9780792334057

Wide Band Gap Electronic Materials covers topics including electronic doping of diamond, n-type diamond, negative electron affinity of diamond, applications of aluminum nitride, the doping of boron nitride, wide band gap electronic applications, and nanophase diamond. One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices. Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants. Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride.

Preface
Problems of n-type Diamond Doping, Forced Methods of Doping	p. 1
Diffusion of Boron, Hydrogen, Oxygen and Lithium in Single Crystalline and Polycrystalline Diamond. A Novel Method for the Determination of the State of an Impurity: Forced Diffusion of Boron in IA Type Natural Diamond	p. 15
Chemical Aspects of Diamond Doping	p. 31
Diamond Growth by Hot Carbon Filament Chemical Vapor Deposition	p. 47
Diamond Particles on Silicon Tips: Preparation, Structure, and Field-Emission Properties	p. 53
To the Question of the Diamond Nuclei's Formation from the Gas Phase	p. 63
Electrically and Optically Active Impurities and Defects in Diamond	p. 69
Prediction of Diamond Film Thermal Conductivity	p. 81
Spectral Hole-Burning Study of the Defects Created by Neutron Irradiation in a Natural Diamond	p. 89
Calculations of Phosphorous Electronic Levels in Diamond	p. 97
Hydrogen Chemistry on Diamond Surface	p. 105
Surface and Bulk Conductivity of Hydrogen Treated Polycrystalline Diamond	p. 115
Positron Annihilation in Diamond Films	p. 123
ESR Study of Paramagnetic Defects in Free Standing Diamond Films	p. 129
Efficient Reduction of Nitride and Nitrate to Ammonia Using B-doped Diamond Electrodes	p. 137
Electronic and Sensing Properties of Diamond	p. 143
Diamond MIS Capacitors With Silicon Dioxide Dielectric	p. 161
Diamond Photovoltaics: Characterization of CVD Diamond Film-Based Heterostructure for Light to Electricity Conversion	p. 171
Laser Modes in Diamond	p. 187
Advanced Applications of Diamond Electronics	p. 207
Laser-assisted Chemical Etching of Diamond Films in Oxygen	p. 219
Ion Milling of Polycrystalline Diamond Films	p. 225
Doping of Diamond-Like Carbon Films	p. 235
Unhydrogenated DLC Films Obtained by Magnetron Sputtering	p. 243
Simulation of Diffusion in an Amorphous Structure	p. 249
Optical and Electrical Properties of Quantum-dimentional Multilayer Structures Based on Carbon Films	p. 257
Thermal Stability and Structural Reactions at the Tantalum/a-C Interface Under Vacuum Annealing Conditions	p. 265
Extended and Localized Electronic States in Tetrahedral Carbon Films	p. 271
Optical Properties of Sputtering and Glow Discharge a-C:H Films	p. 285
Application of Amorphous Hydrogenated Carbon Coating to Semiconductor Radiation Detectors	p. 291
Device for Growing and Doping in the Growth Process of Thin AlN Films	p. 297
Peculiarities of Chemical Vapor Heteroepitaxy of Wide Band Gap III-V Nitrides	p. 305
The Peculiarities of Cubic Boron Nitride Formation Mechanism Using Hexa-Ammonicate Boron Hydride of Magnesium	p. 313
Investigation of Cubic Boron Nitride Crystallization Processes in the BN-Li[subscript 3]N-(H, N) System	p. 321
Epitaxial Growth of AlN by Plasma Source Molecular Beam Epitaxy	p. 329
Electronic Structure and Related Properties of Tetrahedrally Bonded Wide-Band-Gap Materials Containing Early Elements of the Periodic Table	p. 335
Ion Implantation into Wide Bandgap Semiconductors	p. 373
Thermodynamic Properties of Boron Nitride	p. 377
Electrical Conductivity of Ceramic Based on Different Boron Nitride Modifications	p. 393
Cathodoluminescent Investigation of External Factors Influence on Defective Cubic Boron Nitride Structure	p. 397
Macro and Micro Structural Factors in Thin Film Growth of III-V Compounds	p. 401
The Features of the Sintering Process Under High Pressure of Aluminum Nitride Ceramic with High Thermal Conductivity	p. 421
Reactive Ion Etching of Silicon Carbide with Fluorine Containing Plasmas	p. 427
1.54-[mu]m Photoluminescence from Er-Implanted AlN and GaN	p. 431
AES-SIMS Analitical System for Compositional Measurements of Wide Band Gap Semiconductors	p. 437
Positron Annihilation in Sintered Boron Nitride	p. 447
Wide Band Gap Electronic Devices	p. 453
Wide Band-gap Photovoltaics	p. 463
Considerations in Further Development of Aluminum Nitrides as a Material for Device Applications	p. 475
Theoretical Aspects of Aluminum Nitride and Diamond in View of Laser and Photovoltaic Action	p. 487
Oral Presentations	p. 511
Poster Presentations	p. 513
List of Participants	p. 519
Affiliations Key	p. 525
Author Index	p. 527
Key Word Index	p. 529
Table of Contents provided by Blackwell. All Rights Reserved.

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Wide Band Gap Electronic Materials

0792334051

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