Y. Ching
Introduction
167(1)
Method and Approach
168(2)
Results on Crystalline Phases
170(3)
Results on Amorphous Phases
173(4)
Conclusions
177(1)
Acknowledgements
178(1)
References
178(3)
The Electronic Structure of Silica Using Ab Initio Pseudopotentials
181(20)
J. R. Chelikowsky
N. Binggeli
Introduction
181(2)
Pseudopotentials
183(4)
Crystalline Forms of Silica
187(1)
Structural Energies of Crystalline Silica
188(1)
Electronic Structure of α-Quartz
189(3)
Electronic Structure of α-Quartz at High Pressure
192(4)
Conclusions
196(1)
Acknowledgements
196(1)
References
196(5)
(b) Experimental Analysis of the Electronic Structure
X-Ray Absorption Near Edge Structures of SiO2
201(26)
F. Jollet
Introduction
201(1)
Principle of XANES
202(5)
Presentation of XANES
202(2)
Dependence on the Electronic Structure
204(1)
Interpretation
205(2)
The Si K, Si L2.3 and O K XANES Signatures and their Relation to the Electronic Structure in SiO2
207(11)
Crystalline SiO2
207(1)
α-Quartz
207(5)
Polarization Effects in α-Quartz
212(1)
Other Crystalline Phases
213(2)
Amorphous SiO2
215(3)
Other Silicon Oxides
218(1)
Knowledge of Empty States: Examples
218(4)
SiO2 Under Pressure
218(3)
Radiation Damage Produced by High Energy Ions
221(1)
Conclusion
222(1)
Acknowledgements
223(1)
References
223(4)
Electron Energy Loss Structures of SiO2
227(26)
M. Gautier-Soyer
Introduction
227(1)
Physical Basis of REELS
228(6)
Dielectric Approach to REELS
228(1)
Deriving the Electron Energy Loss Function from the REELS Spectra
229(1)
Removing Multiple Losses
230(1)
Validity of the Dipole Approximation (k ∼ 0)
231(1)
Influence of Surface Effects
232(1)
Obtaining the Complex Dielectric Function from the Single Scattering Inelastic Cross-Section: the Model of Yubero and Tougaard
232(1)
Interpretation of the ELF in Terms of Electronic Structure---Comparison with Optical Data
233(1)
Application to SiO2: Optical Properties Derived from Optical Measurements, TEELS, REELS and Electronic Structure Calculation
234(2)
The REELS Spectrum of SiO2
236(11)
Band Gap
238(1)
Origin of the Structures above the Band Gap in the REELS Spectrum of SiO2
239(2)
Origin of the 5.1 and 7.2 eV Structures Observed in the Band Gap Region
241(2)
Comparison with Previous Optical Absorption Measurements
243(1)
Comparison with Calculated Electronic Transitions
244(1)
Origin of the 5.1 and 7.2 Structures Observed in the REELS Spectrum
245(2)
Conclusion
247(1)
Acknowledgments
247(1)
References
247(6)
Part III MACROSCOPIC AND POINT DEFECTS
Theory of Electronic and Structural Properties of Point Defects in SiO2
253(40)
A. H. Edwards
W. B. Fowler
J. Robertson
Introduction
253(1)
Theory
254(4)
General Methodological Requirements
254(1)
Equilibrium Geometries and Potential Energy Surfaces
254(1)
Optical Properties
254(1)
Hyperfine Parameters
255(1)
Electrical Level Positions
256(1)
Specific Methods
256(1)
Termination Issues
256(1)
Ab Initio Methods
257(1)
Intrinsic Defects
258(12)
E' Centers
258(1)
E' Centers in α-Quartz
259(2)
E' Centers in Silica Glass
261(1)
Similarities and Differences
262(1)
Superoxide Radical and the Non-Bridging Oxygen in a-SiO2
263(1)
Theoretical Hyperfine Results
263(2)
Transformation Mechanisms
265(1)
Metastable Structure of Transient Defects
266(1)
Self-Trapped Hole
266(2)
Self-Trapped Exciton (STE)
268(1)
Other Oxygen Deficiency Centers
268(1)
Twofold Silicon
269(1)
Oxygen Divacancy
269(1)
Valence-Alternation Pairs
269(1)
Extrinsic Defects
270(2)
Phosphorus Defect
270(1)
Germanium Defect
270(1)
Aluminum Defact
271(1)
Nitrogen Defect
271(1)
Current Problems
272(15)
E' Center in Silica
272(1)
Lelis Experiments and the E' Center as a Switching Trap
272(7)
Interaction of Hydrogen with Defects in a SiO2
279(5)
Optical Properties of Silica Glass
284(1)
2 and 4.8 eV Absorption and 1.9 eV Luminescence
285(1)
5.85 eV Absorption
285(1)
3.8 and 8 eV Absorption
285(1)
5 and 7.6 eV Absorption and 4.4 and 2.7 eV Emission
285(2)
Acknowledgements
287(1)
References
287(6)
Radiation-Induced Defects and Electronic Modification
293(36)
P. Paillet
J. L. Leray
H. J. von Bardeleben
Introduction
293(1)
Characterization of Radiation-Induced Defects by Electrical and Optical Techniques
294(11)
Origin of Hole and Electron Traps in Oxide Layers
294(3)
Electrical Characterization of Defects
297(1)
Post-Irradiation Evolution of the Net Trapped Charge
297(2)
Thermally Stimulated Current
299(2)
Thermally Stimulated Luminescence
301(4)
ERP Characterization of Radiation-Induced Point Defects in Crystalline and Amorphous SiO2
305(19)
Defects in Crystalline α-SiO2
307(1)
Intrinsic Defects
307(3)
Impurity Related Defects
310(1)
Defects in Bulk Silica
310(1)
Intrinsic Defects
311(7)
Defects in Thermal Silica
318(3)
Defects at Si/SiO2 Interfaces: Pb, Pb0 and Pb1 Centres
321(3)
Conclusions
324(1)
Acknowledgements
325(1)
References
325(4)
Transient Defects and Electronic Excitation
329(20)
N. Itoh
A. M. Stoneham
K. Tanimura
Introduction
329(2)
Electrons, Holes and Excitons in Fused Silica and α-Quartz
331(3)
Mobility of Electrons
331(1)
Mobilities of Holes
332(1)
Dynamics of Excitons and Exciton Formation
332(2)
Self-Trapping of Excitons and Holes in Fused Silica and α-Quartz
334(3)
Theory of the Self-Trapped Exciton
335(1)
Is the Hole Self-Trapped?
336(1)
Transient Atomic Defects
337(4)
Transient Defects at Surfaces and Interfaces
341(2)
Pb Centres at a Moving Silicon/Oxide Interface
342(1)
Defects Associated with Telegraph Noise
342(1)
Transient Defects in Silica-Based Glasses
343(1)
Charge Transfer: Colours of Silicas
343(1)
Gratings Produced in Ge-Doped Optical Fibres
343(1)
References
344(5)
Radiation-Induced Defects and Structural Modifications
349(76)
E. Dooryhee
J.-P. Duraud
R. A. B. Devine
Basic Irradiation Processes and Formation Yields of Point Defects
349(33)
Introduction
349(3)
Basic Irradiation Concepts
352(1)
Macroscopic Description of the Beam-Solid Interaction
352(3)
Elastic Nuclear Scattering
355(5)
Inelastic Scattering
360(1)
Experimental Observations of the Damage
361(2)
Defect Creation by Elastic Collisions
363(1)
Primary Knock-ons and Collisional Cascades
363(3)
Irradiation of SiO2 by Fast Neutrons (E < 100 KeV)
366(1)
Ion Implantation in SiO2
367(4)
Defect Creation by Inelastic Processes
371(1)
High-Energy Ion Irradiation of SiO2
372(1)
Electron Irradiation of SiO2
373(2)
Photon Irradiation of SiO2
375(1)
High-Energy Photolysis
375(4)
Sub-Band Gap Photolysis
379(1)
Post-Irradiation Annealing of Point Defects
379(3)
Effect of Dense Electronic Excitations
382(11)
Introduction
382(1)
Track Formation in SiO2
383(1)
Microscopic and Macroscopic Studies of Tracks in SiO2
384(4)
Mechanisms for Latent Track Formation
388(2)
Defect Generation in SiO2 by Laser Irradiation
390(1)
Remarks on Energy Absorption and Relaxation by SiO2
390(1)
Defect Formation under Subpicosecond UV Laser Pulses
391(2)
Radiation-Induced Structural Modification
393(10)
Structural Modification of α-Quartz
393(1)
Amorphization under Irradiation
393(3)
Structural Analysis of Particle-Amorphized α-Quartz
396(2)
Structural Evolution
398(2)
Point Defect Model for the Metamictization of Quartz
400(3)
Conclusion
403(1)
Structural Modifications of Amorphous SiO2
403(13)
The Structural Nature of Amorphous SiO2
403(2)
Infrared Spectroscopy and the Si--O--Si Bridging Bond Angle
405(2)
Interpretation of Radiation-Induced Changes
407(3)
Dose Dependence of Radiation-Induced Modifications
410(2)
Nature of the Radiation-Induced Densification
412(3)
Densification Maximization and Radiation-Induced Viscous Flow
415(1)
References
416(9)
Part IV PROCESSING AND APPLICATIONS OF CRYSTALLINE AND AMORPHOUS PHASES
Quartz Oscillators
425(24)
J. R. Vig
Introduction
425(1)
Applications
426(1)
Oscillator Basics
426(5)
Quartz Resonators
427(3)
Equivalent Circuit of Crystal Unit
430(1)
Oscillator Circuits
431(1)
Factors Affecting Frequency Stability
431(10)
Temperature
432(2)
Aging and Drift
434(1)
Short-Term Stability
435(1)
Thermal Hysteresis and Retrace
436(1)
Drive Level
436(1)
Acceleration, Vibration, and Shock
436(1)
Magnetic Field Effects
437(1)
Radiation Effects
437(2)
Other Effects on Stability
439(1)
Interactions Among the Influences on Stability
440(1)
Filters
441(1)
Sensors
441(1)
Oscillator Comparison
442(2)
Future of Quartz Oscillator Technology
444(1)
References
444(5)
Science and Technology of Silica Lightguides for Telecommunications
449(26)
C. R. Kurkjian
D. M. Krol
Introduction
449(2)
History
451(2)
First Low-Loss Lightguide Fiber, 1970
453(1)
Composition
454(3)
Optical Behaviour
457(4)
Optical Loss
457(4)
Lightguide Design
461(1)
Solitions
462(1)
Processing
463(1)
Vapour Deposition Processes
463(1)
MCVD
463(1)
Fiber Drawing
464(1)
Defects
465(1)
Mechanical Properties
465(1)
New Devices
466(5)
Erbium-Doped Fiber Amplifiers
466(2)
Fiber Bragg Gratings
468(1)
Photoinduced Second Harmonic (χ(2)) Gratings in Fibers
468(2)
Electric Field Poling of Glass
470(1)
Feedback of Lightguide Results to Glass Science
471(1)
References
471(4)
Microstructure, Surface Chemistry, and Properties of Silica Gels
475(20)
C. J. Brinker
W. L. Warren
S. Wallace
Sol--Gel Processing
475(2)
High Surface Area Silica Gels
477(2)
Unique Properties of High Surface Area, Bulk Sol-Gel Silica as Compared with Amorphous Silica
479(1)
Three-Membered Rings in Sol-Gel Glasses
480(2)
Consequences of Three-Membered Rings
482(4)
Enhanced Surface Reactivity
482(2)
Enhanced Defect Creation
484(1)
Membranes
485(1)
Sol--Gel Thin Films
486(5)
Introduction
486(1)
Sol--Gel Film Deposition
486(2)
Control of Microstructure
488(1)
Dense Insulating Films on Si
489(1)
Porous Sol--Gel Films
490(1)
Summary
491(1)
Bulk Gels
491(1)
Thin Films
491(1)
Acknowledgments
491(1)
References
491(4)
Index 495

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