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9780471446538

Silicon Germanium Technology, Modeling, and Design

by ; ;
  • ISBN13:

    9780471446538

  • ISBN10:

    047144653X

  • Edition: 1st
  • Format: Hardcover
  • Copyright: 2003-11-07
  • Publisher: Wiley-IEEE Press
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Summary

"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: Detail many of IBM's SiGe technology development programs Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling Discuss IBM's design automation and signal integrity knowledge and implementation methodologies Illustrate design applications in a variety of IBM's SiGe technologies Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM

Author Biography

RAMINDERPAL SINGH, PhD, is a Senior Engineer at IBM&#146;s RF/AMS Design Kit Group where he leads various projects related to transmission line model development, substrate modeling, and RF/mixed-signal design methodologies. Dr. Singh has authored numerous technical publications in the area of signal integrity, and is Director of VSIA, as well as a Senior Member of IEEE. <BR>

Table of Contents

Contributors ix
Foreword xiii
Preface xvii
Acknowledgments xxi
Acronyms xxiii
Introduction 1(20)
A Historical Perspective at IBM 21(26)
1 Technology Development 47(56)
Overview
47(1)
1.1 Active Devices
48(10)
1.2 Technology Development: Advanced Passives and ESD Protection
58(19)
1.3 Process Development
77(7)
1.4 Technology Implications in SiGe Design
84(19)
2 Modeling and Characterization 103(60)
Overview
103(1)
2.1 Predictive Modeling
104(12)
2.2 Characterization
116(11)
2.3 Compact-Model Development: Active Devices
127(21)
2.4 Compact-Model Development: Advanced Passives
148(15)
3 Design Automation and Signal Integrity 163(70)
Overview
163(1)
3.1 Design Automation Overview
164(16)
3.2 ESD: Best-Practice CAD Implementation
180(14)
3.3 Interconnect Extraction and Modeling
194(23)
3.4 Substrate Noise Isolation and Modeling
217(16)
4 Leading-Edge Applications 233(86)
Overview
233(1)
4.1 Wired Communications: SONET Design
234(37)
4.2 Wireless Design: A Direct Conversion Receiver IC for WCDMA Mobile Systems
271(25)
4.3 Wireless Design: Ericsson Power-Amplifier Design
296(8)
4.4 Memory Design: A 32-Word by 32-Bit Three-Port Bipolar Register File
304(15)
Appendix. Summary of IBM Foundry Offerings 319(16)
Index 335(3)
About the Authors 338

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