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9781621009405

Fabrication and Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications

by ; ;
  • ISBN13:

    9781621009405

  • ISBN10:

    1621009408

  • Format: Paperback
  • Copyright: 2012-06-30
  • Publisher: Nova Science Pub Inc
  • Purchase Benefits
List Price: $47.00

Summary

Recently, there has been increased interest in long wavelength infrared (LWIR) materials because of their applications in civilian and military imaging. Among many on-going research materials, dilute nitride indium antimonide (InSbN) has attracted great attention because of the unique characteristics of dilute nitride III-V compounds, which could complement the ubiquitous mercury cadmium telluride (HgCdTe) material in terms of performance and manufacturing. This book presents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore.

Table of Contents

Preface
Introduction of InSb & InSbN materials
Introduction of solid source molecular beam epitaxy & common post-growth characterization techniques
Solid-source MBE growth of InSb & its characterization
Characterization of carbon-doped InSb diode grown by solid-source MBE
Nitrogen compositions & point defects in InSbN grown using radio frequency plasma assisted MBE
Heteroepitaxy & properties of InSbN on GaAs substrate
Effects of thermal annealing in InSbN & preliminary stage of InSbN photodetectors
Concluding remarks of research on InSb & InSbN materials
Bibliography
Index
Table of Contents provided by Publisher. All Rights Reserved.

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