The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.

Eiji Takeda: Hitachi Ltd., Tokyo, Japan Cary Y. Yang: Santa Clara University, California Akemi Miura-Hamada: Hitachi Ltd., Tokyo, Japan

Preface	p. xi
MOS Device Fundamentals
From Discrete to ULSI	p. 1
Physics of the MOS Diode	p. 2
The Ideal MOS Diode	p. 3
Energy Band Diagrams	p. 3
Solution with the Depletion Approximation	p. 5
Capacitance-Voltage Characteristics	p. 8
General Solution	p. 11
Nonideal Considerations	p. 15
Voltage-Independent Flat-Band Shifts	p. 15
Interface Trapped Charge	p. 17
Nonuniform Substrate Doping	p. 22
Principles of the MOSFET	p. 23
Qualitative Description of MOSFET Operation	p. 23
Bulk Charge Model	p. 26
The Square Law	p. 28
Threshold Voltage	p. 29
Transconductance	p. 30
Threshold Voltage Determination	p. 31
Subthreshold Conduction	p. 32
Short-Channel Effects	p. 34
Mobility Degradation	p. 35
Carrier Velocity Saturation	p. 37
Survey of Device and Circuit Reliability Issues Related to Hot-Carrier Effects	p. 40
Summary	p. 42
Hot-Carrier Injection Mechanisms
Introduction	p. 43
Avalanche Breakdown	p. 44
Avalanche Multiplication	p. 45
Normal Breakdown	p. 47
Negative-Resistance Breakdown	p. 48
Hot-Carrier Injection Mechanisms and Gate Currents	p. 49
Channel Hot-Electron (CHE) Injection	p. 49
Drain Avalanche Hot-Carrier (DAHC) Injection	p. 51
Secondarily Generated Hot-Electron (SGHE) Injection	p. 51
Substrate Hot-Electron (SHE) Injection	p. 57
Fowler-Nordheim (F-N) Tunnel Injection	p. 57
Direct Tunnel Injection	p. 58
Gate Current Modeling	p. 58
Gate Current Resulting from CHE Injection (Effective Electron Temperature Model)	p. 58
Gate Current Resulting from DAHC Injection	p. 60
Effective Electron Temperature vs Lucky-Electron Model	p. 65
Summary	p. 65
Hot-Carrier Device Degradation
Introduction	p. 66
Device Degradation Due to Various Hot-Carrier Injections	p. 67
Interface Trap Density (N[subscript it]) vs Degraded Length ([delta]L)	p. 68
[Delta]G[subscript m]/G[subscript m0] vs [Delta]N[subscript it]/N[subscript it] Relation	p. 70
Role of Hot Holes	p. 73
DAHC vs CHE Injections	p. 76
SGHE vs DAHC Injections	p. 78
Modeling of Device Degradation	p. 80
Substrate Current Modeling	p. 80
Device Degradation Modeling--Hot-Carrier Lifetime	p. 81
The Si-SiO[subscript 2] Interface Degradation	p. 88
Summary	p. 90
AC and Process-Induced Hot-Carrier Effects
Introduction	p. 91
Dynamic (AC) Stress Effects	p. 91
Gate Pulse-Induced Noises	p. 92
AC Hot-Carrier Degradation Due to Noises	p. 92
AC Hot-Carrier Effects without Noises	p. 97
Device Structure Dependence of AC Hot-Carrier Effects	p. 98
Initial Stage Degradation	p. 103
Process Effects on Hot-Carrier Degradation	p. 106
Gate Oxide Degradation Due to Electron-Beam Direct Writing	p. 108
Isolation Effects on Hot-Carrier Degradation	p. 110
Materials Effects on Hot-Carrier Degradation	p. 110
Mechanical Stress Effect	p. 113
High-Quality Gate Dielectrics	p. 120
Summary	p. 121
Hot-Carrier Effects at Low Temperature and Low Voltage
Introduction	p. 122
Hot-Carrier Effects at Low Temperature	p. 123
Device Performance Degradation	p. 123
G[subscript m] Degradation	p. 123
V[subscript th] Shift	p. 127
Device Degradation Mechanisms	p. 130
Summary	p. 133
Dependence of Hot-Carrier Phenomena on Device Structure
Introduction	p. 134
Variations of Device Structure	p. 135
Device Parameter Dependence	p. 135
Effective Channel Length	p. 135
Channel Dose	p. 135
Gate Oxide Thickness	p. 137
Gate to Drain-Source Overlapped Length	p. 138
Device Structure Dependence	p. 140
Drain Structures	p. 140
Hot-Carrier-Resistant Characteristics (I[subscript SUB], I[subscript G])	p. 142
Summary	p. 145
As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices
Introduction	p. 147
DDD Structure and Its Fabrication Process	p. 149
DDD Device Characteristics	p. 150
I[subscript D]-V[subscript D] Characteristics	p. 150
Drain Sustaining Voltage (BV[subscript DS])	p. 153
Short-Channel Effects--V[subscript th] Lowering	p. 153
Tail Coefficient and V[subscript th] Scattering	p. 154
Hot-Carrier Breakdown Voltage or Highest Applicable Voltage (BV[subscript DC])	p. 157
DDD and LDD Device Operation Principles	p. 159
LDD Device Characteristics	p. 161
Device Characteristics Specific to LDD Devices	p. 161
Reduced Switchback Action Due to Source n[superscript -] Resistance	p. 162
Improved LDD Devices	p. 165
Gaussian vs Abrupt Junctions	p. 166
V[subscript th] Lowering	p. 166
G[subscript m] vs x[subscript j] Relation	p. 168
Summary	p. 172
Gate-to-Drain Overlapped Devices (GOLD)
Introduction	p. 175
GOLD Structure and Its Fabrication Process	p. 176
Device Characteristics	p. 177
G[subscript m] Improvement	p. 177
Suppressed Avalanche-Induced Breakdown	p. 178
Table of Contents provided by Syndetics. All Rights Reserved.

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Hot-Carrier Effects in MOS Devices

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